TH97/10561QM BYD77AA - BYD77GA SMA (DO-214AC) Glass passivated junction chip High maximum operating temperature Low leakage current Excellent stability Smallest surface mount rectifier outline Pb / RoHS Free 1.1 ± 0.3 4.5 ± 0.15 5.0 ± 0.15 FEATURES : 0.2 ± 0.07 1.2 ± 0.2 2.1 ± 0.2 2.6 ± 0.15 MECHANICAL DATA : * * * * * * IATF 0060636 SGS TH07/1033 ULTRA FAST LOW-LOSS CONTROLLED AVALANCHE RECTIFIERS PRV : 50 - 400 Volts Io : 2.0 Amperes * * * * * * TW00/17276EM 2.0 ± 0.2 Case : SMA Molded plastic Epoxy : UL94V-O rate flame retardant Lead : Lead Formed for Surface Mount Polarity : Color band denotes cathode end Mounting position : Any Weight : 0.067 gram Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified RATING SYMBOL Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Min. Reverse Avalanche Breakdown Voltage @ I R = 0.1 mA Maximum Average Forward Current BYD BYD BYD BYD BYD BYD BYD UNIT 77AA 77BA 77CA 77DA 77EA 77FA 77GA VRRM 50 100 150 200 250 300 400 V VR 50 100 150 200 250 300 400 V V(BR)R-min 55 110 165 220 275 330 440 V IF(AV) 2.0 (1) 1.85 (2) 0.80 (2) 0.85 (1) A Maximum Non-Repetitive Peak Forward Surge Current (Note 3) IFSM Maximum Repetitive Peak Forward Current at Ttp = 105 °C IFRM 15 13 A VF 0.98 1.05 V Maximum Forward Voltage at IF = 1.0 A ; TJ = 25 °C Maximum Reverse Current at VR =VRRMmax 25 A TJ = 25 °C IR 1.0 μA TJ = 165 °C IR(H) 100 μA Maximum Reverse Recovery Time (Note 4) Thermal Resistance from Junction to Tie-Point Trr 25 50 ns Rth j-tp 30 K/W K/W Rth j-a 150 Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Thermal Resistance from Junction to Ambient (Note 5) Notes : (1) Ttp = 105 °C; see Fig. 1and 2; averaged over any 20 ms period; see also Fig.5 and 6 (2) Tamb = 60 °C; PCB mounting ; see Fig. 3 and 4; averaged over any 20 ms period; see also Fig.5 and 6 (3) t=10ms half sine wave; Tj = Tjmax prior to surge; V R = VRRMmax (4) Reverse Recovery Test Conditions : IF = 0.5 A, I R = 1.0 A, Irr = 0.25 A. (5) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≤ 40 μm. Page 1 of 3 Rev. 00 : February 13, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( BYD77AA - BYD77GA ) FIG.1 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE 4 AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A) 4 AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A) FIG.2 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF TIE-POINT TEMPERATURE BYD77AA to DA 3 2 1 0 0 100 200 BYD77EA to GA 3 2 1 0 0 TIE-POINT TEMPERATURE, Ttp ( °C) FIG.3 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE 1.2 BYD77AA to DA AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A) AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A) 200 FIG.4 - MAXIMUM PERMISSIBLE AVERAGE FORWARD CURRENT AS A FUNCTION OF AMBIENT TEMPERATURE 1.2 1.0 0.8 0.6 0.4 0.2 0 BYD77EA to GA 1.0 0.8 0.6 0.4 0.2 0 0 100 200 0 AMBIENT TEMPERATURE, Tamp ( °C) 100 200 AMBIENT TEMPERATURE, Tamp ( °C) FIG.5 - MAXIMUM STEADY STATE POWER DISSIPATION AS A FUNCTION OF AVERAGE FORWARD CURRENT 2 FIG.6 - MAXIMUM STEADY STATE POWER DISSIPATION AS A FUNCTION OF AVERAGE FORWARD CURRENT 2 a =3 2.5 2 1.57 1.42 POWER DISSIPATION, P D (W) POWER DISSIPATION, P D (W) 100 TIE-POINT TEMPERATURE, Ttp ( °C) 1 BYD77AA to DA a = IF(RMS)/IF(AV) ; VR = VRRMmax ; δ = 0.5 0 0 1 AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A) Page 2 of 3 2 a =3 2.5 2 1.57 1.42 1 BYD77EA to GA a = IF(RMS)/IF(AV) ; VR = VRRMmax ; δ = 0.5 0 0 1 2 AVERAGE FORWARD OUTPUT CURRENT, IF(AV) (A) Rev. 00 : February 13, 2008 TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( BYD77AA- BYD77GA ) FIG.7 - FORWARD CURRENT AS FUNCTION FIG.8 - FORWARD CURRENT AS FUNCTION OF FORWARD VOLTAGE OF FORWARD VOLTAGE 10 10 8 FORWARD CURRENT, I F (A) FORWARD CURRENT, I F (A) BYD77AA to DA TJ = 25 °C 6 4 2 BYD77EA to GA TJ = 25 °C 8 6 4 2 0 0 0 1 2 0 1 2 3 FORWARD VOLTAGE, V F (V) FORWARD VOLTAGE, V F (V) FIG.9 - REVERSE CURRENT AS FUNCTION OF JUNCTION TEMPERATURE REVERSE CURRENT, IR (μA) 1000 100 VR =VRRMmax 10 1 0 100 200 JUNCTION TEMPERATURE, TJ ( °C) Page 3 of 3 Rev. 00 : February 13, 2008