Vishay BYG10 Silicon mesa smd rectifier Datasheet

BYG10
Vishay Telefunken
Silicon Mesa SMD Rectifier
Features
D
D
D
D
D
Controlled avalanche characteristics
Glass passivated junction
Low reverse current
High surge current capability
Wave and reflow solderable
15 811
Applications
Surface mounting
General purpose rectifier
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Test Conditions
tp=10ms,
half sinewave
Type
BYG10D
BYG10G
BYG10J
BYG10K
BYG10M
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
Value
200
400
600
800
1000
30
Unit
V
V
V
V
V
A
IFAV
Tj=Tstg
1.5
–55...+150
A
°C
ER
20
mJ
I(BR)R=1A, Tj=25°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction lead
TL=const.
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu
Document Number 86008
Rev. 3, 24-Jun-98
Symbol
RthJL
RthJA
RthJA
RthJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
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BYG10
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Test Conditions
IF=1A
IF=1.5A
VR=VRRM
VR=VRRM, Tj=100°C
IF=0.5A, IR=1A, iR=0.25A
Reverse current
Reverse recovery time
Type
Symbol
VF
VF
IR
IR
trr
Min
Typ
Max
1.1
1.15
1
10
4
Unit
V
V
mA
mA
ms
Characteristics (Tj = 25_C unless otherwise specified)
100
IF – Forward Current ( A )
I R – Reverse Current ( mA )
100
10
1
0.1
10
Tj = 125°C
1
Tj = 75°C
0.1
VR = VR RM
0.01
Tj = 25°C
0.01
0
40
80
120
160
200
Tj – Junction Temperature ( °C )
94 9180
0
0.6
Figure 1. Typ. Reverse Current vs. Junction Temperature
1.2
1.8
2.4
3.0
VF – Forward Voltage ( V )
94 9284
Figure 3. Typ. Forward Current vs. Forward Voltage
I FAV– Average Forward Current ( A )
5000
t rr – Reverse Recovery Time ( ns )
2.0
1.6
1.2
RthJA=25K/W
100K/W
125K/W
0.8
0.4
Tamb= 125°C
4000
3000
Tamb = 75°C
94 9179
80
Tamb = 25°C
1000
IR=0.5A, iR=0.125A
150K/W
40
Tamb= 50°C
2000
0
0
0
Tamb= 100°C
120
160
200
Tamb – Ambient Temperature ( °C )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
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0
94 9544
0.2
0.4
0.6
0.8
1.0
IF – Forward Current ( A )
Figure 4. Typ. Reverse Recovery Time vs.
Forward Current
Document Number 86008
Rev. 3, 24-Jun-98
BYG10
Vishay Telefunken
Qrr – Reverse Recovery Charge ( nC )
2000
Tamb= 125°C
Tamb= 100°C
1600
Tamb= 75°C
1200
Tamb= 50°C
Tamb= 25°C
800
400
IR=0.5A, iR=0.125A
0
0
0.2
0.4
0.6
0.8
1.0
IF – Forward Current ( A )
94 9338
Z thp – Thermal Resistance for Pulse Cond. (K/W)
Figure 5. Typ. Reverse Recovery Charge vs.
Forward Current
1000
125K/W DC
100
tp/T=0.5
tp/T=0.2
10
tp/T=0.1
tp/T=0.05
tp/T=0.02
Single Pulse
tp/T=0.01
1
10–5
94 9339
10–4
10–3
10–2
10–1
100
101
102
tp – Pulse Length ( s )
Figure 6. Thermal Response
Document Number 86008
Rev. 3, 24-Jun-98
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BYG10
Vishay Telefunken
Dimensions in mm
14275
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Document Number 86008
Rev. 3, 24-Jun-98
BYG10
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 86008
Rev. 3, 24-Jun-98
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