Vishay BYT12P800A Fast recovery silicon power rectifier Datasheet

BYT12P/1000A
Vishay Telefunken
Fast Recovery Silicon Power Rectifier
Features
D
D
D
D
D
D
D
D
Multiple diffusion
Low switch on power losses
Good soft recovery behaviour
Fast forward recovery time
Fast reverse recovery time
Low reverse current
Very low turn on transient peak voltage
14282
Very good reverse current stability at high temperature
D Low thermal resistance
Applications
Fast switched mode power supplies
Freewheeling diodes and snubber diodes in motor
control circuits
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Test Conditions
tp=10ms,
half sinewave
Repetitive peak forward current
Average forward current
Junction and storage
temperature range
Type
Symbol
VR=VRRM
Value
1000
Unit
V
IFSM
150
A
IFRM
IFAV
Tj=Tstg
25
12
–40...+150
A
A
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction case
Junction ambient
Document Number 86021
Rev. 2, 24-Jun-98
Test Conditions
Symbol
RthJC
RthJA
Value
2.0
85
Unit
K/W
K/W
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
BYT12P/1000A
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Test Conditions
IF=12A
IF=12A, Tj=100°C
VR=VRRM
VR=VRRM, Tj=100°C
IF=12A,, diF/dt 50A/ms
Reverse current
Type
x
Forward recovery time
Turn on transient peak
voltage
Reverse recovery
y
characteristics
x
I =12A, di /dtx–50A/ms,
IF=12A,, diF/dt –50A/ms,,
VBatt=200V, Tj=100°C
Reverse recovery time
F
Symbol
VF
VF
IR
IR
tfr
VFP
Min
Typ
350
4.5
IRM
tIRM
trr
F
VBatt=200V, Tj=100°C,
iR=0.25xIRM
IF=0.5A, IR=1A, iR=0.25A
Max
1.9
1.8
50
2.5
7.8
200
A
ns
ns
65
ns
220
trr
Unit
V
V
mA
mA
ns
V
Characteristics (Tj = 25_C unless otherwise specified)
16
I FAV– Average Forward Current ( A )
I R – Reverse Current ( mA )
1000
100
10
1
12
RthJA=2K/W
5K/W
8
10K/W
4
85K/W
0.1
0
0
94 9398
40
80
120
160
200
Tj – Junction Temperature ( °C )
Figure 1. Typ. Reverse Current vs. Junction Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
0
94 9397
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Document Number 86021
Rev. 2, 24-Jun-98
BYT12P/1000A
Vishay Telefunken
20
IRM – Reverse Recovery Current ( A )
IF – Forward Current ( A )
100
10
1
Scattering Limit
0.1
15
10
IF = 12A
TC=100°C
5
0.01
0
0
0.6
1.2
1.8
2.4
3.0
VF – Forward Voltage ( V )
94 9396
0
94 9399
1000
200
250
300
350
IF = 12A
dIF/dt=100A/ms
TC=100°C
600
400
200
200
150
100
IF = 12A
TC=100°C
50
0
0
0
3
6
9
12
15
18
21
IF – Forward Current ( A )
94 9403
0
94 9401
Figure 4. Reverse Recovery Charge vs. Forward Current
160
120
80
IF = 12A
TC=100°C
40
50
100
150
200
250
300
350
–dIF/dt – Forward Current Rate of Change ( A/ms )
Figure 7. Reverse Recovery Time vs.
Forward Current Rate of Change
Q rr – Reverse Recovery Charge ( nC )
t IRM – Reverse Recovery Time for IRM ( ns )
150
250
800
1200
IF = 12A
TC=100°C
1000
800
600
400
200
0
0
0
94 9400
100
Figure 6. Reverse Recovery Current vs.
Forward Current Rate of Change
t rr – Reverse Recovery Time ( ns )
Q rr – Reverse Recovery Charge ( nC )
Figure 3. Forward Current vs. Forward Voltage
50
–dIF/dt – Forward Current Rate of Change ( A/ms )
50
100
150
200
250
300
350
–dIF/dt – Forward Current Rate of Change ( A/ms )
Figure 5. Reverse Recovery Time for IRM vs.
Forward Current Rate of Change
Document Number 86021
Rev. 2, 24-Jun-98
0
94 9402
50
100
150
200
250
300
350
–dIF/dt – Forward Current Rate of Change ( A/ms )
Figure 8. Reverse Recovery Charge vs.
Forward Current Rate of Change
www.vishay.de • FaxBack +1-408-970-5600
3 (5)
BYT12P/1000A
Vishay Telefunken
Dimensions in mm
14276
www.vishay.de • FaxBack +1-408-970-5600
4 (5)
Document Number 86021
Rev. 2, 24-Jun-98
BYT12P/1000A
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 86021
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
5 (5)
Similar pages