Vishay BYT51D Standard avalanche sinterglass diode Datasheet

BYT51.
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
Features
•
•
•
•
•
Glass passivated junction
Hermetically sealed package
e2
Low reverse current
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
949539
Rectification diode
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Part
Type differentiation
Package
BYT51A
VR = 50 V; IFAV = 1.5 A
SOD-57
BYT51B
VR = 100 V; IFAV = 1.5 A
SOD-57
BYT51D
VR = 200 V; IFAV = 1.5 A
SOD-57
BYT51G
VR = 400 V; IFAV = 1.5 A
SOD-57
BYT51J
VR = 600 V; IFAV = 1.5 A
SOD-57
BYT51K
VR = 800 V; IFAV = 1.5 A
SOD-57
BYT51M
VR = 1000 V; IFAV = 1.5 A
SOD-57
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current
Document Number 86028
Rev. 1.7, 14-Apr-05
Test condition
see electrical characteristics
tp = 10 ms, half sinewave
Part
Symbol
Value
Unit
BYT51A
VR = VRRM
50
V
BYT51B
VR = VRRM
100
V
BYT51D
VR = VRRM
200
V
BYT51G
VR = VRRM
400
V
BYT51J
VR = VRRM
600
V
BYT51K
VR = VRRM
800
V
BYT51M
VR = VRRM
1000
V
IFSM
50
A
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BYT51.
Vishay Semiconductors
Parameter
Test condition
Part
Symbol
Value
Unit
IFRM
9
A
on PC board
IFAV
1
A
l = 10 mm
IFAV
1.5
A
Tj = Tstg
- 55 to + 175
°C
ER
20
mJ
Repetitive peak forward current
Average forward current
Junction and storage
temperature range
I(BR)R = 1 A
Non repetitive reverse
avalanche energy
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
Symbol
Value
Unit
l = 10 mm, TL = constant
RthJA
45
K/W
on PC board with spacing
25 mm
RthJA
100
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Reverse current
Reverse recovery time
Symbol
Typ.
Max
Unit
0.95
1.1
V
1.0
V
IR
1
µA
IR
100
µA
trr
4
µs
IF = 1 A
VF
IF = 1 A, Tj = 175 °C
VF
VR = VRRM
VR = VRRM, Tj = 150 °C
IF = 0.5 A, IR = 1 A, iR = 0.25 A
Min
120
l
l
10
100
I F – Forward Current ( A )
RthJA Therm. Resist. Junction/Ambient (K/W)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
80
TL= constant
60
40
20
0
T j = 175°C
0.1
Tj = 2 5°C
0.01
0.001
0
5
94 9101
10
15
20
25
30
l - Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
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1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
16323
V F – Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
Document Number 86028
Rev. 1.7, 14-Apr-05
BYT51.
Vishay Semiconductors
R thJA = 45 K/W
l = 10 mm
1.4
1.2
1.0
0.8
0.6
RthJA =100 K/W
PCB: d = 25 mm
0.4
0.2
0.0
0
20
40
60
V R = VRRM
300
250
150
PR -Limit
@80 % VR
100
50
0
25
50
75
100
125
150
175
Tj - Junction Temperature ( °C )
16326
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
45
CD - Diode Capacitance ( pF )
1000
V R = VRRM
I R - Reverse Current ( µA )
PR -Limit
@100 % VR
200
80 100 120 140 160 180
Tamb – Ambient Temperature ( °C )
16324
350
PR - Reverse Power Dissipation ( mW )
I FAV – Average Forward Current ( A )
1.6
100
10
f =1 MHz
40
35
30
25
20
15
10
5
1
25
16325
50
75
100
125
150
0
0.1
175
Tj – Junction Temperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
1
10
100
V R - Reverse Voltage ( V )
16327
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
3.6 (0.140)max.
94 9538
Cathode Identification
ISO Method E
0.82 (0.032) max.
26(1.014) min.
Document Number 86028
Rev. 1.7, 14-Apr-05
4.0 (0.156) max.
26(1.014) min.
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BYT51.
Vishay Semiconductors
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It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
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earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
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respectively
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Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
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Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 86028
Rev. 1.7, 14-Apr-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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Document Number: 91000
Revision: 08-Apr-05
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