PHILIPS BYV133F Rectifier diodes schottky barrier Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
GENERAL DESCRIPTION
Dual, low leakage, platinum barrier,
schottky rectifier diodes in a full pack
plastic envelope featuring low
forward voltage drop, absence of
stored charge. and guaranteed
reverse surge capability. The devices
are intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and zero switching losses
are important.
PINNING - SOT186
PIN
BYV133F series
QUICK REFERENCE DATA
SYMBOL
VRRM
VF
IO(AV)
PARAMETER
BYV133FRepetitive peak reverse
voltage
Forward voltage
Average output current
(both diodes conducting)
PIN CONFIGURATION
MAX.
MAX.
MAX.
UNIT
35
35
40
40
45
45
V
0.60
20
0.60
20
0.60
20
V
A
SYMBOL
DESCRIPTION
case
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
a2
3
a1
1
k2
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VRWM
VR
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Ths ≤ 112 ˚C
IO(AV)
Average output current (both
diodes conducting)
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current, per diode
IO(RMS)
IFRM
IFSM
I2t
IRRM
IRSM
Tstg
Tj
August 1996
CONDITIONS
square wave; δ = 0.5;
Ths ≤ 61 ˚C
t = 25 µs; δ = 0.5;
Ths ≤ 61 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal Tj = 125 ˚C prior
to surge; with reapplied
VRRM(max)
I2t for fusing
t = 10 ms
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode.
Non-repetitive peak reverse
tp = 100 µs
current per diode.
Storage temperature
Operating junction temperature
1
MIN.
-
MAX.
-35
35
35
35
-40
40
40
40
UNIT
-45
45
45
45
V
V
V
-
20
A
-
20
A
-
20
A
-
100
110
A
A
-
50
1
A2s
A
-
1
A
-65
-
175
150
˚C
˚C
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
BYV133F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all
three terminals to external
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
1500
V
-
12
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
6
5
K/W
K/W
-
55
-
K/W
MIN.
TYP.
MAX.
UNIT
-
0.55
0.88
50
4
300
0.60
0.94
100
15
-
V
V
µA
mA
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Thermal resistance junction to
heatsink
Rth j-a
Thermal resistance junction to
ambient
per diode
both diodes
(with heatsink compound)
in free air.
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage (per diode)
IR
Reverse current (per diode)
Cd
Junction capacitance (per
diode)
IF = 7 A; Tj = 150˚C
IF = 20 A
VR = VRRM
VR = VRRM; Tj = 125 ˚C
f = 1MHz; VR = 5V; Tj = 25 ˚C to
125 ˚C
August 1996
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
BYV133
PF / W
12
BYV133F series
Ths(max) / C
Vo = 0.4460 V
Rs = 0.0220 Ohms
78
IR / mA
100
BYV133
D = 1.0
90
10
10
0.5
8
0.1
150 C
102
0.2
125 C
1
114
6
100 C
4
tp
I
126
tp
D=
T
2
75 C
0
5
Tj = 50 C
t
T
0
0.1
138
0.01
150
15
10
0
25
VR/ V
IF(AV) / A
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
9
PF / W
Ths(max) / C
BYV133
Vo = 0.446 V
Rs = 0.022 Ohms
8
1.9
96
114
5
120
4
126
3
132
2
138
1
144
0
1
2
3
4
5
6
IF(AV) / A
7
8
9
100
10
150
10
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
50
IF / A
BYV133
108
6
0
Cd / pF
1000
a = 1.57
2.8
4
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
102
2.2
7
50
1
10
VR / V
100
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Zth j-hs (K/W)
BYV133
10
Tj = 25 C
Tj = 150 C
40
1
30
typ
max
20
0.1
PD
tp
10
t
0
0
0.2
0.4
0.6
VF / V
0.8
1
1.2
0.01
1.4
10us
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
August 1996
1ms
tp (s)
0.1s
10s
Fig.6. Transient thermal impedance; per diode;
Zth j-hs = f(tp).
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
BYV133F series
MECHANICAL DATA
Dimensions in mm
10.2
max
5.7
max
3.2
3.0
Net Mass: 2 g
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
0.4
2
3
0.9
0.7
M
0.55 max
2.54
1.3
5.08
top view
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1996
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
BYV133F series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
5
Rev 1.100
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