BYY53 / BYY54 25A Silicon Power Rectifier Diode Part no. Description The BYY53/54 are hermetically sealed 25Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for parallel connecting in rectifier stacks and backoff-diodes Features Applications • Forward current 25A • Power supplies • Reverse voltage 75V – 1500V • Rectifier diode in car generators • Hermetic press-fit package • Rectifier bridges/stacks • Available in different modifications of the package • Back-off-diodes Pinout details Typical application circuit Six pulse bridge connection 1 3 x BYY53-1200 ~ ~ ~ 3 x BYY54-1200 2 BYY53: 1 – cathode; 2 - anode + BYY54: 1 – anode; 2 - cathode - Ordering information Device Quantity per box BYY53-75; …; BYY53-1500 500 BYY54-75; …; BYY54-1500 500 Options The package quantities for the different package modifications are included in “PressFitPackageModifications.pdf” Device marking Devices are identified by type. Colour of marking: BYY53- black, BYY54 – red 422........................................……. date code 422 = 2004 week 22 ZETEX BYY53………………………………... diode type 400………………………………….. repetitive peak reverse voltage VRRM (in V) 400 Issue 2 – November 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com BYY53 / BYY54 Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter Repetitive peak reverse voltage Symbol Unit BYY53-75 BYY54-75 75 BYY53-100 BYY54-100 100 BYY53-150 BYY54-150 150 BYY53-200 BYY54-200 200 BYY53-300 BYY54-300 300 BYY53-400 BYY54-400 400 BYY53-500 BYY54-500 500 BYY53-600 BYY54-600 600 BYY53-700 BYY54-700 BYY53-800 BYY54-800 800 BYY53-900 BYY54-900 900 BYY53-1000 BYY54-1000 1000 BYY53-1100 BYY54-1100 1100 BYY53-1200 BYY54-1200 1200 BYY53-1300 BYY54-1300 1300 BYY53-1400 BYY54-1400 1400 BYY53-1500 BYY54-1500 1500 Forward current, arithmetic value VRRM IFAV 700 25 V IFSM A 350 900 Maximum rated value ∫i²dt A²s 780 Repetitive peak forward current IFRM=π*IFAV 79 A Effective forward current IFRMS 45 A Junction temperature TJmax 200 °C Storage temperature range Tstg - 50 to + 175 °C Issue 2 – November 2006 2 © Zetex Semiconductors plc 2006 Tc = 150°C A 425 Surge forward current Test condition half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms half-sine wave, ≤ 10 ms TJ = 175°C half-sine wave, ≤ 10 ms f = >15 Hz www.zetex.com BYY53 / BYY54 Thermal resistance Parameter Junction to case Symbol Value Unit RθJC 1.2 °C/W IF (A) Thermal characteristics 30 25 20 15 10 5 0 168°C 200°C -50 0 50 100 150 200 250 TC (°C) Forward current derating diagram IF (A) Electrical characteristics (at Tamb = 25°C unless otherwise stated) 30 25 20 15 10 5 0 0,75 0,8 0,85 0,9 0,95 1 VF (V) Forward voltage characteristic Issue 2 – November 2006 © Zetex Semiconductors plc 2006 3 www.zetex.com BYY53 / BYY54 Issue 2 – November 2006 © Zetex Semiconductors plc 2006 4 www.zetex.com BYY53 / BYY54 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter BYY53-75...1200 BYY54-75...1200 BYY53-1300...1500 BYY54-1300...1500 BYY53-75...1200 BYY54-75...1200 BYY53-1300...1500 Forward BYY54-1300...1500 voltage (information BYY53-75...1200 BYY54-75...1200 values) BYY53-1300...1500 BYY54-1300...1500 Forward voltage BYY53-75...150 BYY54-75...150 BYY53-200...1500 Reverse BYY54-200...1500 current BYY53-75...400 BYY54-75...400 BYY53-500...1500 BYY54-500...1500 Threshold voltage (information value) Slope resistance (information value) Symbol Min. Typ. Max. - 0.95 1.1 - 1.1 1.15 - 0.82 - Unit VF V VF V - 0.85 - - - 1.20 - - 1.25 - - 3 VF V IRRM - - 1.5 - - 0.25 IRRM Test contitions IF = 25 A, measuring time 10ms (half-sine wave) IF = 20 A, measuring time 10ms (half-sine wave),TJ = 150°C IF = 35 A, mA TJ = 150°C, at VRRM mA at VRRM - - 0.1 V(FO) - 0.66 - V TJ = 175°C rF - 5.75 - mΩ TJ = 175°C Options: Electrical characteristics for parallel connecting (at Tamb = 25°C unless otherwise stated) Option 1 2 Parameter Forward voltage difference in one category of forward voltage Reverse current in one category of forward voltage (only for BYY53-300…1500 and BYY54-300…1500) Issue 2 – November 2006 © Zetex Semiconductors plc 2006 Symbol ∆VF Min. - Typ. - Max. 0.05 Unit V Test contitions IF = 25 A, measuring time 10ms (half-sine wave) IR - - 0.01 mA at VRRM 5 www.zetex.com BYY53 / BYY54 Packaging details Package dimensions Dimensions in millimeters are control dimensions, dimensions in inches are approximate DIM A A1 A2 b D D1 D2 L MIN 15,00 5,90 2,10 3,10 15,50 12,75 12,30 3,00 Millimeters TYP 15,50 6,10 2,30 3,40 15,70 12,80 12,50 3,50 MAX 16,00 6,30 2,50 3,70 15,90 12,85 12,70 4,00 MIN 0,591 0,232 0,083 0,122 0,610 0,502 0,484 0,118 Inches TYP 0,610 0,240 0,091 0,134 0,618 0,504 0,492 0,138 MAX 0,630 0,248 0,098 0,146 0,626 0,506 0,500 0,157 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 2 – November 2006 © Zetex Semiconductors plc 2006 6 www.zetex.com