Diotech BZX4V3 1.3w epitaxial zener diode Datasheet

BZX85C3V3 THRU BZX85C56
1.3W EPITAXIAL ZENER DIODE
FEATURES
DO-41(GLASS)
Φ 2.5 ± 0.2
4.5 ± 0.2
25.4 ± 1
Φ 0.8± 0.1
• Low profile package
• Built-in strain relief
• Low inductance
• High temperature soldering : 260°C /10 seconds at terminals
• Glass package has Underwriters Laboratory Flammability
Classification
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
25.4 ± 1
• Case: Molded Glass DO-41G
• Terminals: Axial leads, solderable per MIL-STD-750,
Method 2026 guaranteed
• Polarity: Color band denotes positive end
• Mounting position:Any
• Weight: 0.012 ounce, 0.336 gram
All Dimensions in mm
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25℃)
Symbols
Value
Units
Zener current see table "Characteristics"
Power dissipation at TA=50℃
Junction temperature
Storage temperature range
1.3 1)
W
TJ
175
TSTG
-65 to +200
℃
℃
Ptot
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
ELECTRCAL CHARACTERISTICS(TA=25℃)
Symbols
Thermal resistance junction to ambient
Forward voltage at IF=200mA
Min
RthA
VF
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
Typ
Max
170
1.2
1)
Units
℃/W
V
BZX85C3V3 THRU BZX85C56
1.3W EPITAXIAL ZENER DIODE
Type
BZX85C
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
VZnom
V
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
IZT
mA
80
80
80
60
60
50
45
45
45
35
35
35
25
25
25
20
20
20
15
15
15
10
10
10
8
8
8
8
6
6
4
4
4
for VZT and
r zjT
1)
Ω
<20
<20
<20
<20
<15
<13
<13
<10
<7
<4
<3.5
<3
<5
<5
<7
<8
<9
<10
<15
<15
<20
<24
<25
<25
<30
<30
<35
<40
<50
<50
<90
<115
<120
V
2.5~2.9
2.8~3.2
3.1~3.5
3.4~3.8
3.7~4.1
4.0~4.6
4.4~5.0
4.8~5.4
5.2~6.0
5.8~6.6
6.4~7.2
7.0~7.9
7.7~8.7
8.5~9.6
9.4~10.6
10.4~11.6
11.4~12.7
12.4~14.1
13.8~15.6
15.3~17.1
16.8~19.1
18.8~21.2
20.8~23.3
22.8~25.6
25.1~28.9
28~32
31~35
34~38
37~41
40~46
44~50
48~54
52~60
rzjK @ I ZK
Ω
<400
<400
<400
<500
<500
<500
<500
<500
<400
<300
<300
<200
<200
<200
<200
<300
<350
<400
<500
<500
<500
<600
<600
<600
<750
<1000
<1000
<1000
<1000
<1000
<1500
<1500
<2000
mA
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
IR
μA
<150
<100
<40
<20
<10
<3
<3
<1
<1
<1
<1
<1
<1
<1
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
<0.5
@
VR
V
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
TKVZ
%/K
-0.09~-0.06
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.08~-0.05
-0.06~-0.03
-0.05~+0.02
-0.02~+0.02
-0.05~+0.05
0.03~0.06
0.03~0.07
0.03~0.07
0.03~0.08
0.03~0.09
0.03~0.1
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.03~0.11
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
0.04~0.12
BZX85C3V3 THRU BZX85C56
RATINGS AND CHARACTERISTIC CURVES
RthJA – Therm. Resist. Junction/
Ambient (K/W)
Ptot –Total Power Dissipation (W)
Characteristics (Tj=25℃ unless otherwise specified)
l – Lead Length (mm)
Tamb – Ambient Temperature(℃)
Figure2. Thermal Resistance vs. Lead Length
Figure1.Total Power Dissipation vs. Ambient
VR=0V
VR=2V
VR=5V
VR=20V
VR=30V
rz –Differential Z-Resistance (Ω )
CD –Diode Capacitance (pF)
Temperature
Vz-Z-Voltage (V)
Figure4.Differential Z-Resistance vs.Z-Voltage
Pulse Cond. (K/W)
Zthp – Thermal Resistance for
Figure3. Diode Capacitance vs. Z-Voltage
Vz-Z-Voltage (V)
Figure5. Thermal Response
tp –Pulse Length (ms)