ON BZX84C10LT1G Zener voltage regulator Datasheet

BZX84BxxxLT1G,
BZX84CxxxLT1G Series,
SZBZX84BxxxLT1G,
SZBZX84CxxxLT1G Series
Zener Voltage Regulators
www.onsemi.com
250 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
SOT−23
CASE 318
STYLE 8
3
Cathode
Features
•
•
•
•
•
•
•
•
1
Anode
MARKING DIAGRAM
250 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Tight Tolerance Series Available (See Page 4)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
XXXMG
G
1
XXX
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
Package
Shipping†
BZX84CxxxLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZBZX84CxxxLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BZX84CxxxLT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SZBZX84CxxxLT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
BZX84BxxxLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZBZX84BxxxLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BZX84BxxxLT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SZBZX84BxxxLT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 22
1
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
Publication Order Number:
BZX84C2V4LT1/D
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
MAXIMUM RATINGS
Rating
Symbol
Total Power Dissipation on FR−5 Board,
(Note 1) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Max
Unit
250
2.0
500
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
PD
RqJA
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
300
2.4
417
Junction and Storage Temperature Range
TJ, Tstg
−65 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
C
IF
Parameter
Symbol
QVZ
I
VZ VR
IR VF
IZT
Maximum Temperature Coefficient of VZ
Max. Capacitance @ VR = 0 and f = 1 MHz
Zener Voltage Regulator
www.onsemi.com
2
V
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Device
Marking
Min
Nom
Max
ZZT1
(W)
@ IZT1 =
5 mA
BZX84C2V4LT1G
Z11
2.2
2.4
2.6
BZX84C2V7LT1G
Z12
2.5
2.7
2.9
BZX84C3V0LT1G
Z13
2.8
3
BZX84C3V3LT1G
Z14
3.1
BZX84C3V6LT1G
Z15
3.4
BZX84C3V9LT1G
Z16
BZX84C4V3LT1G
BZX84C4V7LT1/T3G
VZ2 (V)
@ IZT2 = 1 mA
(Note 3)
Min
Max
ZZT2
(W)
@ IZT2 =
1 mA
100
1.7
2.1
100
1.9
2.4
3.2
95
2.1
3.3
3.5
95
3.6
3.8
90
3.7
3.9
4.1
W9
4
4.3
Z1
4.4
4.7
BZX84C5V1LT1/T3G
Z2
4.8
BZX84C5V6LT1/T3G
Z3
5.2
BZX84C6V2LT1/T3G
Z4
BZX84C6V8LT1/T3G
BZX84C7V5LT1G
VZ3 (V)
@ IZT3 = 20 mA
(Note 3)
Min
Max
ZZT3
(W)
@ IZT3 =
20 mA
600
2.6
3.2
50
600
3
3.6
50
2.7
600
3.3
3.9
2.3
2.9
600
3.6
2.7
3.3
600
3.9
90
2.9
3.5
600
4.6
90
3.3
4
5
80
3.7
4.7
5.1
5.4
60
4.2
5.3
5.6
6
40
4.8
6
5.8
6.2
6.6
10
5.6
Z5
6.4
6.8
7.2
15
Z6
7
7.5
7.9
15
BZX84C8V2LT1G
Z7
7.7
8.2
8.7
BZX84C9V1LT1/T3G
Z8
8.5
9.1
BZX84C10LT1G
Z9
9.4
10
BZX84C11LT1G
Y1
10.4
11
BZX84C12LT1G
Y2
11.4
BZX84C13LT1G
Y3
12.4
BZX84C15LT1/T3G
Y4
BZX84C16LT1G
BZX84C18LT1/T3G
Max Reverse
Leakage
Current
qVZ
(mV/k)
@ IZT1 = 5 mA
VR
Volts
Min
Max
C (pF)
@ VR = 0
f = 1 MHz
50
1
−3.5
0
450
20
1
−3.5
0
450
50
10
1
−3.5
0
450
4.2
40
5
1
−3.5
0
450
4.5
40
5
1
−3.5
0
450
4.1
4.7
30
3
1
−3.5
−2.5
450
600
4.4
5.1
30
3
1
−3.5
0
450
500
4.5
5.4
15
3
2
−3.5
0.2
260
480
5
5.9
15
2
2
−2.7
1.2
225
400
5.2
6.3
10
1
2
−2.0
2.5
200
6.6
150
5.8
6.8
6
3
4
0.4
3.7
185
6.3
7.2
80
6.4
7.4
6
2
4
1.2
4.5
155
6.9
7.9
80
7
8
6
1
5
2.5
5.3
140
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2
6.2
135
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8
7.0
130
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7
4.5
8.0
130
11.6
20
10.2
11.6
150
10.4
11.8
10
0.1
8
5.4
9.0
130
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8
6.0
10.0
130
13
14.1
30
12.3
14
170
12.5
14.2
15
0.1
8
7.0
11.0
120
13.8
15
15.6
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13.0
110
Y5
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14.0
105
Y6
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16.0
100
BZX84C20LT1G
Y7
18.8
20
21.2
55
18.7
21.1
225
18.9
21.4
20
0.05
14
14.4
18.0
85
BZX84C22LT1G
Y8
20.8
22
23.3
55
20.7
23.2
250
20.9
23.4
25
0.05
15.4
16.4
20.0
85
BZX84C24LT1G
Y9
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22.0
80
Device*
VZ1 Below
@ IZT1 = 2 mA
VZ2 Below
@ IZT2 = 0.1 mA
VZ3 Below
@ IZT3 = 10 mA
Device
Marking
Min
Nom
Max
ZZT1
Below
@ IZT1 =
2 mA
Min
Max
ZZT2
Below
@ IZT4 =
0.5 mA
Min
Max
ZZT3
Below
@ IZT3 =
10 mA
BZX84C27LT1G
Y10
25.1
27
28.9
80
25
28.9
300
25.2
29.3
45
BZX84C30LT1G
Y11
28
30
32
80
27.8
32
300
28.1
32.4
BZX84C33LT1/T3G
Y12
31
33
35
80
30.8
35
325
31.1
BZX84C36LT1G
Y13
34
36
38
90
33.8
38
350
34.1
BZX84C39LT1G
Y14
37
39
41
130
36.7
41
350
BZX84C43LT1G
Y15
40
43
46
150
39.7
46
BZX84C47LT1G
Y16
44
47
50
170
43.7
50
BZX84C51LT1G
Y17
48
51
54
180
47.6
BZX84C56LT1G
Y18
52
56
60
200
51.5
BZX84C62LT1G
Y19
58
62
66
215
BZX84C68LT1G
Y20
64
68
72
BZX84C75LT1G
Y21
70
75
79
Device*
IR
mA
@
Max Reverse
Leakage
Current
qVZ
(mV/k) Below
@ IZT1 = 2 mA
VR
(V)
Min
Max
C (pF)
@ VR = 0
f = 1 MHz
0.05
18.9
21.4
25.3
70
50
0.05
21
24.4
29.4
70
35.4
55
0.05
23.1
27.4
33.4
70
38.4
60
0.05
25.2
30.4
37.4
70
37.1
41.5
70
0.05
27.3
33.4
41.2
45
375
40.1
46.5
80
0.05
30.1
37.6
46.6
40
375
44.1
50.5
90
0.05
32.9
42.0
51.8
40
54
400
48.1
54.6
100
0.05
35.7
46.6
57.2
40
60
425
52.1
60.8
110
0.05
39.2
52.2
63.8
40
57.4
66
450
58.2
67
120
0.05
43.4
58.8
71.6
35
240
63.4
72
475
64.2
73.2
130
0.05
47.6
65.6
79.8
35
255
69.4
79
500
70.3
80.2
140
0.05
52.5
73.4
88.6
35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*Includes SZ-prefix devices where applicable.
www.onsemi.com
3
IR
mA
@
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
VZ (Volts) @ IZT = 5 mA
(Note 4)
Max Reverse
Leakage
Current
ZZT (W) @
IZT = 5 mA
(Note 4)
IR
mA
qVZ
(mV/k)
@ IZT = 5 mA
Max
C (pF)
@ VR =0,
f = 1 MHz
−3.5
0
450
−3.5
0.2
260
−2.7
1.2
225
2
−2
2.5
200
4
0.4
3.7
185
2
4
1.2
4.5
155
15
1
5
2.5
5.3
140
15
0.7
5
3.2
6.2
135
9.28
15
0.5
6
3.8
7
130
10.2
20
0.2
7
4.5
8
130
12
12.2
25
0.1
8
6
10
130
14.7
15
15.3
30
0.05
10.5
9.2
13
110
15.7
16
16.3
40
0.05
11.2
10.4
14
105
T20
17.6
18
18.4
45
0.05
12.6
12.4
16
100
BZX84B22LT1G
T24
21.6
22
22.4
55
0.05
15.4
16.4
20
85
BZX84B24LT1G
T25
23.5
24
24.5
70
0.05
16.8
18.4
22
80
Device
Marking
Min
Nom
Max
Max
BZX84B3V3LT1G
T2A
3.23
3.3
3.37
95
BZX84B4V7LT1G
T10
4.61
4.7
4.79
80
BZX84B5V1LT1G
T11
5.00
5.1
5.20
BZX84B5V6LT1G
T12
5.49
5.6
BZX84B6V2LT1G
T13
6.08
6.2
BZX84B6V8LT1G
T14
6.66
BZX84B7V5LT1G
T15
BZX84B8V2LT1G
T16
BZX84B9V1LT1G, T3G
BZX84B10LT1G
BZX84B12LT1G
VR
@
Volts
Min
5
1
3
2
60
2
2
5.71
40
1
6.32
10
3
6.8
6.94
15
7.35
7.5
7.65
8.04
8.2
8.36
T17
8.92
9.1
T2E
9.8
10
T18
11.8
BZX84B15LT1G
T22
BZX84B16LT1G
T19
BZX84B18LT1G
Device
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
VZ (Volts) @ IZT = 2 mA
(Note 4)
Device*
BZX84B27LT1G
ZZT (W) @
IZT = 2 mA
(Note 4)
Device
Marking
Min
Nom
Max
Max
T27
26.5
27
27.5
80
*Includes SZ-prefix devices where applicable.
www.onsemi.com
4
Max Reverse
Leakage
Current
IR
mA
0.05
qVZ
(mV/k)
@ IZT = 2 mA
Volts
Min
Max
C (pF)
@ VR =0,
f = 1 MHz
18.9
21.4
25.3
70
VR
@
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
8
100
7
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
6
5
4
VZ @ IZT
3
2
1
0
-1
-2
-3
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
TYPICAL TC VALUES
VZ @ IZT
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
IZ = 1 mA
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE ( Ω )
1000
100
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
10
150°C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 3. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0.6
0°C
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
www.onsemi.com
5
1.1
1.2
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
1 V BIAS
I R , LEAKAGE CURRENT (μA)
TA = 25°C
100
BIAS AT
50% OF VZ NOM
10
1
1
100
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
10
1
+150°C
0.1
0.01
0.001
+25°C
0.0001
-55°C
0.00001
0
10
Figure 5. Typical Capacitance
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
100
100
TA = 25°C
I Z , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
TA = 25°C
10
1
0.1
0.01
80
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
1
0.1
0.01
12
10
10
10
30
50
70
VZ, ZENER VOLTAGE (V)
90
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
www.onsemi.com
6
90
BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
◊
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BZX84C2V4LT1/D