ON BZX84C22ET1G Zener voltage regulator Datasheet

BZX84CxxxET1G Series,
SZBZX84CxxxET1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
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Specification Features









225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 X 20 ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
SOT−23
CASE 318
STYLE 8
3
Cathode
MARKING DIAGRAM
xxx M G
G
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL  25C
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25C
Derated above 25C
Thermal Resistance, Junction−to−Ambient
PD
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25C
Derated above 25C
Thermal Resistance, Junction−to−Ambient
PD
RqJA
Junction and Storage Temperature Range
TJ, Tstg
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
MAXIMUM RATINGS
RqJA
1
xxx
M
G
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
Rating
1
Anode
ORDERING INFORMATION
Package
Shipping†
BZX84CxxxET1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZBZX84CxxxET1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BZX84CxxxET3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SZBZX84CxxxET3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
Device
225
1.8
556
mW
mW/C
C/W
300
2.4
417
mW
mW/C
C/W
−65 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 8
1
DEVICE MARKING INFORMATION
Publication Order Number:
BZX84C2V4ET1/D
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C
unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Symbol
Reverse Zener Voltage @ IZT
IZT
Reverse Current
ZZT
Maximum Zener Impedance @ IZT
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
C
IF
Parameter
VZ
QVZ
I
VZ VR
IR VF
IZT
Maximum Temperature Coefficient of VZ
Max. Capacitance @ VR = 0 and f = 1 MHz
Zener Voltage Regulator
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2
V
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
VZ1 (V)
@ IZT1 = 5 mA
(Note 4)
Device
Marking
Min
Nom
Max
ZZT1
(W)
@ IZT1
=
5 mA
BZX84C2V4ET1G
BA1
2.2
2.4
2.6
BZX84C2V7ET1G
BA2
2.5
2.7
2.9
BZX84C3V0ET1G
BA3
2.8
3.0
BZX84C3V3ET1G
BA4
3.1
BZX84C3V6ET1G
BA5
BZX84C3V9ET1G
VZ2 (V)
@ IZT2 = 1
mA
(Note 4)
Min
Max
ZZT2
(W)
@ IZT2
=
1 mA
100
1.7
2.1
100
1.9
2.4
3.2
95
2.1
3.3
3.5
95
3.4
3.6
3.8
BA6
3.7
3.9
BZX84C4V3ET1G
BA7
4.0
BZX84C4V7ET1G
BA9
4.4
BZX84C5V1ET1G
BB1
BZX84C5V6ET1G
VZ3 (V)
@ IZT3=20 mA
(Note 4)
Max
Reverse
Leakage
Current
qVZ
C (pF)
(mV/k)
@
@ IZT1=5 mA
VR = 0
f=
Min Max 1 MHz
Min
Max
ZZT3
(W)
@
IZT3=
20 mA
600
2.6
3.2
50
50
1.0
−3.5
0
450
600
3.0
3.6
50
20
1.0
−3.5
0
450
2.7
600
3.3
3.9
50
10
1.0
−3.5
0
450
2.3
2.9
600
3.6
4.2
40
5.0
1.0
−3.5
0
450
90
2.7
3.3
600
3.9
4.5
40
5.0
1.0
−3.5
0
450
4.1
90
2.9
3.5
600
4.1
4.7
30
3.0
1.0
−3.5
−2.5
450
4.3
4.6
90
3.3
4.0
600
4.4
5.1
30
3.0
1.0
−3.5
0
450
4.7
5.0
80
3.7
4.7
500
4.5
5.4
15
3.0
2.0
−3.5
0.2
260
4.8
5.1
5.4
60
4.2
5.3
480
5.0
5.9
15
2.0
2.0
−2.7
1.2
225
BB2
5.2
5.6
6.0
40
4.8
6.0
400
5.2
6.3
10
1.0
2.0
−2
2.5
200
BZX84C6V2ET1G
BB3
5.8
6.2
6.6
10
5.6
6.6
150
5.8
6.8
6
3.0
4.0
0.4
3.7
185
BZX84C6V8ET1G
BB4
6.4
6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2.0
4.0
1.2
4.5
155
BZX84C7V5ET1G
BB5
7.0
7.5
7.9
15
6.9
7.9
80
7.0
8.0
6
1.0
5.0
2.5
5.3
140
BZX84C8V2ET1G
BB6
7.7
8.2
8.7
15
7.6
8.7
80
7.7
8.8
6
0.7
5.0
3.2
6.2
135
BZX84C9V1ET1G
BB7
8.5
9.1
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6.0
3.8
7.0
130
BZX84C10ET1G
BB8
9.4
10
10.6
20
9.3
10.6
150
9.4
10.7
10
0.2
7.0
4.5
8.0
130
BZX84C11ET1G
BB9
10.4
11
11.6
20
10.2
11.6
150
10.4
11.8
10
0.1
8.0
5.4
9.0
130
BZX84C12ET1G
BC1
11.4
12
12.7
25
11.2
12.7
150
11.4
12.9
10
0.1
8.0
6.0
10
130
BZX84C13ET1G
BC2
12.4
13
14.1
30
12.3
14
170
12.5
14.2
15
0.1
8.0
7.0
11
120
BZX84C15ET1G
BC3
13.8
15
15.6
30
13.7
15.5
200
13.9
15.7
20
0.05
10.5
9.2
13
110
BZX84C16ET1G
BC4
15.3
16
17.1
40
15.2
17
200
15.4
17.2
20
0.05
11.2
10.4
14
105
BZX84C18ET1G
BC5
16.8
18
19.1
45
16.7
19
225
16.9
19.2
20
0.05
12.6
12.4
16
100
BZX84C20ET1G
BC6
18.8
20
21.2
55
18.7
21.1
225
18.9
21.4
20
0.05
14
14.4
18
85
BZX84C22ET1G
BC7
20.8
22
23.3
55
20.7
23.2
250
20.9
23.4
25
0.05
15.4
16.4
20
85
BZX84C24ET1G
BC8
22.8
24
25.6
70
22.7
25.5
250
22.9
25.7
25
0.05
16.8
18.4
22
80
Device*
VZ2 Below
@ IZT2 =
0.1 mA
Device
Marking
Min
Nom
Max
ZZT1
Below
@ IZT1
=
2 mA
Min
Max
ZZT3
Below
@ IZT3
=
10 mA
BZX84C27ET1G
BC9
25.1
27
28.9
80
25
28.9
300
25.2
29.3
BZX84C30ET1G
BD1
28
30
32
80
27.8
BZX84C33ET1G
BD2
31
33
35
80
30.8
32
300
28.1
35
325
31.1
BZX84C36ET1G
BD3
34
36
38
90
33.8
38
350
BZX84C39ET1G
BD4
37
39
41
130
36.7
41
BZX84C43ET1G
BK6
40
43
46
150
39.7
BZX84C47ET1G
BD5
44
47
50
170
BZX84C51ET1G
BD6
48
51
54
BZX84C56ET1G
BZX84C62ET1G
BD7
52
56
BD8
58
62
BZX84C68ET1G
BD9
64
BZX84C75ET1G
BE1
70
Device*
Min
Max
Max
Reverse
Leakage
Current
qVZ
(mV/k)
Below
@ IZT1 = 2
mA
V
IR
@ R
(V)
mA
Min
Max
C (pF)
@ VR
=0
f=
1 MHz
45
0.05
18.9
21.4
25.3
70
32.4
50
0.05
21
24.4
29.4
70
35.4
55
0.05
23.1
27.4
33.4
70
34.1
38.4
60
0.05
25.2
30.4
37.4
70
350
37.1
41.5
70
0.05
27.3
33.4
41.2
45
46
375
40.1
46.5
80
0.05
30.1
37.6
46.6
40
43.7
50
375
44.1
50.5
90
0.05
32.9
42
51.8
40
180
47.6
54
400
48.1
54.6
100
0.05
35.7
46.6
57.2
40
60
200
51.5
60
425
52.1
60.8
110
0.05
39.2
52.2
63.8
40
66
215
57.4
66
450
58.2
67
120
0.05
43.4
58.8
71.6
35
68
72
240
63.4
72
475
64.2
73.2
130
0.05
47.6
65.6
79.8
35
75
79
255
69.4
79
500
70.3
80.2
140
0.05
52.5
73.4
88.6
35
VZ1 Below
@ IZT1 = 2 mA
ZZT2
Below
@ IZT4
=
0.5 mA
V
IR
@ R
(V)
mA
VZ3 Below
@ IZT3 = 10 mA
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25C
* Include SZ-prefix devices where applicable.
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3
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
8
100
7
 VZ, TEMPERATURE COEFFICIENT (mV/C)
 VZ, TEMPERATURE COEFFICIENT (mV/C)
TYPICAL CHARACTERISTICS
TYPICAL TC VALUES
6
5
4
VZ @ IZT
3
VZ @ IZT
10
2
1
0
−1
−2
−3
TYPICAL TC VALUES
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55C to +150C)
Figure 2. Temperature Coefficients
(Temperature Range − 55C to +150C)
1000
IZ = 1 mA
TJ = 255C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE (  )
1000
100
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
10
150C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 3. Effect of Zener Voltage on
Zener Impedance
0.5
75C 25C
0C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
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4
1.1
1.2
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
TYPICAL CHARACTERISTICS
1000
1000
C, CAPACITANCE (pF)
0 V BIAS
I R , LEAKAGE CURRENT (A)
TA = 25C
1 V BIAS
100
BIAS AT
50% OF VZ NOM
1
10
1
+150C
0.1
0.01
10
1
100
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
0.001
+ 25C
0.0001
−55C
0.00001
0
10
Figure 5. Typical Capacitance
1
0.1
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
100
I Z, ZENER CURRENT (mA)
10
0.01
10
1
0.1
0.01
12
10
TA = 25C
10
50
70
VZ, ZENER VOLTAGE (V)
PEAK VALUE IRSM @ 8 ms
tr
90
30
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
50
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
90
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
80
Figure 6. Typical Leakage Current
TA = 25C
% OF PEAK PULSE CURRENT
I Z , ZENER CURRENT (mA)
100
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
20
40
60
t, TIME (ms)
Figure 9. 8  20 ms Pulse Waveform
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5
80
90
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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BZX84C2V4ET1/D