Cree® TR2432™ LEDs Data Sheet CxxxTR2432-Sxx00 Cree’s TR™ LEDs are the newest generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon carbide substrates to deliver superior value for the LCD sideview market. The TR LEDs are among the brightest in the sideview market while delivering a low forward voltage resulting in a very bright and highly efficient solution for the 0.4-mm, 0.6-mm and 0.8-mm sideview market. The design is optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top contacts, consistent with industry standard packaging. FEATURES APPLICATIONS • • Rectangular LED RF Performance Small LCD Backlighting – 0.8 mm, 0.6 mm & − 450 & 460 nm – 27 mW min. 0.4 mm sideview packages – 470 nm – 24 mW min. − Mobile Appliances – 527 nm – 9 mW min. − Digital Cameras − Car Navigation Systems • Epoxy Die Attach • Low Forward Voltage - 3.1 V Typical at 20 mA • 1000-V ESD Threshold Rating 0.4 mm sideview packages • InGaN Junction on Thermally Conductive SiC Substrate − Portable PCs − Monitors • Medium LCD Backlighting – 0.8 mm, 0.6 mm & • LED Video Displays • Entertainment Systems CxxxTR2432-Sxx00 Chip Diagram Bottom View B CPR3DQ Rev Data Sheet: Top View Gold Bond Pad Anode (+) 90 μm Diameter TR2432 LED 240 x 320 μm Gold Bond Pad Cathode (-) 90 x 90 μm Subject to change without notice. www.cree.com Die Cross Section Backside Bottom Surface 140 x 220 μm t = 115 μm 1 Maximum Ratings at TA = 25°C Notes 1&3 CxxxTR2432-Sxx00 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature Range -40°C to +120°C Die Sheet Storage Conditions Electrostatic Discharge Threshold (HBM) ≤30°C / ≤85% RH 1000 V Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Class 2 Note 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Part Number Forward Voltage (Vf, V) Note 3 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450TR2432-Sxx00 2.7 3.1 3.4 2 20 C460TR2432-Sxx00 2.7 3.1 3.4 2 21 C470TR2432-Sxx00 2.7 3.1 3.4 2 21 C527TR2432-Sxx00 2.9 3.2 3.6 2 35 Mechanical Specifications Description CxxxTR2432-Sxx00 Dimension Tolerance P-N Junction Area (μm) 200 x 280 ±35 Chip Area (μm) 240 x 320 ±35 115 ±15 Au Bond Pad Diameter Anode (μm) 90 -5, +15 Au Bond Pad Thicknesses (μm) 1.0 ±0.5 90 x 90 -5, +15 140 x 220 ±35 Chip Thickness (μm) Au Bond Pad Area Cathode (μm) Bottom Area (μm) Notes: 1. 2. 3. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy encapsulation and clear epoxy die attach) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach). Optical characteristics measured in an integrating sphere using Illuminance E. Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR2432 are trademarks of Cree, Inc. 2 CPR3DQ Rev B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxTR2432-Sxx00 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxTR2432-Sxxxx) orders may be filled with any or all bins (CxxxTR2432-xxxx) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20 mA. TR 450 nm Kits Radiant Flux (mW) C450TR2432-S2400 C450TR2432-0317 C450TR2432-0318 C450TR2432-0319 C450TR2432-0320 C450TR2432-0313 C450TR2432-0314 C450TR2432-0315 C450TR2432-0316 C450TR2432-0309 C450TR2432-0310 C450TR2432-0311 C450TR2432-0312 C450TR2432-0305 C450TR2432-0306 C450TR2432-0307 C450TR2432-0308 35 33 30 27 445 447.5 450 452.5 455 Dominant Wavelength (nm) TR 460 nm Kits Radiant Flux (mW) C460TR2432-S2400 C460TR2432-0317 C460TR2432-0318 C460TR2432-0319 C460TR2432-0320 C460TR2432-0313 C460TR2432-0314 C460TR2432-0315 C460TR2432-0316 C460TR2432-0309 C460TR2432-0310 C460TR2432-0311 C460TR2432-0312 C460TR2432-0305 C460TR2432-0306 C460TR2432-0307 C460TR2432-0308 35 33 30 27 455 457.5 460 462.5 465 Dominant Wavelength (nm) Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR2432 are trademarks of Cree, Inc. 3 CPR3DQ Rev B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxTR2432-Sxx00 (continued) TR 470 nm Kits Radiant Flux (mW) C470TR2432-S2100 C470TR2432-0313 C470TR2432-0314 C470TR2432-0315 C470TR2432-0316 C470TR2432-0309 C470TR2432-0310 C470TR2432-0311 C470TR2432-0312 C470TR2432-0305 C470TR2432-0306 C470TR2432-0307 C470TR2432-0308 C470TR2432-0301 C470TR2432-0302 C470TR2432-0303 C470TR2432-0304 33 30 27 24 465 nm 467.5 nm 470 nm 475 nm 472.5 nm Dominant Wavelength (nm) TR 527 nm Kits Radiant Flux (mW) C527TR2432-S0700 C527TR2432-0310 C527TR2432-0311 C527TR2432-0312 C527TR2432-0307 C527TR2432-0308 C527TR2432-0309 C527TR2432-0304 C527TR2432-0305 C527TR2432-0306 C527TR2432-0301 C527TR2432-0302 C527TR2432-0303 15 13 11 9 520 525 530 535 Dominant Wavelength (nm) Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR2432 are trademarks of Cree, Inc. 4 CPR3DQ Rev B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the TR LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage Wavelength Shift vs. Forward Current 100 8 90 6 80 4 2 Shift (nm) If (mA) 70 60 50 40 30 0 -2 -4 -6 -8 20 -10 10 -12 -14 0 0 1 2 3 4 0 5 10 20 30 Vf (V) Relative Intensity vs. Forward Current 60 70 80 90 100 Relative Intensity vs Peak Wavelength 120 Relative Intensity (%) Relative Intensity (%) 50 If (mA) 350% 300% 250% 200% 150% 100% 100 80 60 40 20 50% 0% 0 0 10 20 30 40 50 60 70 80 90 100 320 420 If (mA) Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR2432 are trademarks of Cree, Inc. 5 40 CPR3DQ Rev B 520 620 Wavelength (nm) Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern 460TR238 (TR2432) Radiation PAttern This is a representative radiation pattern for the TR LED product. Actual patterns will vary slightly for each chip. Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR2432 are trademarks of Cree, Inc. 6 CPR3DQ Rev B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com