CREE C460XB500-S3500-A Xbrightâ® power chip led Datasheet

XBright® Power Chip LED
CxxxXB500-Sxx00-A
Cree’s XB™ power chip series of LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity
LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and
require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor
full-motion LED video signs, automotive lighting and white LEDs. Cree’s XB power chips are compatible with optical
power packages that employ proper thermal management.
FEATURES
APPLICATIONS
•
XBright LED Technology
•
General Illumination
•
Larger “Power Chip” Design
–
Automobile
•
High Performance
–
Aircraft
–
35 mW min. (460 nm) Blue
–
Decorative Lighting
–
30 mW min. (470 nm) Blue
–
Task Lighting
–
20 mW min. (505 nm) Traffic Green
–
Outdoor Illumination
–
15 mW min. (527 nm) Green
•
White LEDs
•
Single Wire Bond Structure
•
Crosswalk Signals
•
AuSn Backside Metal
•
Backlighting
CxxxXB500-Sxx00-A Chip Diagram
R3CS, Rev. A
Datasheet: CP
Top View
Bottom View
G•SiC LED Chip
500 x 500 μm
Die Cross Section
376 μm
Contact Metal
Cathode (-)
Bond Pad
120 μm Diameter
SiC Substrate
h = 250 μm
Anode (+)
InGaN
Subject to change without notice.
www.cree.com
Maximum Ratings at TA = 25°C Note 1
CxxxXB500-Sxx00-A
DC Forward Current
150mANote 2
Peak Forward Current (1/10 duty cycle @ 1kHz)
200mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +85°C
Storage Temperature Range
-40°C to +100°C
Electrostatic Discharge Threshold (HBM)Note 3
1000V
Electrostatic Discharge Classification (MIL-STD-883E)Note 3
Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 125mA
Part Number
Forward Voltage (Vf, V)
Note 2
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C460XB500-S3500-A
3.0
3.5
4.0
2
21
C470XB500-S3000-A
3.0
3.5
4.0
2
22
C505XB500-S2000-A
3.0
3.5
4.0
2
30
C527XB500-S1500-A
3.0
3.5
4.0
2
35
Mechanical Specifications
Description
CxxxXB500-S0100-A
Dimension
Tolerance
P-N Junction Area (μm)
448 x 448
± 25
Top Area (μm)
325 x 325
± 25
Bottom Area (μm)
500 x 500
± 50
Chip Thickness (μm)
250
± 25
Au Bond Pad Diameter (μm)
120
± 10
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Options/Thickness (μm)
1.2
± 0.5
376 x 376
± 25
1.7
± 0.3
Notes:
1.
2.
3.
4.
5.
6.
7.
Maximum ratings are package dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant
for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package
to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 125 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are
within the range of average expected by manufacturer in large quantities and are provided for information only. All measurements
were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using
Illuminance E.
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C.
Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the
chip.
XB500™ chips are shipped with the junction side up, requiring die transfer prior to die attach.
Specifications are subject to change without notice.
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc.
CPR3CS Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxXB500-Sxx00-A
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxXB500-Sxx00-A) orders may be filled with any or all bins (CxxxXB500-02xx-A)
contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 125 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
Radiant Flux
C460XB500-S3500-A
55.0 mW
C460XB500-0205-A
C460XB500-0206-A
C460XB500-0207-A
C460XB500-0208-A
C460XB500-0201-A
C460XB500-0202-A
C460XB500-0203-A
C460XB500-0204-A
35.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Radiant Flux
C470XB500-S3000-A
38.0 mW
C470XB500-0205-A
C470XB500-0206-A
C470XB500-0207-A
C470XB500-0208-A
C470XB500-0201-A
C470XB500-0202-A
C470XB500-0203-A
C470XB500-0204-A
30.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Radiant Flux
C505XB500-S2000-A
26.0 mW
C505XB500-0203-A
C505XB500-0204-A
C505XB500-0201-A
C505XB500-0202-A
20.0 mW
500 nm
505 nm
Dominant Wavelength
510 nm
Radiant Flux
C527XB500-S1500-A
24.0 mW
19.0 mW
C527XB500-0207-A
C527XB500-0208-A
C527XB500-0209-A
C527XB500-0204-A
C527XB500-0205-A
C527XB500-0206-A
C527XB500-0201-A
C527XB500-0202-A
C527XB500-0203-A
15.0 mW
520 nm
525 nm
530 nm
Dominant Wavelength
535 nm
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc.
CPR3CS Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves, TA = 25˚C
Dominant Wavelength Shift vs Forward Current
Forward Current vs Forward Voltage
9
160
8
140
Dominant Wavelength Shift (nm)
7
Forward Current (mA)
120
100
80
60
40
6
5
4
3
2
1
0
20
470nm
527nm
-1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-2
0
Forward Voltage (V)
20
40
60
80
100
120
140
160
Forward Current (mA)
Relative Intensity vs Forward Current
140
120
% Intensity
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Forward Current (mA)
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and XBright are registered trademarks, and XB and XB500 are trademarks of Cree, Inc.
CPR3CS Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
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