Siemens C67047-A2251-A2 Fred diode (fast recovery epitaxial diode soft recovery characteristics) Datasheet

BYP 301
FRED Diode
• Fast recovery epitaxial diode
• Soft recovery characteristics
Type
VRRM
IFRMS
trr
Package
Ordering Code
BYP 301
1200V
20A
80ns
TO-218 AD
C67047-A2251-A2
Maximum Ratings
Parameter
Symbol
Mean forward current
IFAV
TC = 90 °C, D = 0.5
Values
A
12
RMS forward current
IFRMS
Surge forward current, sine halfwave, aperiodic
IFSM
Tj = 100 °C, f = 50 Hz
20
50
IFRM
Repetitive peak forward current
Tj = 100 °C, tp ≤ 10 µs
110
∫i2dt
i 2t value
Tj = 100 °C, tp = 10 ms
A2s
13
Repetitive peak reverse voltage
VRRM
1200
Surge peak reverse voltage
VRSM
1200
Power dissipation
Ptot
TC = 90 °C
V
W
40
Chip or operating temperature
Tj
-40 ... + 150
Storage temperature
Tstg
-40 ... + 150
Thermal resistance, chip case
RthJC
≤ 1.5
Thermal resistance, chip-ambient
RthJA
≤ 46
DIN humidity category, DIN 40 040
-
E
IEC climatic category, DIN IEC 68-1
-
Semiconductor Group
Unit
1
°C
K/W
-
40 / 150 / 56
12.96
BYP 301
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Forward voltage drop
VF
V
IF = 12 A, Tj = 25 °C
-
2.2
2.75
IF = 12 A, Tj = 100 °C
-
1.8
-
Reverse current
IR
mA
VR = 1200 V, Tj = 25 °C
-
0.01
0.25
VR = 1200 V, Tj = 100 °C
-
0.05
-
VR = 1200 V, Tj = 150 °C
-
0.15
-
AC Characteristics
Reverse recovery charge
Qrr
µC
IF = 12 A, VCC = 500 V, diF/dt = -1000 A/µs
Tj = 100 °C
Peak reverse recovery current
-
2.2
-
IRRM
A
IF = 12 A, VCC = 500 V, diF/dt = -1000 A/µs
Tj = 100 °C
Reverse recovery time
-
35
-
trr
ns
IF = 12 A, VCC = 500 V, diF/dt = -1000 A/µs
Tj = 100 °C
Storage time
-
80
-
-
45
-
tS
IF = 12 A, VCC = 500 V, diF/dt = -1000 A/µs
Tj = 100 °C
Softfaktor
S
-
IF = 12 A, VCC = 500 V, diF/dt = -1000 A/µs
Tj = 100 °C
Semiconductor Group
-
2
0.8
-
12.96
BYP 301
Typ. forward characteristics
Typ. reverse current
IF = f (VF)
IRRM = f (diF / dt)
parameter: Tj
parameter: VCC = 500 V,IF = 12 A, Tj = 100 °C
10 2
50
A
25°C
A
Tj=100°C
IF
IRRM
40
35
10 1
30
25
20
10 0
15
10
5
10
-1
0
1
2
3
4
5
6
V
VF
0
1
10
8
10
2
10
3
A/us
diF/dt
Typ. reverse recovery charge
Qrr = f (diF / dt)
parameter: VCC = 500 V,IF = 12 A, Tj = 100 °C
3.0
uC
2.6
Qrr
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
10
10
Semiconductor Group
2
10
3
A/us
diF/dt
3
12.96
Similar pages