SIMOPAC® Module BSM 151 VDS = 500 V ID = 48 A R DS(on) = 0.12 Ω ● ● ● ● ● ● Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type Ordering Code BSM 151 C67076-A1004-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 500 V Drain-gate voltage, RGS = 20 kΩ VDGR 500 Gate-source voltage VGS ± 20 Continuous drain current, TC = 25 ˚C ID 48 Pulsed drain current, TC = 25 ˚C ID puls 192 Operating and storage temperature range Tj, Tstg – 55 … + 150 ˚C Power dissipation, TC = 25 ˚C Ptot 625 W Thermal resistance Chip-case Rth JC ≤ 0.20 Insulation test voltage2), t = 1 min. Vis 2500 Vac Creepage distance, drain-source – 16 mm Clearance, drain-source – 11 DIN humidity category, DIN 40 040 – F IEC climatic category, DIN IEC 68-1 – 55/150/56 1) 2) A K/W – See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 44 03.96 BSM 151 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA V(BR)DSS Gate threshold voltage VDS = VGS, ID = 1 mA VGS(th) Zero gate voltage drain current VDS = 500 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C I DSS Gate-source leakage current VGS = 20 V, VDS = 0 IGSS Drain-source on-state resistance VGS = 10 V, ID = 30 A RDS(on) V 500 – – 2.1 3.0 4.0 µA – – 50 300 250 1000 – 10 100 nA Ω – 0.1 0.12 Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max., ID = 30 A gfs 30 45 – S Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss – 8 11 nF Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss – 1.2 1.7 Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss – 0.5 0.7 Turn-on time ton (ton = td (on) + tr) VCC = 250 V, VGS = 10 V ID = 30 A, RGS = 3.3 Ω td (on) – 36 – tr – 25 – Turn-off time toff (toff = td (off) + tf) VCC = 250 V, VGS = 10 V ID = 30 A, RGS = 3.3 Ω td (off) – 260 – tf – 50 – Semiconductor Group 45 ns BSM 151 Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. Reverse diode Continuous reverse drain current TC = 25 ˚C IS Pulsed reverse drain current TC = 25 ˚C ISM Diode forward on-voltage IF = 96 A , VGS = 0 VSD Semiconductor Group 46 A – – 48 – – 192 – 1.1 1.4 V BSM 151 Characteristics at Tj = 25 ˚C, unless otherwise specified. Power dissipation Ptot = f (TC) parameter: Tj = 150 ˚C Typ. output characteristics ID = f (VDS) parameter: tp = 80 µs Typ. transfer characteristic ID = f (VGS) parameter: tp = 80 µs, VDS = 25 V Drain current ID = f (TC) parameter: VGS ≥ 10 V, Tj = 150 ˚C Semiconductor Group 47 BSM 151 Drain-source breakdown voltage V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚C) Drain source on-resistance RDS (on) = f (Tj) parameter: ID = 30 A; VGS = 10 V, (spread) Typ. capacitances C= f (VDS) parameter: VGS = 0, f = 1 MHz Forward characteristics of reverse diode IF = f (VSD), parameter: Tj, tp = 80 µs (spread) Semiconductor Group 48 BSM 151 Typ. gate charge VGS = f (QGate) parameter: IDpuls = 63 A Safe operating area ID = f (VDS) parameter: single pulse, TC = 25 ˚C, Tj ≤ 150 ˚C Semiconductor Group 49