BSM 75 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC BSM 75 GAL 120 DN2 1200V 105A Package Ordering Code HALF BRIDGE GAL 1 C67076-A2011-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 105 TC = 80 °C 75 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 210 TC = 80 °C 150 Ptot Power dissipation per IGBT TC = 25 °C W 625 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.2 Diode thermal resistance, chip case RthJCD ≤ 0.5 Diode thermal resistance, chip-case,chopper RTHJCDC ≤ 0.36 Insulation test voltage, t = 1min. Vis Creepage distance + 150 °C -55 ... + 150 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 - 55 / 150 / 56 Mar-29-1996 BSM 75 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 2 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 75 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 75 A, Tj = 125 °C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 1 1.4 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 4 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 320 AC Characteristics Transconductance gfs VCE = 20 V, IC = 75 A Input capacitance 31 nF - 5.5 - - 0.8 - - 0.3 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Mar-29-1996 BSM 75 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 75 A RGon = 15 Ω Rise time - 30 60 - 70 140 - 450 600 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 75 A RGon = 15 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 75 A RGoff = 15 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 75 A RGoff = 15 Ω Free-Wheel Diode Diode forward voltage VF V IF = 75 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 75 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time trr µs IF = 75 A, VR = -600 V, VGE = 0 V diF/dt = -900 A/µs, Tj = 125 °C Reverse recovery charge - 0.125 - Qrr µC IF = 75 A, VR = -600 V, VGE = 0 V diF/dt = -900 A/µs Tj = 25 °C - 3.2 - Tj = 125 °C - 12 - Semiconductor Group 3 Mar-29-1996 BSM 75 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Chopper Diode Chopper diode forward voltage VFC V IFC = 100 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IFC = 100 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time, chopper trrC µs IFC = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/µs, Tj = 125 °C Reverse recovery charge, chopper - 0.125 - QrrC µC IFC = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/µs Tj = 25 °C - 4 - Tj = 125 °C - 14 - Semiconductor Group 4 Mar-29-1996 BSM 75 GAL 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g