BSM 100 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC BSM 100 GAL 120 DN2 1200V 150A Package Ordering Code HALF BRIDGE GAL 2 C67076-A2012-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 150 TC = 80 °C 100 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 300 TC = 80 °C 200 Ptot Power dissipation per IGBT TC = 25 °C W 800 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.16 Diode thermal resistance, chip case RthJCD ≤ 0.3 Diode thermal resistance, chip-case,chopper RTHJCDC ≤ 0.25 Insulation test voltage, t = 1min. Vis Creepage distance + 150 °C -55 ... + 150 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 - 55 / 150 / 56 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 4 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 100 A, Tj = 25 °C - 3.1 3.7 VGE = 15 V, IC = 100 A, Tj = 125 °C - 2.5 3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 1.5 2 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 6 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 200 AC Characteristics Transconductance gfs VCE = 20 V, IC = 100 A Input capacitance 54 nF - 6.5 - - 1 - - 0.5 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Ω Rise time - 130 260 - 80 160 - 400 600 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Ω Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Ω Fall time tf VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Ω Free-Wheel Diode Diode forward voltage VF V IF = 100 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IF = 100 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time trr µs IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/µs, Tj = 125 °C Reverse recovery charge - 0.3 - Qrr µC IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/µs Tj = 25 °C - 4 - Tj = 125 °C - 14 - Semiconductor Group 3 Mar-29-1996 BSM 100 GAL 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Chopper Diode Chopper diode forward voltage VFC V IFC = 150 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8 IFC = 150 A, VGE = 0 V, Tj = 125 °C - 1.8 - Reverse recovery time, chopper trrC µs IFC = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs, Tj = 125 °C Reverse recovery charge, chopper - 0.4 - QrrC µC IFC = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/µs Tj = 25 °C - 5 - Tj = 125 °C - 18 - Semiconductor Group 4 Mar-29-1996 BSM 100 GAL 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g