CA3039 Diode Array November 1996 Features Description • Six Matched Diodes on a Common Substrate The CA3039 consists of six ultra-fast, low capacitance diodes on a common monolithic substrate. Integrated circuit construction assures excellent static and dynamic matching of the diodes, making the array extremely useful for a wide variety of applications in communication and switching systems. • Excellent Reverse Recovery Time . . . . . . . . . 1ns (Typ) • VF Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mV (Max) • Low Capacitance . . . . . . CD = 0.65pF (Typ) at VR = -2V Five of the diodes are independently accessible, the sixth shares a common terminal with the substrate. Applications • Ultra-Fast Low Capacitance Matched Diodes for Applications in Communications and Switching Systems • Balanced Modulators or Demodulators • Ring Modulators For applications such as balanced modulators or ring modulators where capacitive balance is important, the substrate should be returned to a DC potential which is significantly more negative (with respect to the active diodes) than the peak signal applied. Ordering Information • High Speed Diode Gates • Analog Switches PART NUMBER TEMP. RANGE (oC) PACKAGE -55 to 125 12 Pin Metal Can T12.B CA3039 PKG. NO. CA3039M -55 to 125 14 Ld SOIC M14.15 CA3039M96 -55 to 125 14 Ld SOIC Tape and Reel M14.15 Pinouts CA3039 (SOIC) TOP VIEW 1 D4 DS D6 NC 6 7 2 D1 3 D2 D6 D3 D2 4 10 D1 9 DS 8 5 9 NC 10 D5 D4 12 11 D3 11 1 13 SUBSTRATE 4 5 12 14 D5 2 3 CA3039 (METAL CAN) TOP VIEW 7 6 8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 7-18 File Number 343.3 CA3039 Absolute Maximum Ratings Thermal Information Inverse Voltage (PIV) for: D1 - D5 . . . . . . . . . . . . . . . . . . . . . . . . 5V D6 . . . . . . . . . . . . . . . . . . . . . . . 0.5V Diode-to-Substrate Voltage (VDI) for D1 - D5 . . . . . . . . . . . .20V, -1V (Terminal 1, 4, 5, 8 or 12 to Terminal 10) DC Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Recurrent Forward Current (IF) . . . . . . . . . . . . . . . . . . . . . . . 100mA Forward Surge Current (IF(SURGE)). . . . . . . . . . . . . . . . . . . . 100mA Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W) Metal Can Package . . . . . . . . . . . . . . . 200 120 SOIC Package . . . . . . . . . . . . . . . . . . . 220 N/A Maximum Power Dissipation (Any One Diode) . . . . . . . . . . . 100mW Maximum Junction Temperature (Metal Can Package) . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25oC; Characteristics apply for each diode unit, Unless Otherwise Specified PARAMETER DC Forward Voltage Drop (Figure 1) SYMBOL TEST CONDITIONS VF MIN TYP MAX UNITS IF = 50µA - 0.65 0.69 V IF = 1mA - 0.73 0.78 V IF = 3mA - 0.76 0.80 V IF = 10mA - 0.81 0.90 V DC Reverse Breakdown Voltage V(BR)R IR = -10µA 5 7 - V DC Reverse Breakdown Voltage Between Any Diode Unit and Substrate V(BR)R IR = -10µA 20 - - V DC Reverse (Leakage) Current (Figure 2) IR VR = -4V - 0.016 100 nA DC Reverse (Leakage) Current Between Any Diode Unit and Substrate (Figure 3) IR VR = -10V - 0.022 100 nA V F1 – V F2 IF = 1mA - 0.5 5.0 mV ∆ V F1 – V F2 ---------------------------------∆T IF = 1mA - 1.0 - µV/oC ∆V F ----------∆T IF = 1mA - -1.9 - mV/oC DC Forward Voltage Drop for Anode-toSubstrate Diode (DS) VF IF = 1mA - 0.65 - V Reverse Recovery Time tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6) RD f = 1kHz, IF = 1mA 25 30 45 Ω Diode Capacitance (Figure 7) CD VR = -2V, IF = 0 - 0.65 - pF Diode-to-Substrate Capacitance (Figure 8) CDI VDI = 4V, IF = 0 - 3.2 - pF Magnitude of Diode Offset Voltage (Note 2) (Figure 1) Temperature Coefficient of |VF1 - VF2| (Figure 4) Temperature Coefficient of Forward Drop (Figure 5) NOTE: 2. Magnitude of Diode Offset Voltage is the difference in DC Forward Voltage Drops of any two diode units. 7-19 CA3039 Typical Performance Curves 10 TA = 25oC VR = -4V 0.7 4 3 0.6 2 DIODE OFFSET ( V F1 – V F2 ) 0.5 0.01 1 0.1 1 DC FORWARD CURRENT (mA) 10 DIODE OFFSET VOLTAGE (mV) DC FORWARD VOLTAGE (V) 5 FORWARD VOLTAGE DROP (VF) DC REVERSE CURRENT (nA) 6 0.8 1 0.1 0.01 -25 0 25 50 TEMPERATURE (oC) -50 -25 0 25 50 75 75 100 125 FIGURE 3. DC REVERSE (LEAKAGE) CURRENT BETWEEN D1, D2, D3, D4, D5 AND SUBSTRATE vs TEMPERATURE 125 4 IF = 10mA 3 2 0.7 0.6 IF = 1mA 0.5 IF = 0.1mA 0.4 0.3 -75 -50 -25 0 25 50 TEMPERATURE (oC) 75 DIODE RESISTANCE (Ω) 0.7 0.6 125 TA = 25oC f = 1kHz 0.9 0.8 100 FIGURE 4. DIODE OFFSET VOLTAGE (ANY DIODE) vs TEMPERATURE 1000 IF = 1mA DC FORWARD VOLTAGE (V) 100 FIGURE 2. DC REVERSE (LEAKAGE) CURRENT (D1 - D5) vs TEMPERATURE DIODE OFFSET VOLTAGE ( V F1 – V F2 ) (mV) DC REVERSE CURRENT (nA) 10 -50 0.01 TEMPERATURE (oC) VR = -10V 0.001 -75 0.1 0.001 -75 0 FIGURE 1. DC FORWARD VOLTAGE DROP (ANY DIODE) AND DIODE OFFSET VOLTAGE vs DC FORWARD CURRENT 100 1 100 10 0.5 0.4 -75 -50 -25 0 25 50 75 100 125 TEMPERATURE (oC) FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE) vs TEMPERATURE 1 0.01 0.1 1 DC FORWARD CURRENT (mA) FIGURE 6. DIODE RESISTANCE (ANY DIODE) vs DC FORWARD CURRENT 7-20 10 CA3039 DIODE CAPACITANCE (pF) 6 (Continued) DIODE TO SUBSTRATE CAPACITANCE (pF) Typical Performance Curves TA = 25oC IF = 0 5 4 3 2 1 0 1 2 3 4 6 TA = 25oC IF = 0 5 4 3 2 1 0 0 1 2 3 4 DC REVERSE VOLTAGE BETWEEN TERMINALS 1, 4, 5, 8, OR 12 AND SUBSTRATE (TERMINAL 10) (V) DC REVERSE VOLTAGE ACROSS DIODE (V) FIGURE 7. DIODE CAPACITANCE (D1 - D5) vs REVERSE VOLTAGE FIGURE 8. DIODE-TO-SUBSTRATE CAPACITANCE vs REVERSE VOLTAGE All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. 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