• 1N5518B THRU 1N5546B AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/437 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5518B THRU 1N5546B • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW CD5518B thru CD5546B 23 MILS 15 MILS MAXIMUM RATINGS 23 MILS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Forward Voltage @ 200 mA: 1.5 Volts Maximum JEDEC TYPE NUMBER NOMINAL ZENER VOLTAGE MAX. ZENER IMPEDANCE TEST VZ @ lZT VOLTS CURRENT lZT ZZT @ lZT OHMS (Note 1) mAdc (Note 2) CD5518B CD5519B CD5520B CD5521B CD5522B 3.3 3.6 3.9 4.3 4.7 CD5523B CD5524B CD5525B CD5526B CD5527B 5.1 5.6 6.2 6.8 7.5 CD5528B CD5529B CD5530B CD5531B CD5532B 20 20 20 20 10 MAX. REVERSE LEAKAGE CURRENT lR REGULATION FACTOR LOW VZ VR ∆VZ VOLTS CURRENT VOLTS (Note 3) µ Adc 15 MILS ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified lZL mAdc 26 24 22 18 22 5.0 3.0 1.0 3.0 2.0 1.0 1.0 1.0 1.5 2.0 0.90 0.90 0.90 0.75 0.60 2.0 2.0 2.0 2.0 1.0 5.0 3.0 1.0 1.0 1.0 26 30 30 30 35 2.0 2.0 1.0 1.0 0.5 2.5 3.5 5.0 6.2 6.8 0.65 0.30 0.20 0.10 0.05 0.25 0.25 0.01 0.01 0.01 8.2 9.1 10.0 11.0 12.0 1.0 1.0 1.0 1.0 1.0 40 45 60 80 90 0.5 0.1 0.05 0.05 0.05 7.5 8.2 9.1 9.9 10.8 0.05 0.05 0.10 0.20 0.20 0.01 0.01 0.01 0.01 0.01 CD5533B CD5534B CD5535B CD5536B CD5537B 13.0 14.0 15.0 16.0 17.0 1.0 1.0 1.0 1.0 1.0 90 100 100 100 100 0.01 0.01 0.01 0.01 0.01 11.7 12.6 13.5 14.4 15.3 0.20 0.20 0.20 0.20 0.20 0.01 0.01 0.01 0.01 0.10 CD5538B CD5539B CD5540B CD5541B CD5542B 18.0 19.0 20.0 22.0 24.0 1.0 1.0 1.0 1.0 1.0 100 100 100 100 100 0.01 0.01 0.01 0.01 0.01 16.2 17.1 18.0 19.8 21.6 0.20 0.20 0.20 0.25 0.30 0.01 0.01 0.01 0.01 0.01 GOLD THICKNESS... .....4,000 Å Min CD5543B CD5544B CD5545B CD5546B 25.0 28.0 30.0 33.0 1.0 1.0 1.0 1.0 100 100 100 100 0.01 0.01 0.01 0.01 22.4 25.2 27.0 29.7 0.35 0.40 0.45 0.50 0.01 0.01 0.01 0.01 CIRCUIT LAYOUT DATA: For Zener operation, cathode must be operated positive with respect to anode. NOTE 1 Suffix “B” voltage range equals nominal Zener voltage + 5%. Suffix “A” equals + 10%. No Suffix equals + 20%. Zener voltage is read using a pulse measurement, 10 milliseconds maximum. "C" suffix = + 2% and "D" suffix = +1%. NOTE 2 Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to 10% of lZT. BACKSIDE IS CATHODE DESIGN DATA METALLIZATION: Top: (Anode)................ ......Al Back: (Cathode)............ ...Au AL THICKNESS............25,000 Å Min CHIP THICKNESS.............. ....10 Mils TOLERANCES: ALL Dimensions + 2 mils, Except Anode Pad Where Tolerance is + 0.1 mils. NOTE 3 ∆VZ is the maximum difference between VZ @ 1ZT and VZ at 1ZL measured with the device junction in thermal equilibrium at an ambient temperature of +25° + 3°C. 22 COREY STREET, MELROSE, MASSACHUSETTS 02176 PHONE (781) 665-1071 FAX (781) 665-7379 WEBSITE: http://www.cdi-diodes.com E-mail: [email protected] CD5518B thru CD5546B 1000 500 400 300 3. 3 VO LT 27 100 VO LT 1 5. LT VO ZENER IMPEDANCE ZZT (OHMS) 200 50 40 30 11 20 VO LT 10 6.2 VO LT 5 4 3 2 1 .1 .2 .3 .4 .5 1 2 5 10 20 OPERATING CURRENT lZT (mA) 30 40 50 100 FIGURE 3 ZENER IMPEDANCE VS. OPERATING CURRENT