SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw CDBN0145 Io = 100mA V R = 45 Volt s Features Designed for mounting on small surface 1206 (3216) Extremely thin package Low stored charge 0.126(3.20) 0.118(3.00) Majority carrier conduction Mechanical data 0.010(R0.25) Typ. 0.020(0.50) Typ. 0.063(1.60) 0.055(1.40) Case: 1206(3216)Standard package, molded plastic Terminals: Solder plated, solderable per MIL-STD-750, method 2026. 0.043 (1.10) 0.035(0.90) Polarity: Indicated by cathode band. Mounting position: Any. Dimensions in inches and (millimeter) Weight: 0.0085 gram. (approximately) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Conditions Repetitive peak reverse voltage Symbol Min Typ Max Unit V RRM 50 V Reverse voltage VR 45 V Average forward current Io 100 mA Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Power Dissipation mA 1000 I FSM PD 250 mW Storage temperature T STG -40 +125 C Junction temperature Tj -40 +125 C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Conditions Parameter Symbol Min Typ Max Unit Forward voltage I F = 100 mA DC VF 0.55 Reverse current V R = 45 V IR 30 Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage CT RDS0208012-C 10 V uA pF Page 1 SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CDBN0145) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m Reverse current ( A ) 100 -25 C C 75 12 25 C 10 5C Forward current (mA ) 1000 0.3 0.4 1 0 0.1 0.2 125 C 100u 75 C 10u 25 C 1u 100n 0.5 0.6 0 10 Forward voltage (V) 30 40 50 Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Fig. 4 - Current derating curve 20 Average forward current ( % ) Capacitance between terminals (pF) 20 f = 1 MHz Ta = 25 C 10 Mounting on glass epoxy PCBs 100 80 60 40 20 0 1 0 5 10 15 20 25 Reverse voltage (V) RDS0208012-C 30 35 0 25 50 75 100 125 150 Ambient temperature ( C ) Page 2