COMCHIP SMD Schottky Barrier Diode SMD Diodes Specialist CDBS0130 Io = 100mA V R = 30 Volt s Features Designed for mounting on small surface Extremely thin package 0805 (2012) Low stored charge Majority carrier conduction 0.087(2.20) 0.079(2.00) Mechanical data 0.008(R0.20)Typ. 0.016(0.40) Typ. 0.055(1.40) 0.047(1.20) Case: 0805(2012) Standard package, molded plastic Terminals: Solder plated, solderable per MIL-STD-750, method 2026 0.043(1.10) 0.035(0.90) Polarity: Indicated by cathode band Mounting position: Any Dimensions in inches and (millimeter) Weight: 0.0048 gram (approximately) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Conditions Repetitive peak reverse voltage Symbol Min Typ Max Unit V RRM 35 V Reverse voltage VR 30 V Average forward current Io 100 mA Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) 250 PD Power Dissipation mA 1000 I FSM Storage temperature T STG -40 +125 Junction temperature Tj -40 +125 mW C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Conditions Parameter Symbol Min Typ Max Unit Forward voltage I F = 100 mA DC VF 0.44 Reverse current V R = 30 V IR 30 Capacitance between terminals f = 1MHz, and 10 VDC reverse voltage CT 10 V uA pF REV:A QW-A1010 Page 1 COMCHIP SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBS0130) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m Reverse current ( A ) 100 125 C 100u 75 C 10u 25 C 1u 25 C -25 C 75 C 5C 10 12 Forward current (mA ) 1000 1 100n 0 0.1 0.3 0.2 0.4 0.5 0.6 0 10 Forward voltage (V) 30 40 50 Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics Fig. 4 - Current derating curve 20 Average forward current ( % ) Capacitance between terminals (pF) 20 f = 1 MHz Ta = 25 C 10 Mounting on glass epoxy PCBs 100 80 60 40 20 0 1 0 5 10 15 20 25 Reverse voltage (V) 30 35 0 25 50 75 100 125 150 Ambient temperature ( C ) REV:A QW-A1010 Page 2