SMD Schottky Barrier Diode Arrays SMD Diodes Specialist CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOD-363 -Low forward voltage drop. -Fast switching. -Ultra-small surface mount package. -PN junction guard ring for transient and ESD protection. -Available in lead Free version. 0.087(2.20) 0.071(1.80) 0.053(1.35) 0.045(1.15) Mechanical data -Case: SOD-323, Molded Plastic -Case material: UL 94V-0 flammability retardant classification. -Terminals: Solderable per MIL-STD-202, Method 208 -Marking: Orientation: See diagrams below -Weight: 0.006 grams (approx.) -Marking: See diagrams below A1 C2 C2 C1 A2 A2 AC C2 0.014(0.35) 0.006(0.15) C1 A2 A1 A1 C2 A1 0.096(2.45) 0.085(2.15) 0.004(0.10)max 0.010(0.25)min Dimensions in inches and (millimeters) A2 1 C1 AC C1 C2 C1 C2 C3 A2 AC A1 A2 A3 1 C1 AC A1 2 CDBV6-54AD-G* Marking: KL6 CDBV6-54CD-G* Marking: KL7 0.006(0.15) 0.003(0.08) 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) CDBV6-54SD-G* Marking: KL8 2 CDBV6-54BR-G Marking: KLB CDBV6-54T-G Marking: KLA *Symmetrical configuration, no orientation indicator. Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Symbol Limits Unit V RRM V RWM VR 30 V Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage IF 200 mA Repetitive peak forward current (Note 1) Forward continuous current (Note 1) I FRM 300 mA Forward surge current (Note 1) I FSM 600 mA PD 200 mW RθJA 625 T J , T STG -65 ~ +125 @t<1.0s Power dissipation (Note 1) Thermal resistance, junction to ambient air (Note 1) Operation and storage temperature range O C/W O C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Reverse breakdown voltage (Note 2) I R =100μA Forward voltage I F =0.1mA I F =1mA I F =10mA I F =30mA I F =100mA Symbol Min Typ Max Unit V (BR)R VF 30 V 240 320 400 500 1000 mV μA Reverse leakage current (Note 2) V R =25V IR 2 Total capacitance V R =1.0V, f=1.0MHz CT 10 pF Reverse recovery time I F =I R =10mA to I R =1.0mA, R L =100Ω trr 5 nS Notes: 1. Device mounted on FR-4 PCB, 1×0.85×0.062 inch. 2. Short duration test pulse used to minimize self-heating effect. REV:A QW-BA015 Page 1 SMD Schottky Barrier Diode Arrays SMD Diodes Specialist ELECTRICAL CHARACTERISTIC CURVES (CDBV6-54T/AD/CD/SD/BR-G) =1 25 CO 100m 10m O T A =75 C T A =25 OC T A =0 OC O T A =-40 C 1m 0.1m 0 0.2 0.4 0.8 0.6 1.0 I R , Instantaneous Reverse Current (μA) Fig.2 Reverse Characteristics 1 TA I F , Instantaneous Forward Current (A) Fig.1 Forward Characteristics 100 O 125 C 10 O 75 C 1 0.1 O 25 C 0.01 O 0 C 0.001 20 30 V R , Instantaneous Reverse Voltage (V) Fig.3 Capacitance Between Terminals Characteristics Fig.4 Power Derating Curve 100 f=1MHz P D , Power Dissipation (mW) C T , Capacitance Between Terminals (pF) 10 0 V F , Instantaneous Forward Voltage (V) 10 1 200 100 0 0 5 10 15 20 25 V R , Reverse Voltage (V) 30 0 24 50 75 100 125 150 T A , Ambient Temperature ( OC) REV:A QW-BA015 Page 2