SMD Schottky Barrier Diode Arrays CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 -Low forward voltage drop. -Fast switching. -Ultra-small surface mount package. -PN junction guard ring for transient and ESD protection. -Available in lead Free version. 0.087(2.20) 0.071(1.80) 0.053(1.35) 0.045(1.15) Mechanical data -Case: SOT-363, Molded Plastic -Case material: UL 94V-0 flammability retardant classification. -Terminals: Solderable per MIL-STD-202, Method 208 -Marking: Orientation: See diagrams below -Weight: 0.006 grams (approx.) -Marking: See diagrams below A1 C2 C2 C1 A2 A2 AC 0.014(0.35) 0.006(0.15) C1 A2 A1 A1 C2 A1 0.096(2.45) 0.085(2.15) 0.004(0.10)max 0.010(0.25)min C2 A2 AC C1 C2 C1 C2 C3 A2 AC A1 A2 A3 1 C1 AC A1 2 CDBV6-54AD-G* Marking: KL6 CDBV6-54CD-G* Marking: KL7 0.006(0.15) 0.003(0.08) Dimensions in inches and (millimeters) 1 C1 0.056(1.40) 0.047(1.20) 0.044(1.10) 0.035(0.90) CDBV6-54SD-G* Marking: KL8 2 CDBV6-54BR-G Marking: KLB CDBV6-54T-G Marking: KLA *Symmetrical configuration, no orientation indicator. Maximum Ratings (at Ta=25°C unless otherwise noted) Parameter Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Forward continuous current (Note 1) Repetitive peak forward current (Note 1) Forward surge current (Note 1) @t<1.0s Power dissipation (Note 1) Thermal resistance, junction to ambient air (Note 1) Operation and storage temperature range Symbol Limits Unit VRRM VRWM VR 30 V IF 200 mA IFRM 300 mA IFSM 600 mA PD 200 mW RθJA 625 TJ, TSTG -65 ~ +125 O C/W O C Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Conditions Reverse breakdown voltage (Note 2) IR=100μA Forward voltage IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA Symbol Min Typ Max Unit V(BR)R VF 30 V 240 320 400 500 1000 mV μA Reverse leakage current (Note 2) VR=25V IR 2 Total capacitance VR=1.0V, f=1.0MHz CT 10 pF Reverse recovery time IF=IR=10mA to IR=1.0mA, RL=100Ω trr 5 nS Notes: 1. Device mounted on FR-4 PCB, 1×0.85×0.062 inch. 2. Short duration test pulse used to minimize self-heating effect. REV:A QW-BA015 Page 1 SMD Schottky Barrier Diode Arrays ELECTRICAL CHARACTERISTIC CURVES ( CDBV6-54T/AD/CD/SD/BR-G) Fig.1 Forward Characteristics Fig.2 Reverse Characteristics 100 10m O TA=75 C TA=25 OC TA=0 OC O TA=-40 C 1m 0.1m 0 0.2 0.4 0.8 0.6 1.0 IR, Instantaneous Reverse Current (μA) =1 25 CO 100m TA IF, Instantaneous Forward Current (A) 1 O 125 C 10 O 75 C 1 0.1 O 25 C 0.01 O 0 C 0.001 10 0 20 30 VR, Instantaneous Reverse Voltage (V) VF, Instantaneous Forward Voltage (V) Fig.3 Capacitance Between Terminals Characteristics Fig.4 Power Derating Curve f=1MHz PD, Power Dissipation (mW) CT, Capacitance Between Terminals (pF) 100 10 1 200 100 0 0 5 10 15 20 VR, Reverse Voltage (V) 25 30 0 24 50 75 100 125 150 TA, Ambient Temperature (°C) REV:A QW-BA015 Page 2