Bourns CDDFN10-0524P Surface mount tvs diode array Datasheet

PL
IA
NT
CO
M
*R
oH
S
Features
Applications
■ RoHS compliant*
■ HDMI 1.4
■ Low capacitance - 0.5 pF
■ Digital Visual Interface (DVI)
■ ESD protection >15 kV
■ USB 3.0 / USB OTG
■ Memory protection
■ SIM card ports
CDDFN10-0524P - Surface Mount TVS Diode Array
General Information
The CDDFN10-0524P device provides ESD, EFT and Surge protection for highspeed data ports meeting IEC 61000-4-2 (ESD) requirements. The Transient Voltage
Suppressor array, protecting up to 4 data lines, offers a Working Peak Reverse Voltage
of 5 V and Minimum Breakdown Voltage of 6 V.
Pin
1
Pin
2
Pin
4
Pin
5
The DFN10 packaged device will mount directly onto the industry standard DFN10
footprint. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with
standard pick and place equipment and their flat configuration minimizes roll away.
Pins
3, 8
Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Peak Pulse Power (tp = 8/20 μS)
Peak Pulse Current (tp = 8/20 μS)
Operating Voltage (I/O pin - GND)
Storage Temperature
Operating Temperature
Symbol
Ppp
Ipp
VDC
TSTG
TOPR
CDDFN10-0524P
30
3.8
6
-55 to +150
-55 to +85
Unit
W
A
V
ºC
ºC
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Breakdown Voltage @ 1 mA
Reverse Standoff Voltage
Forward Voltage If =15 mA
(Gnd to I/O Pin)
Channel Leakage Current
VRWM = 5 V, (I/O Pin to Gnd)
Clamping Voltage
IEC 61000-4-2 +6 kV,
Contact mode (I/O Pin to Gnd)
Channel Input Capacitance
Vpin3,8=0 V, Vin=2.5 V, f=1 MHZ
(I/O Pin to Gnd)
Channel to Channel Input Capacitance
Vpin3,8=0 V, Vin=2.5 V, f=1 MHZ
(Between I/O pins)
ESD Protection per IEC 6-1000-4-2
Contact Discharge
Air Discharge
ESD Dynamic Turn-on Resistance
(any I/O Pin to Gnd)
EFT Protection per IEC 61000-4-4
@ 5/50 ns
Surge Protection per IEC 61000-4-5
@ 8/20 μs
Symbol
VBR
VRWM
Min.
6
VF
Typ.
0.9
ID
Max.
5
Unit
V
V
1.1
V
1.5
μA
VC
12
CIN
0.5
0.65
pF
CCROSS
0.04
0.08
pF
10
15
kV
8
15
Rdynamic
V
Ω
0.3
40
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
A
3.8
A
CDDFN10-0524P - Surface Mount TVS Diode Array
Product Dimensions
Recommended Footprint
This is a molded DFN10 package with lead free 100 % Matte sn on
the lead frame. It weighs approximately 7 mg and has a flammability
rating of UL 94V-0.
PIN 1
MARKING
0.4
(.016)
0.2
(.008)
1.000 ± 0.050
(.039 ± .002)
1.55
(.061)
0.20
(.008)
0.875
(.034)
2.500 ± 0.050
(.098 ± .002)
0.675
(.027)
0.400 ± 0.050
(.016 ± .002)
0.500
BSC
(.020)
0.50
(.020)
PIN 1
IDENTIFICATION
CHAMFER
0.100
X 45 °
(.039)
1.00
(.039)
Typical Part Marking
0.100
R
(.039)
TYP.
CDDFN10-0524P ........................................................................524
1.950
(.077)
REF.
0.400 ± 0.050
(.016 ± .002)
0.05
(.002)
How to Order
0.250 ± 0.050
(.008 ± .002)
CD DFN10 - 05 24 P
Common Diode
Chip Diode
0.200 ± 0.050
(.008 ± .002)
Package
DFN10 = DFN-10 Package
Working Peak Reverse Voltage
05 = 5 VRWM (Volts)
0.50 - 0.60
(0.020 - 0.024)
Number of Lines
24 = 2 Ground / 4 Data Lines
Suffix
P = Ultra-low Capacitance
0.152
(.006)
REF.
0.000 - 0.050
(.000 - .002)
DIMENSIONS:
MM
(INCHES)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CDDFN10-0524P - Surface Mount TVS Diode Array
Rating & Characteristic Curves
Typical Variation of CIO-to-IO vs VIN
1.0
0.10
0.9
0.09
0.8
0.08
Input Capacitance (pF)
Input Capacitance (pF)
Typical Variation CIN vs VIN
0.7
0.6
0.5
0.4
0.3
0.2
0.06
0.05
0.04
0.03
0.02
f = 1 MHz,
T = 25 °C
0.1
0.07
f = 1 MHz,
T = 25 °C
0.01
0.0
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
Input Voltage (V)
2.5
3.0
3.5
4.0
Analog Cross Talk
0
20
-3
10
-6
-9
-12
-15
-18
-21
-24
3 GHz: -0.92 dB
4.3 GHz: -3 dB
-27
-30
Analog Cross Talk (dB)
Insertion Loss (dB)
Insertion Loss S21 (I/O-to-GND)
1e+8
2.0
Input Voltage (V)
0
-10
-20
-30
-40
-50
-60
-70
-80
1e+9
1e+8
Frequency (Hz)
1e+9
Frequency (Hz)
Transmission Line Pulsing (TLP)
Data Lines Connection
Transmission Line Pulsing (TLP) Current (A)
I/O 1
To
I/O-Port
Connector
18
data line
I/O 1
data line
I/O 2
To
Protected
IC
16
V_pulse
14
Line-1
Pulse from a
transmission line
12
10
Line-2
TLP_V
8
1
10 NC
2
9
3
8
4
7
NC
5
6
NC
TLP_I
+
100 ns
-
GND
NC
GND
6
Line-3
4
I/O to GND
2
Line-4
0
0
2
4
6
8
10
12
14
Transmission Line Pulsing (TLP) Voltage (V)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
I/O 3
data line
I/O 3
To
I/O-Port
I/O 4
Connector
data line
I/O 4
To
Protected
IC
CDDFN10-0524P - Surface Mount TVS Diode Array
Packaging Information
The product is packaged in an 8 mm x 4 mm tape and reel format per EIA-481-A standard.
P
0
P
1
d
T
E
Index Hole
Pin 1
Location
120 °
F
D2
W
B
D1 D
P
A
Trailer
.......
.......
End
C
Device
.......
.......
Leader
.......
.......
.......
.......
W1
Start
DIMENSIONS:
10 pitches (min.)
MM
(INCHES)
10 pitches (min.)
Direction of Feed
Item
Symbol
DFN-10
Carrier Width
A
1.45 ± 0.05
(0.057 ± 0.002)
Carrier Length
B
2.95 ± 0.05
(0.116 ± 0.002)
Carrier Depth
C
0.90 ± 0.05
(0.035 ± 0.002)
Sprocket Hole
d
1.55 ± 0.05
(0.061 ± 0.002)
Reel Outside Diameter
D
178
(7.008)
Reel Inner Diameter
D1
50.0
MIN.
(1.969)
Feed Hole Diameter
D2
13.0 ± 0.20
(0.512 ± 0.008)
Sprocket Hole Position
E
1.75 ± 0.10
(0.069 ± 0.004)
Punch Hole Position
F
3.50 ± 0.05
(0.138 ± 0.002)
Punch Hole Pitch
P
4.00 ± 0.10
(0.157 ± 0.004)
Sprocket Hole Pitch
P0
4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center
P1
2.00 ± 0.05
(0.079 ± 0.002)
Overall Tape Thickness
T
0.20 ± 0.10
(0.008 ± 0.004)
Tape Width
W
8.00 ± 0.20
(0.315 ± 0.008)
Reel Width
W1
Quantity per Reel
--
Asia-Pacific:
Tel: +886-2 2562-4117
Fax: +886-2 2562-4116
Europe:
Tel: +41-41 768 5555
Fax: +41-41 768 5510
The Americas:
Tel: +1-951 781-5500
Fax: +1-951 781-5700
www.bourns.com
14.4
MAX.
(0.567)
3000
REV. 08/17/12
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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