CET CEF09N7A N-channel enhancement mode field effect transistor Datasheet

CEP09N7A/CEB09N7A
CEF09N7A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
VDSS
RDS(ON)
ID
@VGS
CEP09N7A
Type
700V
1.2Ω
8A
10V
CEB09N7A
700V
1.2Ω
8A
10V
CEF09N7A
700V
1.2Ω
8A e
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
S
S
CEF SERIES
TO-220F
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
Drain-Source Voltage
VDS
700
Gate-Source Voltage
VGS
±30
Drain Current-Continuous
Drain Current-Pulsed
ID
a
IDM
Maximum Power Dissipation @ TC = 25 C
8
f
PD
- Derate above 25 C
TO-220F
Units
V
V
8
e
e
A
A
30
30
167
50
W
1.33
0.4
W/ C
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
RθJC
0.75
2.5
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
Rev 1. 2006.Oct
http://www.cetsemi.com
Details are subject to change without notice .
1
CEP09N7A/CEB09N7A
CEF09N7A
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
700
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 700V, VGS = 0V
50
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
1.2
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forward Transconductance
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 5A
gFS
VDS = 5V, ID = 8A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
2
8
S
1800
pF
160
pF
17
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 300V, ID = 8A,
VGS = 10V, RGEN = 10Ω
20
40
ns
7
14
ns
38
76
ns
Turn-Off Fall Time
tf
7
14
ns
Total Gate Charge
Qg
32
42.5
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 480V, ID = 8A,
VGS = 10V
10
nC
9
nC
Drain-Source Diode Characteristics and Maximun Ratings
IS g
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
VSD
VGS = 0V, IS = 8A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 4.3A .
2
8
A
1.6
V
4
CEP09N7A/CEB09N7A
CEF09N7A
12
10
ID, Drain Current (A)
ID, Drain Current (A)
12
VGS=10,9,8,7V
8
VGS=6V
6
4
VGS=5V
2
10
8
6
4
25 C
2
TJ=125C
-55 C
0
0
0
3
6
9
12
1
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
6
Figure 2. Transfer Characteristics
1600
1200
800
Coss
400
Crss
0
0
5
10
15
20
25
3.0
2.5
ID=8A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
5
Figure 1. Output Characteristics
Ciss
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
4
VGS, Gate-to-Source Voltage (V)
2000
1.2
3
VDS, Drain-to-Source Voltage (V)
2400
1.3
2
-25
0
25
50
75
100
125
VGS=0V
10
10
1
0
10-1
0.4
150
0.7
1.0
1.3
1.7
2.0
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=480V
ID=8A
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP09N7A/CEB09N7A
CEF09N7A
6
4
2
0
0
8
16
24
10
100µs
1ms
1
10ms
DC
10
10
32
4
RDS(ON)Limit
0
TC=25 C
TJ=150 C
Single Pulse
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
10
0.2
0.1
-1
0.05
0.02
0.01
10
10
PDM
t1
Single Pulse
-2
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC= P* RθJC (t)
4. Duty Cycle, D=t1/t2
-3
10
-5
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
3
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