CET CEF80N75 N-channel enhancement mode field effect transistor Datasheet

CEP80N75/CEB80N75
CEF80N75
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
VDSS
RDS(ON)
ID
@VGS
CEP80N75
75V
13mΩ
80A
10V
CEB80N75
75V
13mΩ
80A
CEF80N75
75V
13mΩ
80A
10V
e
10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-220F full-pak for through hole.
G
D
G
D
S
G
S
CEB SERIES
TO-263(DD-PAK)
G
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS
Parameter
D
S
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed
S
CEF SERIES
TO-220F
ID
IDM
a
Maximum Power Dissipation @ TC = 25 C
f
PD
- Derate above 25 C
TO-220F
75
Units
V
±20
V
A
80
80
320
320
200
75
W
e
e
A
1.3
0.5
W/ C
Single Pulsed Avalanche Energy d
EAS
880
880
mJ
Single Pulsed Avalanche Current d
IAS
45
45
A
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
C
Symbol
Limit
Units
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
RθJC
0.75
2
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
65
C/W
Rev 2. 2007.Feb
http://www.cetsemi.com
Details are subject to change without notice .
1
CEP80N75/CEB80N75
CEF80N75
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
75
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 60V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
4
V
13
mΩ
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 40A
Forward Transconductance
gFS
VDS = 15V, ID = 40A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Static Drain-Source
On-Resistance
2
10
Dynamic Characteristics c
VDS = 25V, VGS = 0V,
f = 1.0 MHz
45
S
3550
pF
580
pF
40
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 37.5V, ID = 45A,
VGS = 10V, RGEN = 4.7Ω
24
48
ns
5
10
ns
61
122
ns
Turn-Off Fall Time
tf
18
36
ns
Total Gate Charge
Qg
79.3
105.5
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 60V, ID = 75A,
VGS = 10V
20.6
nC
25.9
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
IS g
b
VSD
VGS = 0V, IS = 75A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L =0.87mH, IAS =45A, VDD = 38V, RG = 25Ω, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 51A .
2
75
A
1.5
V
CEP80N75/CEB80N75
CEF80N75
120
VGS=10,9,8,7V
40
ID, Drain Current (A)
ID, Drain Current (A)
50
VGS=6V
30
20
VGS=5V
10
100
75
50
25 C
25
-55 C
TJ=125 C
0
0
0.5
1
1.5
0
2
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
3000
2000
Coss
1000
Crss
0
5
10
15
20
25
5
2.6
2.2
ID=40A
VGS=10V
1.8
1.4
1.0
0.6
0.2
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
4
Figure 2. Transfer Characteristics
Ciss
1.1
1.0
0.9
0.8
0.7
0.6
-50
3
Figure 1. Output Characteristics
4000
1.2
2
VGS, Gate-to-Source Voltage (V)
5000
1.3
1
VDS, Drain-to-Source Voltage (V)
6000
0
0
-25
0
25
50
75
100
125
150
VGS=0V
10
2
10
1
10
0
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
10
VDS=60V
ID=75A
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEP80N75/CEB80N75
CEF80N75
6
4
2
0
0
15
30
45
60
75
RDS(ON)Limit
10
2
10
1
10
90
3
100ms
1ms
10ms
DC
TC=25 C
TJ=175 C
Single Pulse
0
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
0.1
-1
PDM
0.05
0.02
0.01
t1
Single Pulse
10
-2
10
-2
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
3
10
4
2
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