Comchip CEFA101-G Smd efficient fast recovery rectifier Datasheet

SMD Efficient Fast Recovery Rectifiers
CEFA101-G Thru. CEFA105-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 1.0 Amp
RoHS Device
Features
DO-214AC (SMA)
-Ideal for surface mount applications.
-Easy pick and place.
0.180(4.57)
0.160(4.06)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.110(2.79)
0.086(2.18)
0.067(1.70)
0.051(1.29)
-Super fast recovery time for high efficient.
-Built-in strain relief.
-Low forward voltage drop.
0.209(5.31)
0.185(4.70)
Mechanical data
-Case: JEDEC DO-214AC, molded plastic.
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.059(1.50)
0.035(0.89)
0.008(0.20)
0.004(0.10)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.063 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Symbol
CEFA101-G CEFA102-G CEFA103-G CEFA104-G CEFA105-G
Units
Max. repetitive peak reverse voltage
VRRM
50
100
200
400
600
V
Max. DC blocking voltage
VDC
50
100
200
400
600
V
Max. RMS voltage
VRMS
35
70
140
280
420
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
30
A
Max. average forward current
IO
1.0
A
Max. instantaneous forward voltage at
1.0A
VF
0.92
1.25
1.3
V
Reverse recovery time
Trr
25
35
50
nS
Max. DC reverse current at TA=25
rated DC blocking voltage TA=100
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
C
C
O
IR
5.0
200
RθJL
25
TJ
150
O
C
TSTG
-55 to +150
O
C
μA
O
C/W
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper2 pad area.
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Comchip Technology CO., LTD.
SMD Efficient Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CEFA101-G thru CEFA105-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
100
10
CEFA101-G~103-G
O
TJ=125 C
1
F o r w a rd C u rren t(A)
Rever s e C urr e n t (μA )
10
TJ=75 OC
1
0.1
CEFA104-G
CEFA105-G
0.1
0.01
TJ=25 OC
O
TJ=25 C
Pulse width 300μS
4% duty cycle
0.01
0.001
0
30
60
90
120
0
150
0.4
0.8
1.6
1.2
2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Junction Capacitance
Fig.4 Non-repetitive Forward Surge Current
35
50
O
J u n c ti o n C apacian
t ce(p F )
30
Peak F or ward Surge C ur re nt A
( )
TJ=25 OC
f=1MHz and applied
4VDC reverse voltage
25
20
CEFA101-G~103-G
15
CEFA104-G~105-G
10
5
TJ=25 C
8.3ms single half sine
wave, JEDEC method
40
30
20
10
0
0
0.01
0.1
1
10
100
1
10
100
Number of Cycles at 60Hz
Reverse Voltage (V)
Fig.6 Current Derating Curve
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
2.8
trr
10Ω
NONINDUCTIVE
Average Forward Current (A)
50Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
2.4
2.0
1.6
1.2
Single phase
Half wave 60Hz
0.8
0.4
0
0
1cm
Set time base for
50 / 10nS / cm
25
50
75
100
125
Ambient Temperature (
150
O
175
C)
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Comchip Technology CO., LTD.
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