CET CEG8205A Dual n-channel enhancement mode field effect transistor Datasheet

CEG8205A
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V.
RDS(ON) = 30mΩ (typ) @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
G2
S2
S2
D
D
1
8 D
S1
2
7 S2
S1
3
6 S2
G1
4
5 G2
G1
S1
S1
D
TSSOP-8
ABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
20
Units
V
Gate-Source Voltage
VGS
±12
V
ID
6
A
IDM
25
A
PD
1.5
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
83
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Rev 1.
2005.November
http://www.cetsemi.com
8 - 18
CEG8205A
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
20
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 18V, VGS = 0V
1
µA
IGSSF
VGS = 12V, VDS = 0V
100
nA
IGSSR
VGS = -12V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
VGS(th)
Static Drain-Source
RDS(on)
On-Resistance
Forward Transconductance
Dynamic Characteristics
gFS
VGS = VDS, ID = 250µA
1.2
V
VGS = 4.5V, ID = 4.5A
0.5
21
27.5
mΩ
VGS = 2.5V, ID = 3.5A
30
37.5
mΩ
VDS = 5V, ID = 4.5A
10
S
600
pF
330
pF
140
pF
8
d
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 8V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6Ω
10
20
ns
11
25
ns
35
70
ns
Turn-Off Fall Time
tf
30
60
ns
Total Gate Charge
Qg
10
15
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 10V, ID = 6A,
VGS = 4.5V
2.3
nC
2.9
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1.7A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
8 - 19
1.7
A
1.2
V
CEG8205A
10
30
25 C
VGS=2.0V
8
ID, Drain Current (A)
ID, Drain Current (A)
VGS=4.5,3.5,2.5V
6
4
2
24
18
12
6
VGS=1.5V
TJ=125 C
0
0
0
1
2
3
0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
3
Figure 2. Transfer Characteristics
600
450
Coss
300
Crss
150
0
0
2
4
6
8
10
1.8
1.6
ID=4.5A
VGS=4.5V
1.4
1.2
1.0
0.8
0.6
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
2.0
Figure 1. Output Characteristics
Ciss
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
2
VGS, Gate-to-Source Voltage (V)
750
1.2
1
VDS, Drain-to-Source Voltage (V)
900
1.3
-55 C
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
8 - 20
5 V =10V
DS
ID=4.5A
10
4
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEG8205A
3
2
1
0
0
3
6
9
RDS(ON)Limit
10
10
10
10
12
2
1ms
10ms
100ms
1s
DC
1
0
-1
TA=25 C
TJ=150 C
Single Pulse
-2
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
8
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
8 - 21
10
1
10
2
2
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