CET CEH2311 P-channel enhancement mode field effect transistor Datasheet

CEH2311
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -3.5A, RDS(ON) = 85mΩ
@VGS = -4.5V.
RDS(ON) = 130mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
D(1,2,5,6,)
Lead free product is acquired.
TSOP-6 package.
4
5
6
G(3)
3
2
1
S(4)
TSOP-6
ABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
-20
Units
V
Gate-Source Voltage
VGS
±12
V
ID
-3.5
A
IDM
-14
A
PD
2.0
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
62.5
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Rev 1.
2005.January
http://www.cetsemi.com
8 - 30
CEH2311
Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-20
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -20V, VGS = 0V
-1
µA
IGSSF
VGS = 12V, VDS = 0V
100
nA
IGSSR
VGS = -12V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
-1
V
VGS = -4.5V, ID = -4.5A
-0.6
70
85
mΩ
VGS = -2.5V, ID = -3.7A
97
130
mΩ
Dynamic Characteristics d
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -10V, ID = -4.5A
VDS = -8V, VGS = 0V,
f = 1.0 MHz
10
S
880
pF
270
pF
175
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = -10V, ID = -1A,
VGS = -4.5V, RGEN = 6Ω
11
20
ns
5
10
ns
32
65
ns
Turn-Off Fall Time
tf
23
45
ns
Total Gate Charge
Qg
11
14.5
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -10V, ID = -4.5A,
VGS = -4.5V
1.5
nC
2.1
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -1.7A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
8 - 31
-1.7
A
-1.2
V
8
CEH2311
10
5
25 C
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=4.5,4,3,V
8
-VGS=2.5V
6
-VGS=2.0V
4
2
4
3
2
1
-VGS=1.5V
TJ=125 C
0
0
0
1
2
3
4
5
0.0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
2.0
2.5
Figure 2. Transfer Characteristics
800
600
400
Coss
Crss
200
0
0
2
4
6
8
10
2.2
1.9
ID=-4.5A
VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
1.5
Figure 1. Output Characteristics
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
1.0
-VGS, Gate-to-Source Voltage (V)
1000
1.2
0.5
-VDS, Drain-to-Source Voltage (V)
1200
1.3
-55 C
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.2
0.4
0.6
0.8
1.0
1.2
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
8 - 32
10
5 V =-10V
DS
ID=-4.5A
4
3
2
1
10
10
10
10
0
0
2
RDS(ON)Limit
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
CEH2311
3
6
9
12
1
1ms
10ms
100ms
1s
DC
0
-1
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
8
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
8 - 33
10
1
10
2
2
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