CET CEP6601 P-channel enhancement mode field effect transistor Datasheet

CEP6601/CEB6601
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -19A, RDS(ON) = 86mΩ @VGS = -10V.
RDS(ON) = 125mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
G
S
CEB SERIES
TO-263(DD-PAK)
ABSOLUTE MAXIMUM RATINGS
Parameter
G
D
S
CEP SERIES
TO-220
Tc = 25 C unless otherwise noted
Symbol
Limit
-60
Units
V
VGS
±20
V
ID
-19
A
IDM
-76
A
50
W
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
S
a
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
Operating and Store Temperature Range
0.33
W/ C
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
3
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
C/W
Rev .2 2010.July.
http://www.cetsemi.com
Details are subject to change without notice .
1
CEP6601/CEB6601
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-60
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -60V, VGS = 0V
-1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
VGS(th)
RDS(on)
gFS
Dynamic Characteristics c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = VDS, ID = -250µA
-3
V
VGS = -10V, ID = -8A
61
86
mΩ
VGS = -4.5V, ID = -6A
VDS = -10V, ID = -15A
75
125
10
mΩ
S
1135
pF
95
pF
60
pF
VDS = -30V, VGS = 0V,
f = 1.0 MHz
-1
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = -30V, ID = -1A,
VGS = -10V, RGEN = 6Ω
13
26
ns
4
8
ns
45
90
ns
Turn-Off Fall Time
tf
6
12
ns
Total Gate Charge
Qg
22.6
29.4
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -30V, ID = -3.5A,
VGS = -10V
2.4
nC
5.7
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = -19A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
-19
A
-1.5
V
CEP6601/CEB6601
25
10
8
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=10,8,6V
6
-VGS=3V
4
2
0
0
0.3
0.6
0.9
1.2
1.5
1
2
3
4
5
6
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
500
Coss
250
Crss
5
10
15
20
25
30
2.8
2.4
ID=-8A
VGS=-10V
2.0
1.6
1.2
0.8
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
0
-55 C
Figure 1. Output Characteristics
Ciss
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
TJ=125 C
-VGS, Gate-to-Source Voltage (V)
750
1.2
25 C
5
1.8
1000
1.3
10
-VDS, Drain-to-Source Voltage (V)
1250
0
15
0
1500
0
20
-25
0
25
50
75
100
125
150
10
2
10
1
10
0
10
-1
VGS=0V
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10 V =-30V
DS
ID=-3.5A
10
6
4
2
0
0
2
RDS(ON)Limit
8
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
CEP6601/CEB6601
5
10
15
10
1ms
1
10ms
DC
10
10
20
100µs
0
TC=25 C
TJ=175 C
Single Pulse
-1
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
0.02
0.01
Single Pulse
10
-2
10
-5
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
2
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