CED1012/CEU1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES TO-252(D-PAK) ABSOLUTE MAXIMUM RATINGS Parameter G D S CED SERIES TO-251(I-PAK) Tc = 25 C unless otherwise noted Symbol Limit 120 Units V VGS ±20 V ID 10 A IDM 40 A 50 W Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed S a Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range 0.3 W/ C TJ,Tstg -55 to 175 C Thermal Characteristics Symbol Limit Units Thermal Resistance, Junction-to-Case Parameter RθJC 3 C/W Thermal Resistance, Junction-to-Ambient RθJA 50 C/W Rev 2. 2007.Jan http://www.cetsemi.com Details are subject to change without notice . 1 CED1012/CEU1012 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 120 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 120V, VGS = 0V 25 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 120 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA 2 RDS(on) VGS = 10V, ID = 10A 100 gFS VDS = 10V, ID = 5A 5 S 690 pF 195 pF 85 pF Dynamic Characteristics c Forward Transconductance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 30V, ID = 15A, VGS = 10V, RGEN = 20Ω 15 30 ns 10 20 ns 37 74 ns Turn-Off Fall Time tf 14 28 ns Total Gate Charge Qg 23.6 31.4 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 96V, ID = 10A, VGS = 10V 3.8 nC 9 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 10A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 10 A 1.2 V 6 CED1012/CEU1012 VGS=10,9,8,7V 20 VGS=6V 10 ID, Drain Current (A) ID, Drain Current (A) 12 8 6 4 VGS=5V 2 0 0 1 2 3 4 5 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 800 Ciss 400 Coss Crss 0 5 10 15 20 25 2.6 2.2 ID=10A VGS=10V 1.8 1.4 1.0 0.6 0.2 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 0 VDS, Drain-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage TJ=125 C 5 6 1600 1.2 10 -55 C 2000 1.3 15 0 2400 0 25 C -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=96V ID=10A RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CED1012/CEU1012 6 4 2 0 10ms 10 6 12 18 24 1ms 10ms DC 10 0 100ms 1 6 TC=25 C TJ=175 C Single Pulse 0 10 0 10 1 10 2 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 10 PDM 0.1 -1 0.05 0.02 0.01 Single Pulse t1 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -2 t2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4