UMS CHA2066-QAG 10-16ghz low noise amplifier Datasheet

CHA2066-QAG
RoHS COMPLIANT
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2066-QAG is a two-stage wide band
monolithic low noise amplifier. Typical
applications range from telecommunication
(point to point, point to multi-point, VSAT) to
ISM and military markets.
The circuit is manufactured with a standard PHEMT process: 0.25µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is supplied in lead-free SMD package.
CHA2066-QAG ( low current )
20
18
Main Features
Gain & NF ( dB )
16
■ Broadband performance 10-16GHz
■ 2.5dB noise figure, 10-16GHz (BD)
■ 16dB gain, ± 1.5dB gain flatness
■ Low DC power consumption.
■ 20dBm 3rd order intercept point (BE)
■ 16L-QFN3x3 SMD package
(BD & BE refer to biasing conditions)
14
12
10
Gain dB
NF
8
6
4
2
0
8
9
10
11
12
13
14
Frequency ( GHz )
15
16
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Min
Typ
Max
Unit
2.5
3.0
dB
NF
Noise figure, 10-16GHz (BD)
G
Gain
14
16
dB
3rd order intercept point (BE)
20
21
dBm
IP3
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. DSCHA2066QAG6332 - 28 Nov 06
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
17
18
10-16GHz Low Noise Amplifier
CHA2066-QAG
Electrical Characteristics (BD: Low current biasing)
Tamb = +25°C, Vd = +4V
Symbol
Fop
G
Parameter
Min
Operating frequency range
10
Gain
14
Typ
Max
Unit
16
Ghz
16
dB
∆G
Gain flatness
± 1.5
± 2.0
dB
NF
Noise figure
2.5
3.0
dB
VSWRin
Input VSWR
2.0 :1
3.0:1
Ouput VSWR (11 to 16 GHz)
1.5:1
2.0:1
VSWRout
IP3
3rd order intercept point
Output power at 1dB gain compression
P1dB
Id
17
18
dBm
9.0
10
dBm
Drain bias current
50
65
mA
These values are representative of onboard measurements based on the propose characterization
board.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter (1)
Values
Unit
Vd
Drain bias voltage (2)
4.5
V
Pin
Maximum input power overdrive
-3.0
dBm
Rth_BD
Thermal Resistance channel to ground paddle (3)
155
°C/W
Rth_BE
Thermal Resistance channel to ground paddle (3)
195
°C/W
Top
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) For a typical biasing circuit: B & D grounded. See chip biasing option page 9/12.
(3) Thermal resistance for Tamb. = +85°C and a Tj max = +175°C.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
2/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066-QAG
Electrical Characteristics (BE: High current biasing)
Tamb = +25°C, Vd = +4V
Symbol
Fop
G
Parameter
Min
Operating frequency range
10
Gain
14
Typ
Max
Unit
16
Ghz
16
dB
∆G
Gain flatness
± 1.5
± 2.0
dB
NF
Noise figure
3.0
3.5
dB
VSWRin
Input VSWR
2.0 :1
3.0:1
Ouput VSWR (11 to 16 GHz)
1.5:1
2.0:1
VSWRout
IP3
P1dB
Id
3rd order intercept point
Output power at 1dB gain compression
Drain bias current
20
21
dBm
13
14
dBm
70
80
mA
These values are representative of onboard measurements based on the propose characterization
board.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
3/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066-QAG
Typical PCB Measured Performance
BD: Low Noise & Low Consumption (T amb. 25°C; B & D grounded)
Tamb = +25°C, Vd = +4V
CHA2066-QAG ( Low current )
20
16
12
8
Sij ( dB )
4
dBS11
0
dBS12
dBS21
dBS22
-4
-8
-12
-16
-20
-24
-28
6
8
10
12
14
16
18
20
22
Frequency ( GHz )
Sij in the package access plans, using the proposed land patern & board.
CHA2066-QAG ( low current )
20
18
16
Gain & NF ( dB )
14
12
10
Gain dB
NF
8
6
4
2
0
8
9
10
11
12
13
14
15
16
17
18
Frequency ( GHz )
Gain & NF in the package, using the proposed land patern & board.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
4/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066-QAG
Typical Package Sij parametres
BD: Low Noise & Low Consumption (T amb. 25°C; B & D grounded)
Tamb = +25°C, Vd = +4V
Freq (GHz)
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
19.00
20.00
21.00
22.00
23.00
24.00
25.00
26.00
27.00
28.00
29.00
30.00
dBS11
-0.07
-0.45
-0.88
-1.40
-2.92
-5.26
-8.21
-9.01
-8.96
-10.57
-14.43
-20.81
-16.28
-12.25
-10.79
-10.41
-8.49
-7.23
-5.15
-3.83
-3.66
-4.12
-5.14
-6.57
-7.93
-7.57
-5.73
-3.48
-2.24
-1.67
PS11
-32.81
-65.34
-98.76
-137.64
174.92
114.65
49.08
-4.96
-53.79
-99.92
-148.00
138.33
73.75
24.06
-4.78
-17.87
-27.44
-40.10
-61.69
-87.40
-115.49
-138.34
-158.51
-170.13
-173.76
-165.83
-166.05
-172.97
176.23
166.40
dBS12
-63.73
-65.72
-55.17
-53.89
-50.86
-53.58
-53.95
-42.49
-38.52
-35.09
-32.70
-30.58
-31.37
-31.27
-31.18
-30.83
-31.91
-31.20
-29.59
-27.70
-27.45
-28.22
-27.99
-28.22
-28.81
-29.57
-31.13
-31.61
-33.44
-34.06
PS12
155.32
131.09
81.01
101.44
67.72
27.26
102.90
83.25
49.24
21.84
-13.00
-49.54
-83.26
-109.01
-131.65
-156.53
173.64
172.53
153.69
125.70
94.93
69.02
46.60
26.29
2.91
-22.04
-34.87
-56.30
-68.53
-82.14
dBS21
-45.04
-43.50
-28.86
-9.03
2.29
10.78
15.10
16.93
17.85
18.37
18.28
17.51
17.24
16.52
15.85
15.61
15.52
14.85
13.57
11.65
9.04
6.26
3.63
0.88
-2.22
-6.10
-10.73
-15.64
-20.49
-24.09
PS21
-130.29
173.73
-84.51
-127.43
170.98
97.39
22.29
-42.88
-99.72
-151.89
158.56
113.02
73.36
33.07
-4.32
-40.93
-80.78
-123.20
-166.84
150.73
111.11
76.39
43.54
10.62
-22.25
-54.04
-78.74
-97.73
-104.47
-106.27
dBS22
0.22
0.11
-0.49
-1.62
-1.91
-3.20
-4.84
-6.12
-7.71
-9.47
-12.71
-15.50
-20.34
-22.16
-29.27
-24.00
-15.41
-10.41
-7.13
-5.57
-4.87
-4.61
-4.03
-3.53
-2.63
-2.08
-1.64
-1.05
-0.77
-0.27
PS22
-22.46
-46.01
-70.41
-88.42
-109.44
-134.57
-151.54
-173.88
158.77
121.42
72.56
19.69
-5.61
-29.50
-48.96
71.70
45.23
28.78
2.09
-28.15
-54.30
-75.71
-94.54
-111.54
-126.44
-141.15
-154.74
-166.34
-176.68
173.66
Refere to the “definition of the Sij reference plans” section below.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
5/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066-QAG
Typical PCB Measured Performance
BE: Low Noise & High Consumption (T amb. 25°C; B & E grounded)
Tamb = +25°C, Vd = +4V
CHA2066-QAG ( High current )
20
16
12
8
Sij ( dB )
4
dBS11
0
dBS12
dBS21
dBS22
-4
-8
-12
-16
-20
-24
-28
6
8
10
12
14
16
18
20
22
Frequency ( GHz )
Sij in the package access plans, using the proposed land patern & board.
CHA2066-QAG ( Low & high current )
24
22
20
P -1dB & OIP3 ( dBm )
18
16
14
12
10
8
6
4
2
Pout -1dB BD
OIP3 BD
Pout -1dB BE
OIP3 BE
0
7
8
9
10
11
12
13
14
15
16
17
18
Frequency ( GHz )
Pout –1dB & OIP3 in the package, using the proposed land patern & board.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
6/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066-QAG
Typical Package Sij parametres
BE: Low Noise & High Consumption (T amb. 25°C; B & E grounded)
Tamb = +25°C, Vd = +4V
Freq
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
19.00
20.00
21.00
22.00
23.00
24.00
25.00
26.00
27.00
28.00
29.00
30.00
dBS11
-0.06
-0.44
-0.87
-1.38
-2.91
-5.25
-8.24
-9.04
-8.81
-10.18
-13.62
-19.18
-15.38
-11.68
-10.38
-10.21
-8.57
-7.68
-5.40
-3.86
-3.60
-4.13
-5.13
-6.56
-7.89
-7.56
-5.73
-3.52
-2.28
-1.74
PS11
-32.83
-65.39
-98.89
-137.90
174.61
114.52
49.38
-4.12
-53.24
-100.30
-149.42
138.59
75.97
24.19
-7.42
-21.88
-33.43
-43.47
-62.60
-87.55
-115.42
-138.36
-158.10
-169.57
-172.95
-165.38
-165.65
-172.96
176.11
165.52
dBS12
-63.05
-65.94
-55.38
-54.31
-50.63
-52.37
-52.51
-42.99
-38.92
-35.31
-32.83
-30.61
-31.34
-31.15
-30.90
-30.60
-32.22
-31.34
-29.57
-27.49
-26.98
-27.93
-27.69
-27.90
-28.39
-29.21
-30.78
-31.33
-33.18
-33.95
PS12
154.13
130.29
78.54
104.66
69.94
30.30
86.03
80.40
48.79
22.90
-11.96
-48.80
-82.22
-108.12
-131.51
-157.78
174.12
173.10
155.96
127.88
96.14
70.63
46.58
26.86
2.79
-22.16
-35.27
-57.32
-69.14
-83.12
dBS21
-43.95
-43.95
-27.08
-8.50
2.61
11.16
15.55
17.42
18.37
18.91
18.84
18.07
17.78
17.02
16.30
16.13
16.05
15.52
14.35
12.46
9.77
6.91
4.26
1.48
-1.62
-5.55
-10.18
-15.13
-20.05
-23.73
PS21
-133.71
170.25
-76.01
-128.93
170.88
98.22
23.53
-41.65
-98.51
-150.77
159.62
113.90
74.36
34.08
-2.99
-38.98
-78.76
-120.87
-165.06
151.53
111.34
76.47
43.61
10.62
-22.36
-54.31
-79.17
-98.50
-105.53
-107.10
dBS22
0.25
0.13
-0.53
-1.50
-1.70
-2.87
-4.42
-5.62
-7.13
-8.61
-11.31
-13.46
-17.32
-18.79
-23.23
-31.30
-17.77
-11.24
-7.34
-5.55
-4.86
-4.66
-4.09
-3.57
-2.65
-2.10
-1.65
-1.05
-0.78
-0.28
PS22
-22.35
-46.01
-70.57
-87.59
-109.15
-134.71
-152.27
-176.16
155.31
116.72
67.54
17.22
-11.39
-38.57
-70.09
81.59
47.88
33.04
5.05
-27.38
-54.73
-76.49
-95.03
-111.80
-126.37
-141.05
-154.66
-166.34
-176.83
173.49
Refere to the “definition of the Sij reference plans” section below.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
7/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066-QAG
Package outline:
Matt tin, Lead Free
(Green)
1- NC
Units
mm
2- GND
10- RF out
From the standard
JEDEC MO-220
3- RF in
11- GND
4- GND
12- NC
5- NC
13- NC
6- B
14- Vd
7- D
15- Vg2
8- E
16- Vg1
17- GND
Ref. : DSCHA2066QAG6332 - 28 Nov 06
8/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
9- GND
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066-QAG
Definition of the Sij reference plans
The reference plans are defined from the
footprint
of
the
recommended
characterization board shown below under
the number 95542.
The reference is the symmetrical axis of the
package. The input is and output reference
plans are located at 2.65mm offset (input
wise and output wise respec.) from this axis.
Then, the given Sij incorporates this land
patern.
2.65
2.65
Circuit Biasing options
This circuit is self-biased, and flexibility is provided by the access to number of pads. the
internal DC electrical schematic is given in order to use these pads in a safe way.
- The two requirements are:
N°1: Not exceed Vds = 3.5Volt
(internal Drain to S ource voltage).
N°2: Not biased in such a way that Vgs becomes posi tive. (Internal Gate to Source voltage)
- We propose two standard biasing:
Low Noise and low consumption BD:
Low Noise and high output power BE:
Ref. : DSCHA2066QAG6332 - 28 Nov 06
Vd = 4V, B and D grounded, and E not connected.
Idd = 50mA & Pout-1dB = +10dBm Typical.
Vd = 4V, B and E grounded.
Idd = 70mA & Pout-1dB = +14dBm Typical.
9/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066-QAG
Application note
The design of the motherboard has a strong impact on the over all performance since the
transition from the motherboard to the package is comparably large. In case of the SMD type
packages of United Monolithic Semiconductors the motherboard should be designed
according to the information given in the following to achieve good performance. Other
configurations are also possible but can lead to different results. If you need advise please
contact United Monolithic Semiconductors for further information.
SMD type packages of UMS should allow design and fabrication of micro- and mm-wave
modules at low cost. Therefore, a suitable motherboard environment has been chosen. All
tests and verifications have been performed on Rogers RO4003. This material exhibits a
permittivity of 3.38 and has been used with a thickness of 200µm [8 mils] and a 1/2oz or less
copper cladding. The corresponding 50Ohm transmission line has a strip width of about
460µm [approx. 18 mils].
The contact areas on the motherboard for the package connections should be designed
according to the footprint given below. The proper via structure under the ground pad is very
important in order to achieve a good RF and lifetime performance. All tests have been done
by using a grid of plated through vias with a diameter of less than 300µm [12 mils] and a
spacing of less than 700µm [28 mils] from the centres of two adjacent vias. The via grid
should cover the whole space under the ground pad and the vias closest to the RF ports
should be located near the edge of the pad to allow a good RF ground connection. Since the
vias are important for heat transfer, a proper via filling should be guaranteed during the
mounting procedure to get a low thermal resistance between package and heat sink. For
power devices the use of heat slugs in the motherboard instead of a grid of via’s is
recommended.
For the mounting process the SMD type package can be handled as a standard surface
mount component. The use of either solder or conductive epoxy is possible. The solder
thickness after reflow should be typical 50µm [2 mils] and the lateral alignment between the
package and the motherboard should be within 50µm [2 mils]. Caution should be taken to
obtain a good and reliable contact over the whole pad areas. Voids or other improper
connections, in particular, between the ground pads of motherboard and package will lead to
a deterioration of the RF performance and the heat dissipation. The latter effect can reduce
drastically reliability and lifetime of the product.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
10/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066-QAG
(For production, design must be adapted with regard to PCB tolerances and
assembly process)
Basic footprint for a 16L-QFN3x3 (all unit mm)
(Please, refer to the UMS proposed footprint for optimum
operation in the following “Proposed Assembly board” section)
The RF ports are DC blocked on chip. The DC connection (Vd) does not include any
decoupling capacitor in package, therefore it is mandatory to provide a good external DC
decoupling on the PC board, as close as possible to the package.
SMD mounting procedure
The SMD leadless package has been designed for high volume surface mount PCB
assembly process. The dimensions and footprint required for the PCB (motherboard) are
given in the drawings above.
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
11/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066-QAG
Proposed Assembly
characterization.
-
-
board
for
the
16L-QFN3x3
products
Compatible with the proposed footprint.
Based on typically Ro4003 / 8mils or equivalent.
Using a microstrip to coplanar transition to access the package.
Recommended for the implementation of this product on a module board.
Ordering Information
QFN 3x3 RoHS compliant package:
CHA2066-QAG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United Monolithic
Semiconductors S.A.S.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
12/12
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice
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