CHENMKO ENTERPRISE CO.,LTD CHEMA4PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) * High current gain. * Suitable for high packing density. * * * * SOT553 Low colloector-emitter saturation. High saturation current capability. Two CHDTA114T chips in a package. Built in bias resistor(R1=10kΩ, Typ. ) (4) (3) 0.50 0.9~1.1 0.15~0.3 MARKING 0.50 (5) 1.5~1.7 (1) 1.1~1.3 * A4 0.5~0.6 0.19~0.18 CIRCUIT 3 2 R1 1.5~1.7 1 R1 4 5 SOT553 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage -50 V VCEO Collector-Emitter voltage -50 V VEBO Emitter-Base voltage -5 V IC Coll ector current -100 mA PC Collector Power dissipation 150 mW TSTG Storage temperature −55 ∼ +150 TJ Junction temperature 150 Note 1. Transistor mounted on an FR4 printed-circuit board. Tamb ≤ 25 OC, Note 1 O O C C 2004-07 RATING CHARACTERISTIC ( CHEMA4PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL PARAMETER CONDITIONS MIN. MAX. UNIT -50.0 − − V -50.0 − − V − V BVCBO Collector-Base breakdown voltage BVCEO Collector-Emitter breakdown voltage IC= -1mA BVEBO Emitter-Base breakdown voltage IE= -50uA -5.0 − IC= -50uA TY P . − VCE(sat) Collector-Emitter Saturation voltage IC= -10mA; IB= -1mA − -0.3 V ICBO Collector-Base current VCB= -50V − − -0.5 uA IEBO Emitter-Base current VEB= -4V − − -0.5 uA hFE DC current gain IC= -1mA; VCE= -5.0V 100 250 600 R1 Input resistor 7 10 13 KΩ − 250 − MHz fT Transition frequency Note 1.Pulse test: tp≤300uS; δ≤0.02. IE=5mA, VCE= -10.0V f=100MHz = RATING CHARACTERISTIC CURVES ( CHEMA4PT ) Fig.1 DC current gain vs. collector current 1k VCE=-5V DC CURRENT GAIN : hFE 500 200 100 50 O Ta=100 C 25OC -40OC 20 10 5 2 1 -100u −1m -5m -10m -50m -100m COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Typical Electrical Characteristics Fig.2 Collector-emitter saturation voltage vs. collector current -1 lC/lB=20 -500m -200m -100m -50m -20m 100OC 25OC -40 OC -10m -5m -2m -1m -100u -500u -1m -5m -10m COLLECTOR CURRENT : IC (A) -50m -100m