CHENMKO ENTERPRISE CO.,LTD CHT2222APT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. .019 (0.50) .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * High current (Max.=600mA). * Suitable for high packing density. .066 (1.70) .110 (2.80) .082 (2.10) .119 (3.04) (1) .018 (0.30) FEATURE (3) (2) CONSTRUCTION .103 (2.64) .086 (2.20) MARKING .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) 3 CIRCUIT .007 (0.177) * S1P .002 (0.05) .055 (1.40) .047 (1.20) * NPN Switching Transistor 1 2 SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 600 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-7 RATING CHARACTERISTIC CURVES ( CHT2222APT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = 60 V − 10 nA IC = 0; VCB = 60 V; Tj = 125 OC − 10 uA IEBO emitter cut-off current IC = 0; VEB = 5 V − 10 nA hFE DC current gain IC = 0.1 mA; VCE = 10V; note 1 35 − IC = 1.0 mA; VCE = 10V 50 75 − − IC = 10 mA; VCE = 10V;Tamb = -55OC 35 − IC = 150 mA; VCE = 10V 100 300 IC = 150 mA; VCE = 1.0V 50 − IC = 500 mA; VCE = 10V 40 − collector-emitter saturation voltage IC = 150 mA; IB = 15 mA − 300 mV IC = 500 mA; IB = 50 mA − 1 V base-emitter saturation voltage IC = 150 mA; IB = 15 mA 0.6 1.2 V IC = 500 mA; IB = 50 mA − 2.0 V IC = 10 mA; VCE = 10V VCEsat VBEsat Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 8 pF Ce emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 25 pF fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 300 − MHz F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 1.0 kHz − 4 dB Switching times (between 10% and 90% levels); − 35 ns − 15 ns rise time − 20 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA V CE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) 500 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) 500 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current V BESAT - BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN RATING CHARACTERISTIC CURVES ( CHT2222APT ) 0.4 = 10 0.3 125 °C 0.2 25 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Emitter Transition and Output Capacitance vs Reverse Bias Voltage Collector-Cutoff Current vs Ambient Temperature 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) Collector-Emitter Saturation Voltage vs Collector Current 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (° C) 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 RATING CHARACTERISTIC CURVES ( CHT2222APT ) Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = Switching Times vs Collector Current 400 Ic V cc = 25 V TIME (nS) V cc = 25 V 160 240 ts 160 tr t off 80 tf 80 t on td 100 I C - COLLECTOR CURRENT (mA) 1000 0 10 100 I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) 10 320 240 0 10 Ic I B1 = I B2 = 10 320 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 1000 V CE = 10 V T A = 25oC 6 hoe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 CHAR. RELATIVE TO VALUES AT TA = 25oC Common Emitter Characteristics 8 CHAR. RELATIVE TO VALUES AT VCE = 10V CHAR. RELATIVE TO VALUES AT I C= 10mA RATING CHARACTERISTIC CURVES ( CHT2222APT ) Common Emitter Characteristics 2.4 V CE = 10 V I C = 10 mA 2 h re h fe 1.6 hoe 1.2 0.8 0.4 0 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) Common Emitter Characteristics 1.3 I C = 10 mA T A = 25oC 1.25 h fe 1.2 1.15 h ie 1.1 1.05 1 h re 0.95 0.9 0.85 hoe 0.8 0.75 0 5 h ie 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 100 RATING CHARACTERISTIC CURVES ( CHT2222APT ) Test Circuits 30 V 200 16 V 1.0 K 0 200ns 500 Saturated Turn-On Switching Time 6.0 V - 1.5 V NOTE: BVEBO = 5.0 V 1k 30 V 1.0 K 0 200ns 50 Saturated Turn-Off Switching Time 37