CHENMKO ENTERPRISE CO.,LTD CHT2302WPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE (3) * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. (2) * Small surface mounting type. (SC-70/SOT-323) * High density cell design for low R DS(ON). * Suitable for high packing density. (1) 1.3±0.1 0.65 2.0±0.2 0.65 0.3±0.1 1.25±0.1 CONSTRUCTION * N-Channel Enhancement MARKING * 22 0.8~1.1 0.05~0.2 D CIRCUIT 0~0.1 0.1Min. 3 2.0~2.45 1G S Dimensions in millimeters 2 Absolute Maximum Ratings Symbol SC-70/SOT-323 TA = 25°C unless otherwise noted Parameter CHT2302WPT Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±8 V Maximum Drain Current - Continuous (Note 1) 2.8 (Note 2) 10 (Note 1) 1.6 A 1250 mW -55 to 150 °C ID A - Pulsed IS Drain-Source Diose Forward Current PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range (Note 1) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 85 °C/W 2004-8 RATING CHARACTERISTIC CURVES ( CHT2302WPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA I GSS Gate-Body Leakage VGS = 8 V, VDS = 0 V +100 nA I GSS Gate-Body Leakage VGS = -8 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VSD V 20 Diose Forward Voltage VDS = VGS, ID = 250 µA 0.7 V VGS=4.5V, ID=3.6A 85 VGS=2.5V, ID=3.1A 115 VDS = VGS, ID = -250 µA 1.0 mΩ V SWITCHING CHARACTERISTICS (Note 3) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd 6.52 VDS=10V, ID=1A VGS=4.5V 1.6 1.16 t on Turn-On Time V DD= 10V 12 tr Rise Time I D = 1.0A , VGEN = 4.5 V 36 t off Turn-Off Time RL= 10 Ω , RGEN= 10 Ω 34 tf Fall Time Note : 3. Guaranteed by design , not subject to production trsting nC 10 nS RATING CHARACTERISTIC CURVES ( CHT2302WPT ) Typical Electrical Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics 10 10 4.5V 4.0V 3.5V 3.0V 2.5V 8 I D , DRAIN-SOURCE CURRENT (A) I D , DRAIN-SOURCE CURRENT (A) V G S =5 . 0 V V G S =2 . 0 V 6 4 2 0 V G S =1 . 5 V 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) TJ=125°C 8 6 4 TJ=-55°C 2 TJ=25°C 0 5 6 0 VGS Figure 3. Breakdown Voltage Variation with Temperature R DS(on) , NORMALIZED 1.05 1.00 0.95 0.90 0.85 0 25 50 75 TJ , JUNCTION T EMPERATURE (°C) 100 DRAIN-SOURCE ON-RESISTANCE BREAKDOWN VOLTAGE BVDSS , NORMALIZED GATE-SOURCE 1.8 ID=250uA 1.10 -25 1.4 1.2 1.0 0.8 0.6 -25 0 25 50 75 TJ , JUNCTION T EMPERATURE (°C) 100 125 Figure 6. Gate Charge 5 VGS , GATE TO SOURCE VOLTAGE (V) ID=250uA 1.10 THRESHOLD VOLTAGE 3.0 VGS=4.5V ID=3.6A 0.4 -50 125 1.15 Vth , NORMALIZED GATE-SOURCE 2.5 1.6 Figure 5. Gate Threshold Variation with Temperature 1.05 1.00 0.95 0.90 0.85 0.80 -50 1.0 1.5 2.0 , GATE-TE-SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Temperature 1.15 0.80 -50 0.5 VDS=10V ID=1.0A 4 3 2 1 0 -25 0 25 50 75 TJ , JUNCTION T EMPERATURE (°C) 100 125 0 1 2 3 4 5 Qg , TOTAL GATE CHARGE (nC) 6 7 8