CHENMKO ENTERPRISE CO.,LTD CHT5401ZPT SURFACE MOUNT PNP SILICON Transistor VOLTAGE 150 Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. 1.65+0.15 6.50+0.20 0.90+0.05 3.00+0.10 2.0+0.3 MARKING 0.70+0.10 * ZFP 0.9+0.2 2.0+0.3 3.5+0.2 *PNP SILICON Transistor 7.0+0.3 CONSTRUCTION 0.70+0.10 2.30+0.1 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 1 1 Base CIRCUIT 3 2 2 Emitter C (3) 3 Collector ( Heat Sink ) (1) B E (2) SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − VCEO collector-emitter voltage open base − -160 -150 VEBO emitter-base voltage open collector − -5.0 V IC collector current (DC) − -500 mA Ptot total power dissipation − 2.0 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 V V Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHT5401ZPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 357 K/W Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS ICBO collector cut-off current VCB = -100 V IEBO emitter cut-off current VEB=3.0V hFE DC current gain VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage Cob collector capacitance hfe MIN. MAX. UNIT − -50 nA − -50 nA − IC = -1.0 mA; V CE = -5V 50 IC = -10mA; VCE = 5V 60 IC =- 50 mA; VCE =5V 50 IC = -10 mA; IB = -1.0 m A − -0.2 V IC =--50 mA; IB = -5.0 m A -0.5 IC =-10mA; IB=-1.0mA − − -1.0 V V IC =--50 mA; IB = -5.0 m A − -1.0 V IE = ie = 0; VCB = - 1 0 V; f = 1 MHz − 6.0 pF 240 − VCE=-10V,IC=-1.0mA,f=1.0KHz 40 200 300 MHz 8.0 dB fT transition frequency IC =- 50 mA; VCE = 1 0 V; f = 1.0 MHz 100 F noise Þgure IC = 200 µA; VCE = 5 V; RS = 1 0 Ω; f =10Hz to 15.7KHz −