CHENMKO ENTERPRISE CO.,LTD CHUMH3PT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * * * * SC-88/SOT-363 Low colloector-emitter saturation. High saturation current capability. Two CHDTC143T chips in one package. Built in bias resistor(R1=4.7kΩ, Typ. ) (1) (6) 0.65 1.2~1.4 2.0~2.2 0.65 (4) 0.15~0.35 (3) 1.15~1.35 0.8~1.1 0.08~0.15 0~0.1 0.1 Min. CIRCUIT 6 4 2.15~2.45 R1 R1 1 3 SC-88/SOT-363 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage 50 V VCEO Collector-Emitter voltage 50 V VEBO Emitter-Base voltage 5 V IC(Max.) Coll ector current 100 mA PD Power dissipation 150 mW TSTG Storage temperature −55 ∼ +150 TJ Junction temperature 150 Tamb ≤ 25 OC, Note 1 O C O C Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-03 RATING CHARACTERISTIC ( CHUMH3PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage BVCEO Collector-Emitter breakdown voltage IC=1mA BVEBO Emitter-Base breakdown voltage IE=50uA IC=50uA MIN. TY P . MAX. UNIT 50.0 − − V 50.0 − − V 5.0 − − − V VCE(sat) Collector-Emitter Saturation voltage IC=5mA; IB=0.25mA − 0.3 V ICBO Collector-Base current VCB=50V − − 0.5 uA IEBO Emitter-Base current VEB=4V − − 0.5 uA hFE DC current gain IC=1mA; VCE=5.0V 100 250 600 R1 fT Input resistor Transition frequency 3.29 − 4.7 250 6.11 − Note 1.Pulse test: tp≤300uS; δ≤0.02. IE=-5mA, VCE=10.0V f=100MHz = KΩ MHz RATING CHARACTERISTIC CURVES ( CHUMH3PT ) Fig.1 DC current gain vs. collector current 1k DC CURRENT GAIN : hFE 500 VCE=-5V O Ta=100 C 200 100 25OC O -40 C 50 20 10 5 2 1 -100 -500 −1m -5m -10m -50m -100m COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Typical Electrical Characteristics Fig.2 Collector-emitter saturation voltage vs. collector current 1 lC/lB=20 500m 200m 100m 50m 20m 100OC 25OC -40 OC 10m 5m 2m 1m 100u 500u 1m 5m 10m COLLECTOR CURRENT : IC (A) 50m 100m