CM200DX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT NX-Series Module 200 Amperes/1200 Volts AR AS A D E F G H J L AN AP AQ J DETAIL "A" S AE AF Y (4 PLACES) 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Q K ST 47 U 24 Z R S T Q 48 U AA B AB 23 DETAIL "B" 1 W V X M AD 2 3 4 5 6 7 8 N K AK Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 AG AY 9 10 11 12 13 14 15 16 17 18 19 20 21 22 P K AJ AH AC (4 PLACES) AT AU AL AM DETAIL "A" C AX C2E1(24) C2E1(23) Th NTC Cs1(22) Tr2 Di2 Di1 G2(38) Es2(39) Tr1 Es1(16) G1(15) TH1 (1) AV AW TH2 (2) DETAIL "B" E2 (47) C1 (48) Outline Drawing and Circuit Diagram Dimensions Inches A 5.98 B 2.44 C 0.67+0.04/-0.02 D 5.39 E 4.79 F 4.33±0.02 G 3.89 H 3.72 J 0.53 K 0.15 L 1.64 M 0.30 N 1.95 P 0.9 Q 0.55 R 0.87 S 0.67 T 0.48 U 0.24 V 0.16 W 0.37 X 0.83 Y M6 Z 1.53 05/13 Rev. 5 Millimeters 152.0 62.0 17.0+1.0/-0.5 137.0 121.7 110.0±0.5 99.0 94.5 13.5 3.81 41.66 7.75 49.53 22.86 14.0 22.0 17.0 12.0 6.0 4.2 6.5 21.14 M6 39.0 Dimensions AA AB AC AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX AY Inches 1.97±0.02 2.26 0.22 Dia. 0.6 0.51 0.27 0.03 0.81 0.12 0.14 0.26 0.53 0.15 0.05 0.025 0.29 0.05 0.17 Dia. 0.102 Dia. 0.088 Dia. 0.12 0.49 0.14 Millimeters 50.0±0.5 57.5 5.5 Dia. 15.0 13.0 7.0 0.8 20.5 3.0 3.5 6.5 13.5 3.81 1.15 0.65 7.4 1.2 4.3 Dia. 2.6 Dia. 2.25 Dia. 3.0 12.5 3.75 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM200DX-24S is a 1200V (VCES), 200 Ampere Dual IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 200 24 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200DX-24S Dual IGBT NX-Series Module 200 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts IC 200 Amperes ICRM 400 Amperes Ptot 1500 Watts Collector Current (DC, TC = 119°C)*2,*4 Collector Current (Pulse)*3 Total Power Dissipation (TC = 25°C)*2,*4 Emitter Current (TC = 25°C)*2 *1 IE Emitter Current (Pulse)*3 200 Amperes IERM*1 400 Amperes Symbol Rating Units VISO 2500 Volts Tj(max) 175 °C Module Characteristics Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Maximum Junction Temperature, Instantaneous Event (Overload) TC(max) 125 °C Operating Junction Temperature, Continuous Operation (Under Switching) Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 47 29.1 38.1 24 Di2 Di1 Tr2 Th Tr1 48 1 2 3 4 5 6 7 8 28.2 41.7 23 9 10 11 12 13 14 15 16 17 18 19 20 21 22 78.4 27.9 41.4 LABEL SIDE 37.4 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 0 Maximum Case Temperature*4 Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. 2 05/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200DX-24S Dual IGBT NX-Series Module 200 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts (Terminal) IC = 200A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts IC = 200A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IC = 200A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts 150°C*5 — 1.95 — Volts — — 20 nF — — 4.0 nF — — 0.33 nF — 466 — nC — — 800 ns IC = 200A, VGE = 15V, Tj = Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage Emitter-Collector Voltage QG VCE = 10V, VGE = 0V VCC = 600V, IC = 200A, VGE = 15V td(on) tr VCC = 600V, IC = 200A, VGE = ±15V, — — 200 ns td(off) RG = 0Ω, Inductive Load — — 600 ns — — 300 ns VEC*1 tf IE = 200A, VGE = 0V, Tj = 25°C*5 — 1.80 2.25 Volts (Terminal) IE = 200A, VGE = 0V, Tj = 125°C*5 — 1.80 — Volts IE = 200A, VGE = 0V, Tj = 150°C*5 — 1.80 — Volts VEC IE = 200A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts (Chip) IE = 200A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts — 1.70 — Volts — — 300 ns *1 IE = 200A, VGE = 0V, Tj = Reverse Recovery Time trr*1 150°C*5 VCC = 600V, IE = 200A, VGE = ±15V *1 Reverse Recovery Charge Qrr RG = 0Ω, Inductive Load — 10.7 — µC Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 200A, VGE = ±15V — 30.7 — mJ Turn-off Switching Energy per Pulse Eoff RG = 0Ω, Tj = 150°C — 21.5 — mJ Reverse Recovery Energy per Pulse Err*1 Inductive Load — 14.2 — mJ Main Terminals-Chip, — — 1.1 mΩ — 9.8 — Ω Internal Lead Resistance RCC' + EE' Per Switch,TC = 25°C*4 Internal Gate Resistance rg *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. Per Switch 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 47 29.1 38.1 24 Di2 Di1 Tr2 Th Tr1 48 1 2 3 4 5 6 7 8 28.2 41.7 23 9 10 11 12 13 14 15 16 17 18 19 20 21 22 78.4 27.9 41.4 37.4 0 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. 05/13 Rev. 5 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200DX-24S Dual IGBT NX-Series Module 200 Amperes/1200 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance ∆R/R B Constant Test Conditions TC = 25°C*4 Min. Typ. Max. Units 4.85 5.00 5.15 kΩ -7.3 — +7.8 % TC = 100°C*4, R100 = 493Ω B(25/50) — 3375 — K P25 TC = 25°C*4 — — 10 mW Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per Inverter IGBT — — 0.10 K/W Case*4 Rth(j-c)D Per Inverter FWDi Rth(c-f) Thermal Grease Applied, Power Dissipation Approximate by Equation*6 Thermal Resistance Characteristics Thermal Resistance, Junction to Contact Thermal Resistance, Case to Heatsink*4 — — — 0.19 K/W 15 — K/kW Per 1 Module*7 Mechanical Characteristics Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb Mounting Torque Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Clearance da Weight m Flatness of Baseplate ec Terminal to Terminal 11.55 — — mm Terminal to Baseplate 12.32 — — mm Terminal to Terminal 10.00 — — mm Terminal to Baseplate 10.85 — — mm — 350 — Grams — ±100 µm ±0 On Centerline X, Y*8 Recommended Operating Conditons, Ta = 25°C DC Supply Voltage VCC Applied Across P-N Terminals — 600 850 Volts Gate-Emitter Drive Voltage VGE(on) Applied Across 13.5 15.0 16.5 Volts External Gate Resistance RG — 22 Ω G1-Es1/G2-Es2 Terminals Per Switch 0 0 0 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 47 29.1 38.1 24 Di2 Di1 Tr2 Th Tr1 48 1 2 3 4 5 6 7 8 28.2 41.7 23 9 10 11 12 13 14 15 16 17 18 19 20 21 22 + : CONVEX HEATSINK SIDE – : CONCAVE 78.4 27.9 37.4 41.4 LABEL SIDE 0 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. R25 1 1 *6 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. Y Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. X – : CONCAVE + : CONVEX HEATSINK SIDE 4 05/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200DX-24S Dual IGBT NX-Series Module 200 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 3.5 Tj = 25°C 300 12 13.5 15 250 11 200 150 10 100 9 50 0 0 2 4 6 8 2.5 2.0 1.5 1.0 0.5 50 100 150 200 250 300 350 400 0 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) 103 Tj = 25°C 8 IC = 400A 6 IC = 200A 4 IC = 80A 2 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 05/13 Rev. 5 3.0 0 10 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 350 VGE = 20V EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 400 20 Tj = 25°C Tj = 125°C Tj = 150°C 102 101 0.5 1.0 1.5 2.0 2.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200DX-24S Dual IGBT NX-Series Module 200 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 VGE = 0V td(off) Cies tf 101 SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 102 Coes 100 Cres 10-1 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load tr 10-2 10-1 103 td(on) 100 101 101 101 102 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 td(off) td(on) td(off) td(on) 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load tr 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 6 103 SWITCHING TIME, (ns) SWITCHING TIME, (ns) tf tr tf 102 101 10-1 VCC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive Load 100 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 05/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200DX-24S Dual IGBT NX-Series Module 200 Amperes/1200 Volts SWITCHING TIME VS. GATE RESISTANCE (YPICAL) 103 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 SWITCHING TIME, (ns) td(off) tr tf 102 101 10-1 VCC = 600V VGE = ±15V IC = 200A Tj = 150°C Inductive Load 100 101 REVERSE RECOVERY, Irr (A), trr (ns) td(on) VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr 101 101 102 102 EXTERNAL GATE RESISTANCE, RG, (Ω) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE 103 20 102 101 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 05/13 Rev. 5 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 102 103 IC = 200A VCC = 600V 15 10 5 0 0 100 200 300 400 500 600 700 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM200DX-24S Dual IGBT NX-Series Module 200 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C 101 Eon Eoff Err 100 101 102 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Eon Eoff Err 102 103 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 101 VCC = 600V VGE = ±15V IC/IE = 200A Tj = 150°C 100 10-1 100 Eon Eoff Err 101 GATE RESISTANCE, RG, (Ω) 102 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 101 100 101 103 102 8 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C 101 VCC = 600V VGE = ±15V IC/IE = 200A Tj = 125°C 100 10-1 100 Eon Eoff Err 101 102 GATE RESISTANCE, RG, (Ω) 05/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM200DX-24S Dual IGBT NX-Series Module 200 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.10°K/W (IGBT) Rth(j-c) = 0.19°K/W (FWDi) 10-2 10-3 10-5 10-4 10-3 10-2 10-1 100 101 TIME, (s) 05/13 Rev. 5 9