CMLDM7005 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. MARKING CODE: CC7 SOT-563 CASE APPLICATIONS: • Load switch/Level shifting • Battery charging • Boost switch • Electro-luminescent backlighting FEATURES: • ESD protection up to 2kV (Human Body Model) • 350mW power dissipation • Very low rDS(ON) • Low threshold voltage • Logic level compatible • Small, SOT-563 surface mount package • Complementary dual P-Channel device: CMLDM8005 MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State - Note 1) Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 2) Operating and Storage Junction Temperature Thermal Resistance (Note 1) SYMBOL VDS VGS ID IS IDM PD PD PD TJ, Tstg ΘJA 20 8.0 650 280 1.3 350 300 150 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=4.5V, VDS=0 1.0 IDSS VDS=16V, VGS=0 100 BVDSS VGS=0, ID=250μA 20 VGS(th) VDS=VGS, ID=250μA 0.5 1.1 VSD VGS=0, IS=200mA 1.1 rDS(ON) VGS=4.5V, ID=600mA 0.14 0.23 rDS(ON) VGS=2.5V, ID=500mA 0.2 0.275 rDS(ON) VGS=1.8V, ID=350mA 0.7 gFS VDS=10V, ID=400mA 1.0 UNITS V V mA mA A mW mW mW °C °C/W UNITS μA nA V V V Ω Ω Ω S Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R3 (10-June 2013) CMLDM7005 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS Crss VDS=16V, VGS=0, f=1.0MHz 18 pF Ciss VDS=16V, VGS=0, f=1.0MHz 100 pF Coss VDS=16V, VGS=0, f=1.0MHz 16 pF Qg(tot) VDS=10V, VGS=4.5V, ID=500mA 1.58 nC Qgs VDS=10V, VGS=4.5V, ID=500mA 0.17 nC Qgd VDS=10V, VGS=4.5V, ID=500mA 0.24 nC ton VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω 10 ns toff VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω 25 ns SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: CC7 R3 (10-June 2013) w w w. c e n t r a l s e m i . c o m CMLDM7005 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET N-CHANNEL TYPICAL ELECTRICAL CHARACTERISTICS R3 (10-June 2013) w w w. c e n t r a l s e m i . c o m