CMLT5088EM SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE(ON) characteristics. This device is designed for applications requiring high gain and low noise. MARKING CODE: 88M SOT-563 CASE FEATURES: • Transistor pair matched for VBE(ON) • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: SYMBOL TEST CONDITIONS ICBO VCB=20V IEBO VEB=3.0V BVCBO IC=100μA BVCEO IC=1.0mA BVEBO IE=100μA VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=10mA, IB=1.0mA hFE VCE=5.0V, IC=0.1mA hFE VCE=5.0V, IC=1.0mA hFE VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=100mA fT VCE=5.0V, IC=500μA, f=20MHz Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hfe VCE=5.0V, IC=1.0mA, f=1.0kHz NF VCE=5.0V, IC=100μA, RS=10kΩ f=10Hz to 15.7kHz MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS |VBE1-VBE2| VCE=5.0V, IC=1.0μA |VBE1-VBE2| VCE=5.0V, IC=5.0μA |VBE1-VBE2| VCE=5.0V, IC=10μA |VBE1-VBE2| VCE=5.0V, IC=100μA 50 50 5.0 100 350 -65 to +150 357 (TA=25°C unless otherwise noted) MIN TYP MAX 50 50 50 135 50 65 5.0 8.7 45 100 110 400 700 800 300 430 900 300 435 300 430 50 125 100 4.0 15 350 1400 3.0 MIN MAX 10 10 10 10 UNITS V V V mA mW °C °C/W UNITS nA nA V V V mV mV mV MHz pF pF dB UNITS mV mV mV mV R3 (29-June 2015) CMLT5088EM SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: 88M R3 (29-June 2015) w w w. c e n t r a l s e m i . c o m CMLT5088EM SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR SERVICES • Bonded Inventory • Custom Electrical Screening • Custom Electrical Characteristic Curves • SPICE Models • Custom Packaging • Package Base Options • Custom Device Development / Multi Discrete Modules (MDM™) • Bare Die Available for Hybrid Applications LIMITATIONS AND DAMAGES DISCLAIMER: In no event shall Central be liable for any collateral, indirect, punitive, incidental, consequential, or exemplary damages in connection with or arising out of a purchase order or contract or the use of products provided hereunder, regardless of whether Central has been advised of the possibility of such damages. Excluded damages shall include, but not be restricted to: cost of removal or reinstallation, rework, ancillary costs to the procurement of substitute products, loss of profits, loss of savings, loss of use, loss of data, or business interruption. No claim, suit, or action shall be brought against Central more than two (2) years after the related cause of action has occurred. In no event shall Central’s aggregate liability from any warranty, indemnity, or other obligation arising out of or in connection with a purchase order or contract, or any use of any Central product provided hereunder, exceed the total amount paid to Central for the specific products sold under a purchase order or contract with respect to which losses or damages are claimed. The existence of more than one (1) claim against the specific products sold to Buyer under a purchase order or contract shall not enlarge or extend this limit. Buyer understands and agrees that the foregoing liability limitations are essential elements of a purchase order or contract and that in the absence of such limitations, the material and economic terms of the purchase order or contract would be substantially different. R3 (29-June 2015) w w w. c e n t r a l s e m i . c o m