CMS10 TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE CMS10 Unit:mm 2 0 .6 5 3 .8 ●Forward Voltage ：VFM=0.55V(Max.) ●Average Forward Current ：IF(AV)=1.0A ●Repetitive Peak Reverse Voltage ：VRRM=40V ●Small & Thin Package 4 .7 0 .6 5 ○ SWITHING MODE POWER SUPPLY APPLICATIONS ○ PORTABLE EQUIPMENT BATTERY APPLICATIONS Peak Reverse Average Forward Current *1 Peak One Cycle Surge Forward Current(Non-Repetitive) Junction Temperature RATING UNIT 40 V IF(AV) 1.0 (Ta=21℃) A IFSM 25(50Hz) A Tj Tstg -40～150 ℃ Storage Temperature -40～150 *1 Glass-epoxy Substrate(Substrate size:50mm*50mm Soldering land:6mm*6mm) ℃ 1.7 1 2 .4 1 :A n o d e 0 .9 8 Repetitive 0 .1 6 SYMBOL Voltage VRRM 0〜 0.1 ● MAXIMUM RATINGS CHARACTERISTIC 2 :C a th o d e - JEDEC EIAJ TOSHIBA Weight:0.023g ● ELECTRICAL CHARACTERISTICA(Ta=25℃ ℃) CHARACTERISTIC SYMBOL Peak Forward Voltage Repetitive Peak Reverse Current Junction Capacitance Thermal Resistance TEST CONDITION MIN. TYP. MAX. UNIT VFM(1) IFM=0.1A - 0.34 - V VFM(2) IFM=0.5A - 0.41 - V VFM(3) IFM=1.0A - 0.47 0.55 V IRRM VRRM=5V - 1.0 - μA IRRM VRRM=40V - 8.0 500 μA VR=10V,f=1.0MHz - 50 - pF - - 60 - - 135 - - 16 Cj On ceramic substrate (Solderring Land 2mm×2mm) Rth(j-a) On glass-epoxy substrate (Solderrring Land 6mm×6mm) Rth(j-l) - TOSHIBA is continually working to improve the quality and the reliability of its products.nevertheless,semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,when utilizing TOSHIBA products, to observe standards of safety,and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life,bodily injury or damage to property.In developing your designs,plese ensure that TOSHIBA products are used within specified operating ranqes as set forth in the most recent products specifications.Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 2000-07-18 1/4 ℃/W ℃/W ℃/W CMS10 Standard Soldering pad 2.1 Unit:mm 1.4 3.0 1.4 HANDLING PRECAUTION Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products.This current leakage and not proper operating temperature or voltage may cause thermal run. Please take forward and reverse loss into consideration when you design. 2000-07-18 2/4 CMS10 iF-vF PF(AV)-IF(AV) AVERAGE FORWARD POWER DISSIPATION PF(AV) (W) 0.8 Tj=150℃ ℃ iF (A) INSTANTANEOUS FORWARD CURRENT 10 125℃ ℃ 1 75℃ ℃ 25℃ ℃ 0.1 DC 0.7 α =180° 0.6 α =120° 0.5 α =60° 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 1.2 1.4 140 140 120 α =180° 80 α =120° DC 60 α =60° 20 0 DC 120 100 80 α =180° α =60° α =120° 60 40 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE FORWARD CURRENT IF(AV) (A) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE FORWARD CURRENT IF(AV) (A) rth(j-a) - t TRANSIENT THERMAL IMPEDANCE ℃ /W) rth(j-a) (℃ 1000 ON GLASS-EPOXY SUBSTRATE Soldering Land 2.1mm×1.4mm 100 10 ON GLASS-EPOXY SUBSTRATE Soldering Land 6mm×6mm ON CERAMIC SUBSTRATE Soldering Land 2mm×2mm 1 0.1 0.001 1.6 On Ceramic Substrate(size:50mm*50mm) MAXIMUM ALLOWABLE AMBIENT ℃) TEMPERATURE Ta MAX (℃ MAXIMUM ALLOWABLE AMBIENT ℃) TEMPERATURE Ta MAX (℃ 1.0 Ta Max - IF (AV) 160 0.0 0.8 Ta Max - IF (AV) On Glass-epoxy Substrate(size:50mm*50mm,land size:6mm*6mm) 40 0.6 AVERAGE FORWARD CURRENT IF(AV) (A) 160 100 0.4 INSTANTANEOUS FORWARD VOLTAGE VF (v) 0.01 0.1 1 TIME t (s) 10 100 1000 2000-07-18 3/4 CMS10 SURGE FORWARD CURRENT (NON-REPETITIVE) 24 JUNCTION CAPACITANCE Cj (pF) PEAK SURGE FORWARD CURRENT IFSM (A) Ta=25℃ ℃ f=50Hz 20 16 12 8 4 f=1MHz Ta=25℃ ℃ 100 0 10 1 10 100 1 NUMBER OF CYCLES IR-T j 10 100 REVERSE VOLTAGE VR (V) (TYPICAL) PR(AV) - VR (TYPICAL) 0.8 PULSE MEASUREMENT 10 1 VR=40V VR=30V 0.1 VR=20V VR=15V VR=10V 0.01 VR=5V 0.001 AVERAGE REVERSE POWER DISSIPATION ） PR(AV) （ W） 100 REPETITIVE PEAK REVERSE CURRENT IR (mA) （TYPICAL） Cj-VR 1000 28 0.7 DC 0.6 300° 0.5 240° 0.4 180° 0.3 120° 0.2 60° 0.1 0.0 0.0001 0 20 40 60 80 100 120 ℃) JUNCTION TEMPERATURE T j (℃ 140 160 0 10 20 30 REVERSE VOLTAGE VR （ V) 2000-07-18 4/4 40