Transmissive Photosensors (Photo lnterrupters) CNA1012K (ON1114) Photo lnterrupter Unit: mm For contactless SW, object detection ■ Overview 0.45±0.1 CNA1012K is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. A' Symbol Rating Reverse voltage VR 3 V emitting diode) Forward current IF 50 mA Power dissipation *1 PD 75 mW VCEO 30 V Emitter-collector voltage (Base open) VECO 5 V Temperature Collector current IC 20 mA Collector power dissipation *2 PC 100 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C 6.0 min. 2.0±0.2 (2.54) SEC. A-A' 3 6.2±0.2 Unit Output (Photo Collector-emitter voltage transistor) (Base open) 2-0.45±0.2 (10.0) 2 Device center 1: Anode 2: Cathode 4 1 3: Collector 4: Emitter PISTR104-013 Package (Note) ( ) Dimension is reference ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.45±0.1 2-R0.5 • Highly precise position detection: 0.3 mm • Wide gap between emitting and detecting elements, suitable for thick plate detection • Fast response: tr , tf = 6 µs (typ.) • Small output current variation against change in temperature • Large output current Input (Light 5.0±0.2 A 2.2±0.2 ■ Features 13.0±0.3 2.5±0.2 10.0±0.2 Mark for indicating LED side Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.34 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Typ Max 1.2 1.5 V VR = 3 V 10 µA VCE = 10 V 200 nA Forward voltage VF IF = 50 mA characteristics Reverse current IR Input Output Collector-emitter cutoff current characteristics (Base open) Transfer ICEO Collector-emitter capacitance CC VCE = 10 V, f = 1 MHz Collector current IC VCE = 10 V, IF = 20 mA characteristics Collector-emitter saturation voltage VCE(sat) Min 5 Unit pF 0.7 mA IF = 50 mA, IC = 0.1 mA 0.3 V Rise time * tr VCC = 10 V, IC = 1 mA 6 µs Fall time * tf RL = 100 Ω 6 µs Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit Sig. in VCC (Input pulse) Sig. out 50Ω RL 90% 10% (Output pulse) tr tr : Rise time tf : Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00019BED 1 CNA1012K IF , I C T a IF V F 60 50 IC 20 10 Collector current IC (mA) 30 40 30 20 40 60 80 0 100 0 0.4 0.8 1.6 IF = 50 mA 10 mA 0.8 0.4 0 40 2.0 10 mA 1 10 −1 80 40 0 40 ∆IC d 100 VCC = 10 V Ta = 25°C 1 10 −2 Rise time tr (µs) 102 10 V RL = 1 kΩ 500 Ω 10 100 Ω 1 10 −3 80 Ambient temperature Ta (°C ) 10 −1 10 −2 10 −1 80 Ambient temperature Ta (°C ) tr I C 103 40 120 0 −40 102 10 VCE = 10 V IF = 20 mA Collector-emitter voltage VCE (V) ICEO Ta 103 ∆IC Ta 20 mA 1 102 10 160 IF = 30 mA 10 −2 10 −1 80 10 0 1 Forward current IF (mA) Ta = 25°C 10 Ambient temperature Ta (°C ) VCE = 24 V 10 −2 2.4 IC VCE Collector current IC (mA) Forward voltage VF (V) 1.2 102 1.2 10 −4 −40 10 −1 Forward voltage VF (V) VF T a 10 −1 1 Relative collector current ∆IC (%) 20 Relative collector current ∆IC (%) 0 1.6 0 −40 10 10 Ambient temperature Ta (°C ) Collector-emitter cutoff current (Base open) ICEO (µA) VCE = 10 V Ta = 25°C 50 40 0 −25 2 10 Ta = 25°C IF Forward current IF (mA) Forward current IF , collector current IC (mA) 60 IC I F 2 1 Collector current IC (mA) SHG00019BED 10 VCE = 10 V Ta = 25°C IF = 20 mA 80 Criterion 0 d 60 40 20 0 0 1 2 3 4 Distance d (mm) 5 6 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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