CNY17-1X, CNY17-2X, CNY17-3X, CNY17-4X, CNY17-5X CNY17-1, CNY17-2, CNY17-3, CNY17-4, OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS z UL recognised, File No. E91231 Package System GG 'X' SPECIFICATION APPROVALS z VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 z Dimensions in mm 2.54 7.0 6.0 1 2 6 5 3 4 1.2 7.62 6.62 Certified to EN60950 by 7.62 4.0 3.0 Nemko - Certificate No. P01102464 13° Max 0.5 3.0 DESCRIPTION 0.5 The CNY17-1, CNY17-2, CNY17-3, CNY17-4, CNY17-5 series of optically coupled isolators consist of an infrared light emitting diode and a NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High BVCEO (70V min) z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z DC motor controllers z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances OPTION G OPTION SM SURFACE MOUNT 7.62 3.35 0.26 ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Collector Current Power Dissipation 70V 70V 7V 50mA 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) 10.16 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1UD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 17/7/08 DB91081 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 1.65 V IF = 60mA 10 μA VR = 6V 50 V V V nA IC = 1mA ( Note 2 ) IC = 100μA IE = 100μA VCE = 10V 80 125 200 320 400 % % % % % 10mA IF , 5V VCE 10mA IF , 5V VCE 10mA IF , 5V VCE 10mA IF , 5V VCE 10mA IF , 5V VCE 0.4 V 10mA IF , 2.5mA VRMS Ω See note 1 VIO = 500V (note 1) 70 70 7 Current Transfer Ratio (CTR) (Note 2) CNY17-1 CNY17-2 CNY17-3 CNY17-4 CNY17-5 40 63 100 160 200 Collector-emitter SaturationVoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 Input-output Isolation Resistance RISO 5x1010 Note 1 Note 2 TEST CONDITION Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. TYPICAL SWITCHING CHARACTERISTICS 1. Linear Operation (without saturation) Fig 1. IF = 10mA, VCC = 5V, RL = 75Ω UNITS Turn-on Time Rise Time Turn-off Time Fall Time Cut-off Frequency ton tr toff tf FCO VCC = 5.0V OUTPUT FIG 1 VCC = 5V, RL = 1kΩ -1 -4 -2 and -3 (IF=20mA) (IF=10mA) (IF=5mA) GROUP μs μs μs μs kHz Turn-on Time ton tr Rise Time Turn-off Time toff tf Fall Time VCESAT 4.2 3.0 23 14 < 0.4 3.0 2.0 18 11 6.0 4.6 25 15 UNITS μs μs μs μs V INPUT VCC = 5.0V RL = 75Ω 17/7/08 3.0 2.0 2.3 2.0 250 2. Switching Operation (with saturation) Fig 2 toff ton RL = 1kΩ tr OUTPUT tf OUTPUT 10% 10% 90% 90% FIG 2 DB91081m-AAS/A8 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage ( normalised to CNY17-3 ) TA = 25°C 50 Collector current IC (mA) Collector power dissipation PC (mW) 200 150 100 50 40 50 30 30 20 20 10 10 IF = 5mA 0 0 -30 0 25 50 75 100 0 125 Forward Current vs. Ambient Temperature 80 320 70 280 60 50 40 30 20 10 0 6 8 10 VCE = 5V TA = 25°C CNY17-5 240 CNY17-4 200 160 CNY17-3 120 CNY17-2 80 40 CNY17-1 0 -30 0 25 50 75 100 1 125 2 5 Ambient temperature TA ( °C ) IF = 10mA VCE = 5V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 100 Collector-emitter saturation voltage VCE(SAT) (V) 1.5 10 20 50 Forward current IF (mA) Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio 4 Current Transfer Ratio vs. Forward Current Current transfer ratio CTR (%) Forward current IF (mA) 2 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( °C ) 17/7/08 15 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.28 0.24 IF = 10mA IC = 2.5mA 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB91081m-AAS/A8