CLARE CPC7582BBTR

Not for New Designs
CPC7582
Line Card Access Switch
Features
Description
• Small 16-pin SOIC and 16-pin DFN
• DFN package printed-circuit board footprint is 60
percent smaller than the SOIC version, 70 percent
smaller than 4th generation EMR solutions.
• Monolithic IC reliability
• Low matched RON
• Eliminates the need for zero cross switching
• Flexible switch timing to transition from ringing mode
to talk mode.
• Clean, bounce-free switching
• Tertiary protection consisting of integrated current
limiting, voltage clamping, and thermal shutdown for
SLIC protection
• 5 V operation with power consumption < 10 mW
• Intelligent battery monitor
• Latched logic-level inputs, no external drive circuitry
required
• SOIC version is pin compatible with Agere product
The CPC7582 is a monolithic solid-state switch in a
16-pin SOIC or DFN surface-mount package. It
provides the necessary functions to replace two
2-Form-C electro-mechanical relays on traditional
analog and integrated voice and data (IVD) line cards
found in Central Office, Access, and PBX equipment.
The device contains solid state switches for tip and
ring line break, ringing injection/ringing return and test
access. The CPC7582 requires only a +5V supply and
offers break-before-make or make-before-break switch
operation using simple logic-level input control.
Applications
CPC7582 part numbers are specified as shown here:
•
•
•
•
•
•
•
•
B - 16-pin SOIC delivered 50/Tube, 1000/Reel
M - 16-pin DFN delivered 52/Tube, 1000/Reel
The CPC7582xC logic states differ from the
CPC7582xA/B. See “Functional Description” on
page 12 for more information. The CPC7582xC also
has a higher trigger and hold current for the protection
SCR.
Ordering Information
Central office (CO)
Digital Loop Carrier (DLC)
PBX Systems
Digitally Added Main Line (DAML)
Hybrid Fiber Coax (HFC)
Fiber in the Loop (FITL)
Pair Gain System
Channel Banks
CPC7582 x x xx
TR - Add for Tape & Reel Version
A - With Protection SCR
B - Without Protection SCR
C - With Protection SCR with higher trigger and hold currents
and “Monitor Test State”
Figure 1. CPC7582 Block Diagram
+5 Vdc
TTEST
4 TRING
5
SW5
Tip
TLINE
SW3
X
3
6 VDD
CPC7582
X
2 TBAT
X
SW1
Secondary
Protection
Ring
SLIC
X
SW6
SW4
12
VBAT
13
300Ω
(min.)
VREF
SCR and
Trip Circuit
(CPC7582xB/C)
X
X
RTEST
15 RBAT
SW2
RLINE 14
1
FGND
16
VBAT
8
DGND
9
INTEST
10
INRINGING
11
LATCH
7
TSD
Pb
RINGING
DS-CPC7582-R05
L
A
T
C
H
Switch
Control
Logic
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RoHS
2002/95/EC
e3
1
CPC7582
1 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Package Pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Pinout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.4 ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.5 General Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.6 Switch Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.6.1 Break Switches, SW1 and SW2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.6.2 Ringing Return Switch, SW3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1.6.3 Ringing Switch, SW4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1.6.4 Test Switches, SW5 and SW6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1.7 Additional Electrical Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
1.8 Protection Circuitry Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1.9 CPC7582xA/B Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1.10 CPC7582xC Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2 Functional Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.1.1 CPC7582xA/B Logic States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.1.2 CPC7582xC Logic States: . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2 Switch Logic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.1 Make-Before-Break Operation - All Versions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.2 Make-Before-Break Operation for All Versions (Ringing to Talk Transition). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.3 Break-Before-Make Operation - CPC7582xA/B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.4 Break-Before-Make Operation CPC7582xA/B (Ringing to Talk Transition) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.5 Break-Before-Make Operation - All Versions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2.6 Break-Before-Make Operation for all Version (Ringing to Talk Transition). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.3 Data Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.4 Thermal Shutdown. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5 Ringing Switch Zero-Cross Current Turn Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.6 Power Supplies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.7 Battery Voltage Monitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.8 Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.8.1 Diode Bridge/SCR. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.8.2 Current Limiting function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.9 Temperature Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.10 External Protection Elements. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
12
12
12
12
13
13
13
13
13
14
14
14
14
15
15
15
15
15
15
16
3 Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1 Mechanical Dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1.1 16-Pin SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1.2 16-Pin DFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2 Printed-Circuit Board Land Patterns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2.1 16-Pin SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2.2 16-Pin DFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.3 Tape and Reel Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.3.1 16-Pin SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.3.2 16-Pin DFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.4 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.4.1 Moisture Reflow Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.4.2 Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.5 Washing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17
17
17
17
18
18
18
18
18
19
19
19
19
19
2
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R05
CPC7582
1. Specifications
1.1 Package Pinout
1.2 Pinout
CPC7582
Pin
Name
FGND
1
16 VBAT
1
FGND
Fault ground
TBAT
2
15 RBAT
2
TBAT
Tip lead to the SLIC
TLINE
3
14
RLINE
3
TLINE
Tip lead of the line side
TRINGING
4
13
RRINGING
TTEST
5
VDD
TSD
4
TRINGING Ringing generator return
5
TTEST
12 RTEST
6
VDD
+5 V supply
6
11 LATCH
7
TSD
Temperature shutdown pin
7
10
INRINGING
8
DGND
Digital ground
9
INTEST
Logic control input
DGND 8
9
INTEST
10
Tip lead of the test bus
INRINGING Logic control input
11
LATCH
Data latch enable control input
12
RTEST
Ring lead of the test bus
13
R05
Description
RRINGING Ringing generator source
14
RLINE
Ring lead of the line side
15
RBAT
Ring lead to the SLIC
16
VBAT
Battery supply
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3
CPC7582
1.3 Absolute Maximum Ratings
Parameter
+5 V power supply (VDD)
1.4 ESD Rating
Minimum Maximum
Unit
ESD Rating (Human Body Model)
1000 V
-0.3
7
V
Battery Supply
-
-85
V
DGND to FGND
separation
-5
+5
V
Logic input voltage
-0.3
VDD +0.3
V
Logic input to switch output
isolation
-
320
V
Switch open-contact
isolation (SW1, SW2, SW3,
SW5, SW6)
-
320
V
Switch open-contact
isolation (SW4)
-
465
V
Operating relative humidity
5
95
%
Operating temperature
-40
+110
°C
Storage temperature
-40
+150
°C
1.5 General Conditions
Unless otherwise specified, minimum and maximum
values are production testing requirements.
Typical values are characteristic of the device at 25°C
and are the result of engineering evaluations. They are
provided for informational purposes only and are not
part of the manufacturing testing requirements.
Specifications cover the operating temperature range
TA = -40°C to +85°C. Also, unless otherwise specified
all testing is performed with VDD = +5Vdc, logic low
input voltage is 0Vdc and logic high input voltage is
+5Vdc.
Absolute maximum electrical ratings are at 25°C.
Absolute maximum ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at these or
any other conditions beyond those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to the absolute maximum ratings for
an extended period may degrade the device and affect its
reliability.
4
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R05
CPC7582
1.6 Switch Specifications
1.6.1 Break Switches, SW1 and SW2
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Unit
1
μA
Off-state leakage current
+25° C
VSW (differential) = -320 V to GND
VSW (differential) = +260 V to -60 V
+85° C
VSW (differential) = -330 V to GND
VSW (differential) = +270 V to -60 V
-40° C
VSW (differential) = -310 V to GND
VSW (differential) = +250 V to -60 V
0.1
ISW
-
0.3
0.1
RON
+25° C
+85° C
-40° C
RON match
ISW = ±10 mA, ±40 mA,
RBAT and TBAT = -2 V
14.5
-
20.5
28
10.5
-
0.15
0.8
-
300
-
80
160
-
-
400
425
-
2.5
-
A
1
μA
-
V/μs
RON
-
Per on-resistance test condition of
SW1, SW2.
Magnitude RON SW1 - RONSW2
Δ RON
Ω
DC current limit
+25° C
+85° C
VSW (on) = ±10 V
-40° C
Dynamic current limit
(t ≤ 0.5 μs)
ISW
Break switches on, all other switches
off, apply ±1 kV 10x1000 μs pulse with
appropriate protection in place.
mA
Logic input to switch output isolation
+25° C
VSW (TLINE, RLINE) = ±320 V, logic
inputs = GND
+85° C
VSW (TLINE, RLINE) = ±330 V, logic
inputs = GND
-40° C
VSW (TLINE, RLINE) = ±310 V, logic
inputs = GND
dv/dt sensitivity
R05
-
0.1
ISW
-
0.3
0.1
-
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200
5
CPC7582
1.6.2 Ringing Return Switch, SW3
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Unit
1
μA
Off-state leakage current
+25° C
VSW (differential) = -320 V to GND
VSW (differential) = +260 V to -60 V
+85° C
VSW (differential) = -330 V to GND
VSW (differential) = +270 V to -60 V
-40° C
VSW (differential) = -310 V to GND
VSW (differential) = +250 V to -60 V
0.1
ISW
-
0.3
0.1
RON
+25° C
+85° C
ISW (on) = ±0 mA, ±10 mA
RON
-
-40° C
60
-
85
100
45
-
Ω
DC current limit
+25° C
+85° C
VSW (on) = ±10 V
-40° C
Dynamic current limit
(t ≤ 0.5 μs)
-
135
70
85
210
ISW
Ringing switches on, all other switches
off, apply ±1 kV 10x1000 μs pulse, with
appropriate protection in place.
-
mA
-
2.5
A
Logic input to switch output isolation
+25° C
VSW (TRINGING, TLINE) = ±320 V, logic
inputs = GND
+85° C
VSW (TRINGING, TLINE) = ±330 V, logic
inputs = GND
-40° C
VSW (TRINGING, TLINE) = ±310 V, logic
inputs = GND
dv/dt sensitivity
6
-
0.1
ISW
-
0.3
1
μA
-
V/μs
0.1
-
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200
R05
CPC7582
1.6.3 Ringing Switch, SW4
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Unit
1
μA
1.5
3
V
0.1
0.25
mA
ISW
-
150
mA
Off-state leakage current
+25° C
VSW (differential) = -255 V to +210 V
VSW (differential) = +255 V to -210 V
+85° C
VSW (differential) = -270 V to +210 V
VSW (differential) = +270 V to -210 V
-40° C
VSW (differential) = -245 V to +210 V
VSW (differential) = +245 V to -210 V
On Voltage
ISW (on) = ± 1 mA
Ringing generator
current to ground
0.05
ISW
0.1
0.05
VSW
Ringing switches on, inputs set for
ringing mode
IRINGING
On steady-state current* Inputs set for ringing mode
-
Surge current*
Ringing switches on, all other switches
off, apply ±1 kV 10 x 1000 μs pulse,
with appropriate protection in place.
-
-
2
A
Release current
-
IRINGING
300
-
μA
RON
10
15
Ω
1
μA
-
V/μs
RON
ISW (on) = ±70 mA, ±80 mA
Logic input to switch output isolation
+25° C
VSW (RRINGING, RLINE) = ±320 V, logic
inputs = gnd
+85° C
VSW (RRINGING, RLINE) = ±330 V, logic
inputs = gnd
-40° C
VSW (RRINGING, RLINE) = ±310 V, logic
inputs = gnd
dv/dt sensitivity
-
0.1
ISW
-
0.3
0.1
-
200
*Secondary protection and ringing source current limiting must prevent exceeding this parameter.
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7
CPC7582
1.6.4 Test Switches, SW5 and SW6
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Unit
1
μA
Off-state leakage current
+25° C
VSW (differential) = -320 V to GND
VSW (differential) = +260 V to -60 V
+85° C
VSW (differential) = -330 V to GND
VSW (differential) = +270 V to -60 V
-40° C
VSW (differential) = -310 V to GND
VSW (differential) = +250 V to -60 V
0.1
ISW
-
0.3
0.1
RON
+25° C
+85° C
-40° C
ISW(ON) = ±10 mA, ±40 mA,
TBAT = -2 V
RON
38
-
46
70
28
-
-
175
-
80
110
-
-
210
250
-
2.5
-
A
1
μA
-
Ω
DC current limit
+25° C
+85° C
VSW (on) = ±10 V
-40° C
Dynamic current limit
(t ≤ 0.5 μs)
ISW
Test switches on, all other switches off,
apply ±1 kV at 10x1000 μs pulse, with
appropriate protection in place.
mA
Logic input to switch output isolation
+25° C
VSW (TTEST, TLINE) = ±320 V,
logic inputs = gnd
+85° C
VSW (TTEST, TLINE) = ±330 V,
logic inputs = gnd
-40° C
VSW (TTEST, TLINE) = ±310 V,
logic inputs = gnd
8
0.1
ISW
-
0.3
0.1
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CPC7582
1.7 Additional Electrical Characteristics
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Input low voltage
-
VIL
-
-
1.5
Input high voltage
-
VIH
3.5
-
-
IIH
-
0.1
1
Unit
Digital input characteristics
Input leakage current
(high)
VDD = 5.5 V, VBAT = -75 V, VIH = 5 V
Input leakage current
(low)
VDD = 5.5 V, VBAT = -75 V, VIL = 0 V
V
μA
IIL
-
0.1
1
Voltage Requirements
VDD
-
VDD
4.5
5.0
5.5
V
VBAT1
-
VBAT
-19
-48
-72
V
1
VBAT is used only for internal protection circuitry. If VBAT goes more positive than -10 V, the device will enter the all-off state and will remain in the all-off state until
the battery goes more negative than -15 V
Power requirements
Power consumption in
talk and all-off states
Power consumption in
all other states
VDD current in talk and
all-off states
VDD current in all other
states
VDD = 5 V, VBAT = -48 V, measure IDD
and IBAT
-
5.5
10
P
IDD
mW
-
6.5
10
1.1
2.0
VDD = 5 V, VBAT = -48 V
mA
IDD
-
1.3
2.0
IBAT
VBAT current in any state VDD = 5 V, VBAT = -48 V
Temperature Shutdown Requirements (temperature shutdown flag is active low)
0.1
10
μA
Shutdown activation
temperature
Shutdown circuit
hysteresis
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Not production tested - limits are
guaranteed by design and Quality
Control sampling audits.
TTSD_on
110
125
150
°C
TTSD_off
10
-
25
°C
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CPC7582
1.8 Protection Circuitry Electrical Specifications
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
2.1
3
Unit
Parameters Related to the Diodes in the Diode Bridge
Voltage drop at
continuous current
(50/60 Hz)
Apply ± dc current limit of break
switches
Forward
Voltage
-
Voltage drop at surge
current
Apply ± dynamic current limit of
break switches
Forward
Voltage
-
5
-
-
-
-
*
-
60 (CPC7582xA, xB)
70 (CPC7582xC)
-
T=+85°C
-
35 (CPC7582xA, xB)
40 (CPC7582xC)
-
T=+25°C
-
100 (CPC7582xA, xB)
135 (CPC7582xC)
-
60 (CPC7582xA, xB) 70 (CPC7582xA, xB)
110 (CPC7582xC)
115 (CPC7582xC)
-
V
Parameters Related to the Protection SCR
Surge current
T=+25°C
ITRIG
Trigger current
IHOLD
Hold current
T=+85°C
Gate trigger voltage
A
mA
VTBAT or
VRBAT
VBAT -4
-
VBAT -2
V
IVBAT
-
-
1.0
μA
0.5 A, t = 0.5 μs
VTBAT or
VRBAT
-
-3
-
V
2.0 A, t = 0.5 μs
VTBAT or
VRBAT
-
-5
-
V
IGATE = ITRIGGER**
Reverse leakage current VBAT = -48 V
On-state voltage
*Passes GR1089 and ITU-T K.20 with appropriate secondary protection in place.
**VBAT must be capable of sourcing ITRIGGER for the internal SCR to activate.
1.9 CPC7582xA/B Truth Table
INRINGING
INTEST
Talk
0
0
Test
0
1
Ringing
1
0
State
LATCH
0
All Off
1
1
Latched
X
X
1
All off
X
X
X
TSD
1 or
Floating1
Break
Switches
Ringing
Switches
Test
Switches
On
Off
Off
Off
Off
On
Off
On
Off
Off
Off
Off
Unchanged
02
Off
Off
Off
1
If TSD is tied high, thermal shutdown is disabled. If TSD is left floating, the thermal shutdown mechanism functions normally.
2
Forcing TSD to ground overrides the logic input pins and forces an all off state.
10
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CPC7582
1.10 CPC7582xC Truth Table
INRINGING
INTEST
Talk
0
0
Test/Monitor
0
1
Ringing
1
0
State
LATCH
0
Ringing Test
1
1
Latched
X
X
1
All off
X
X
X
TSD
1 or
Floating1
Break
Switches
Ringing
Switches
Test
Switches
On
Off
Off
On
Off
On
Off
On
Off
On
On
Off
Unchanged
02
Off
Off
Off
1If T is tied high, thermal shutdown is disabled. If T is left floating, the thermal shutdown mechanism functions normally.
SD
SD
2Forcing T to ground overrides the logic input pins and forces an all off state.
SD
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11
CPC7582
2. Functional Description
2.1 Introduction
2.1.1 CPC7582xA/B Logic States
• Talk. Break switches SW1 and SW2 closed, ringing
switches SW3 and SW4 open, and test switches
SW5 and SW6 open.
• Ringing. Break switches SW1 and SW2 open,
ringing switches SW3 and SW4 closed, and test
switches SW5 and SW6 open.
• Test. Break switches SW1 and SW2 open, ringing
switches SW3 and SW4 open, and loop test
switches SW5 and SW6 closed.
• All off. Break switches SW1 and SW2 open, ringing
switches SW3 and SW4 open, and test switches
SW5 and SW6 open.
2.1.2 CPC7582xC Logic States:
• Talk. Break switches SW1 and SW2 closed, ringing
switches SW3 and SW4 open, and test switches
SW5 and SW6 open.
• Ringing. Break switches SW1 and SW2 open,
ringing switches SW3 and SW4 closed, and test
switches SW5 and SW6 open.
• Test/Monitor. Break switches SW1 and SW2
closed, ringing switches SW3 and SW4 open, and
test switches SW5 and SW6 closed.
• Ringing Test. Break switches SW1 and SW2 open,
ringing switches SW3 and SW4 closed, and test
switches SW5 and SW6 closed.
• All off. Break switches SW1 and SW2 open, ringing
switches SW3 and SW4 open, and test switches
SW5 and SW6 open.
The CPC7582 offers break-before-make and makebefore-break switching from the ringing state to the
talk state with simple logic-level input control.
Solid-state switch construction means no impulse
noise is generated when switching during ring
cadence or ring trip, eliminating the need for external
zero-cross switching circuitry. State control is via
logic-level input so no additional driver circuitry is
required. The linear break switches SW1 and SW2
have exceptionally low RON and excellent matching
characteristics. The ringing switch SW4 has a
minimum open contact breakdown voltage of 480 V.
This is sufficiently high, with proper protection, to
prevent breakdown in the presence of a transient fault
condition (i.e., passing the transient on to the ringing
generator).
Integrated into the CPC7582 is an over voltage
clamping circuit, active current limiting, and a thermal
shutdown mechanism to provide protection to the
12
SLIC device during a fault condition. Positive and
negative surges are reduced by the current limiting
circuitry and hazardous potentials are diverted to
ground via diodes and, in xA/C parts, an integrated
SCR. Power-cross potentials are also reduced by the
current limiting and thermal shutdown circuits.
To protect the CPC7582 from an overvoltage fault
condition, use of a secondary protector is required.
The secondary protector must limit the voltage seen at
the tip and ring terminals to a level below the
maximum breakdown voltage of the switches. To
minimize the stress on the solid-state contacts, use of
a foldback or crowbar type secondary protector is
recommended. With proper selection of the secondary
protector, a line card using the CPC7582BC will meet
all relevant ITU, LSSGR, TIA/EIA and IEC protection
requirements.
The CPC7582 operates from a +5 V supply only. This
gives the device extremely low idle and active power
consumption and allows use with virtually any range of
battery voltage. Battery voltage is also used by the
CPC7582 as a reference for the integrated protection
circuit. In the event of a loss of battery voltage, the
CPC7582 enters the all-off state.
2.2 Switch Logic
The CPC7582 provides, when switching from the
ringing state to the talk state, the ability to control the
release timing of the ringing switches SW3 and SW4
relative to the state of the break switches SW1 and
SW2 using simple logic-level inputs. This is referred to
as make-before-break or break-before-make
operation. When the break switch contacts (SW1 and
SW2) are closed (or made) before the ringing switch
contacts (SW3 and SW4) are opened (or broken), this
is referred to as make-before-break operation.
Break-before-make operation occurs when the ringing
contacts (SW3 and SW4) are opened (broken) before
the break switch contacts (SW1 and SW2) are closed
(made). With the CPC7582, the make-before-break
and break-before-make operations can easily be
selected by applying logic-level inputs to the device.
The logic sequences for these modes of operation are
given in “Make-Before-Break Operation for All
Versions (Ringing to Talk Transition)” on page 13,
“Break-Before-Make Operation CPC7582xA/B
(Ringing to Talk Transition)” on page 13, and
“Break-Before-Make Operation for all Version (Ringing
to Talk Transition)” on page 14. Logic states and input
control settings are given in “CPC7582xA/B Truth
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CPC7582
Table” on page 10 and “CPC7582xC Truth Table” on
page 11.
2.2.1 Make-Before-Break Operation - All Versions
To use make-before-break operation, change the logic
inputs to the talk state immediately following the
ringing state. Application of the talk state opens the
ringing return switch (SW3) as the break switches
(SW1 and SW2) close. The ringing switch (SW4)
remains closed until the next zero-crossing of the
ringing supply current. While in the make-before-break
state, ringing potentials in excess of the CPC7582
protection circuitry trigger levels will be diverted to
ground.
2.2.2 Make-Before-Break Operation for All Versions (Ringing to Talk Transition)
State
INRINGING
INTEST
Ringing
1
0
Makebeforebreak
0
0
Talk
0
0
LATCH
TSD
Timing
-
0
SW4 waiting for next zero-current
crossing to turn off. Maximum time is
one-half of the ringing cycle. In this
Floating transition state, current that is limited to
the dc break switch current limit value
will be sourced from the ring node of the
SLIC.
Zero-cross current has occurred
2.2.3 Break-Before-Make Operation - CPC7582xA/B
Break-before-make operation of the CPC7582xA/B
can be achieved using two different techniques.
The first method uses manipulation of the INRINGING
and INTEST logic inputs as shown in
“Break-Before-Make Operation CPC7582xA/B
(Ringing to Talk Transition)” on page 13.
1. At the end of the ringing state apply the all off
state (0, 0). This releases the ringing return
Ringing
Ringing
Return
Break
Test
Switch
Switches Switch
Switches
(SW4)
(SW3)
Off
On
On
Off
On
Off
On
Off
On
Off
Off
Off
switch (SW3) while the ringing switch remains
on, waiting for the next zero current event.
2. Hold the all off state for at least one-half of a
ringing cycle to assure that a zero crossing event
occurs and that the ringing switch (SW4) has
opened.
Break-before-make operation occurs when the ringing
switch opens before the break switches (SW1 and
SW2) close.
2.2.4 Break-Before-Make Operation CPC7582xA/B (Ringing to Talk Transition)
State
INRINGING
INTEST
Ringing
1
0
-
Off
On
On
Off
All-Off
1
1
Hold this state for at least one-half of the
ringing cycle. SW4 waiting for zero
current to turn off.
Off
Off
On
Off
LATCH
0
TSD
Ringing
Ringing
Return
Break
Test
Switch
Switches Switch
Switches
(SW4)
(SW3)
Floating
Timing
BreakBeforeMake
1
1
SW4 has opened
Off
Off
Off
Off
Talk
0
0
Close Break Switches
On
Off
Off
Off
2.2.5 Break-Before-Make Operation - All Versions
The second break-before-make method for the
CPC7582xA/B is also the only method available for
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the CPC7582xC. As shown in “CPC7582xA/B Truth
Table” on page 10 and “CPC7582xC Truth Table” on
page 11, the bidirectional TSD interface disables all of
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13
CPC7582
the CPC7582 switches when pulled to a logic low.
Although logically disabled, if the ringing switch (SW4)
is active (closed), it will remain closed until the next
current zero crossing event.
As shown in the table “Break-Before-Make Operation
for all Version (Ringing to Talk Transition)” on page 14,
this operation is similar to the one shown in
“Break-Before-Make Operation - All Versions” on
page 13, except in the method used to select the all off
state, and in when the INRINGING and INTEST inputs
are reconfigured for the talk state.
1. Pull TSD to a logic low to end the ringing state.
This opens the ringing return switch (SW3) and
prevents any other switches from closing.
2. Keep TSD low for at least one-half the duration of
the ringing cycle period to allow sufficient time for
a zero crossing current event to occur and for the
circuit to enter the break before make state.
3. During the TSD low period, set the INRINGING and
INTEST inputs to the talk state (0, 0).
4. Release TSD, allowing the internal pull-up to
activate the break switches.
When using TSD as an input, the two recommended
states are 0 (overrides logic input pins and forces an
all off state) and float (allows switch control via logic
input pins and the thermal shutdown mechanism is
active). This requires the use of an open-collector type
buffer.
Forcing TSD to a logic high disables the thermal
shutdown circuit and is therefore not recommended as
this could lead to device damage or destruction in the
presence of excessive tip or ring potentials.
2.2.6 Break-Before-Make Operation for all Version (Ringing to Talk Transition)
State
INRINGING
INTEST
Ringing
1
0
All-Off
0
0
LATCH
0
BreakBeforeMake
0
0
Talk
0
0
TSD
Timing
Floating
-
Off
On
On
Off
Hold this state for at least one-half of the
ringing cycle. SW4 waiting for zero
current to turn off.
Off
Off
On
Off
SW4 has opened
Off
Off
Off
Off
Close Break Switches
On
Off
Off
Off
0
Floating
2.3 Data Latch
The CPC7582 has an integrated data latch. The latch
operation is controlled by logic-level input pin 11
(LATCH). The data input of the latch is pin 10
(INRINGING) and pin 9 (INTEST) of the device while the
output of the data latch is an internal node used for
state control. When LATCH control pin is at logic 0, the
data latch is transparent and data control signals flow
directly through to state control. A change in input will
be reflected in the switch state. When LATCH control
pin is at logic 1, the data latch is active and a change
in input control will not affect switch state. The
switches will remain in the position they were in when
the LATCH changed from logic 0 to logic 1 and will not
respond to changes in input as long as the latch is at
logic 1. The TSD input is not tied to the data latch.
Therefore, TSD is not affected by the LATCH input and
the TSD input will override state control.
14
Ringing
Ringing
Return
Break
Test
Switch
Switches Switch
Switches
(SW4)
(SW3)
2.4 Thermal Shutdown
Setting TSD to +5 V allows switch control using the
logic inputs. This setting, however, also disables the
thermal shutdown circuit and is therefore not
recommended. When using logic controls via the input
pins, pin 7 (TSD) should be allowed to float. As a
result, the two recommended states when using pin 7
(TSD) as a control are 0, which forces the device to the
all-off state, or float, which allows logic inputs to
remain active. This requires the use of an
open-collector type buffer.
2.5 Ringing Switch Zero-Cross Current Turn Off
After the application of a logic input to turn SW4 off,
the ringing switch is designed to delay the change in
state until the next zero-crossing. Once on, the switch
requires a zero-current cross to turn off, and therefore
should not be used to switch a pure DC signal. The
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CPC7582
switch will remain in the on state no matter the logic
input until the next zero crossing. These switching
characteristics will reduce and possibly eliminate
overall system impulse noise normally associated with
ringing switches. See application note AN-144, Impulse
Noise Benefits of Line Card Access Switches. The
attributes of ringing switch SW4 may make it possible
to eliminate the need for a zero-cross switching
scheme. A minimum impedance of 300 Ω in series
with the ringing generator is recommended.
2.6 Power Supplies
Both a +5 V supply and battery voltage are connected
to the CPC7582. CPC7582 switch state control is
powered exclusively by the +5 V supply. As a result,
the CPC7582BC exhibits extremely low power
dissipation during both active and idle states.
The battery voltage is not used for switch control but
rather as a supply for the integrated secondary
protection circuitry. The integrated SCR is designed to
trigger when pin 2 (TBAT) or pin 15 (RBAT) drops 2 to
4 V below the voltage on pin 16 (VBAT). This trigger
prevents a fault induced overvoltage event at the TBAT
or RBAT nodes.
2.7 Battery Voltage Monitor
The CPC7582 also uses the VBAT voltage to monitor
battery voltage. If battery voltage is lost, the CPC7582
immediately enters the all-off state. It remains in this
state until the battery voltage is restored. The device
also enters the all-off state if the system battery
voltage goes more positive than –10 V, and remains in
the all-off state until the battery voltage goes more
negative than –15 V. This battery monitor feature
draws a small current from the battery (less than 1 μA
typical) and will add slightly to the device’s overall
power dissipation.
2.8 Protection
2.8.1 Diode Bridge/SCR
The CPC7582 uses a combination of current limited
break switches, a diode bridge/SCR clamping circuit,
and a thermal shutdown mechanism to protect the
SLIC device or other associated circuitry from damage
during line transient events such as lightning. During a
positive transient condition, the fault current is
conducted through the diode bridge to ground via
FGND. Voltage is clamped to a diode drop above
ground. During a negative transient of 2 to 4 V more
negative than the voltage at VBAT, the SCR conducts
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and faults are shunted to FGND via the SCR or the
diode bridge.
In order for the SCR to crowbar or foldback, the on
voltage (see “Protection Circuitry Electrical
Specifications” on page 10) of the SCR must be less
negative than the VBAT voltage. If the VBAT voltage is
less negative than the SCR on voltage or if the VBAT
supply is unable to source the trigger current, the SCR
will not crowbar.
For power induction or power-cross fault conditions,
the positive cycle of the transient is clamped to the
diode drop above ground and the fault current directed
to ground. The negative cycle of the transient will
cause the SCR to conduct when the voltage exceeds
the VBAT voltage by two to four volts, steering the
current to ground.
2.8.2 Current Limiting function
If a lightning strike transient occurs when the device is
in the talk state, the current is passed along the line to
the integrated protection circuitry and limited by the
dynamic current limit response of the active switches
during the talk state. During the talk state, when a
1000V 10x1000 μs pulse (GR-1089-CORE lightning)
is applied to the line though a properly clamped
external protector, the current seen at pins 2 (TBAT)
and pin 15 (RBAT) will be a pulse with a typical
magnitude of 2.5 A and a duration of less than 0.5 μs.
If a power-cross fault occurs with the device in the talk
state, the current is passed though break switches
SW1 and SW2 on to the integrated protection circuit
and is limited by the dynamic DC current limit
response of the two break switches. The DC current
limit, specified over temperature, is between 80 mA
and 425 mA, and the circuitry has a negative
temperature coefficient. As a result, if the device is
subjected to extended heating due to a power cross
fault, the limited current measured at pin 3 (TLINE) and
pin 14 (RLINE) will decrease as the device temperature
increases. If the device temperature rises sufficiently,
the temperature shutdown mechanism will activate
and the device will enter the all-off state.
2.9 Temperature Shutdown
The thermal shutdown mechanism will activate when
the device temperature reaches a minimum of 110° C,
placing the device in the all-off state regardless of
logic input. During thermal shutdown mode, pin 7
(TSD) will read 0 V. Normal output of TSD is +VDD.
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CPC7582
If presented with a short duration transient such as a
lightning event, the thermal shutdown feature will
typically not activate. But in an extended power-cross
transient, the device temperature will rise and the
thermal shutdown will activate forcing the switches to
the all-off state. At this point the current measured at
pin 3 (TLINE) and pin 14 (RLINE) through the break
switches will drop to zero. Once the device enters
thermal shutdown it will remain in the all-off state until
the temperature of the device drops below the deactivation level of the thermal shutdown circuit. This
will permit the device to return to normal operation. If
the transient has not passed, current will flow at the
value allowed by the dynamic DC current limiting of
the switches and heating will begin again, reactivating
the thermal shutdown mechanism. This cycle of
entering and exiting the thermal shutdown mode will
continue as long as the fault condition persists. If the
magnitude of the fault condition is great enough, the
external secondary protector could activate and shunt
all current to ground.
The thermal shutdown mechanism of the CPC7582
can be disabled by applying a logic high to pin 7 (TSD).
2.10 External Protection Elements
The CPC7582 requires only overvoltage secondary
protection on the loop side of the device. The
integrated protection feature described above negates
the need for protection on the line side. The secondary
protector limits voltage transients to levels that do not
exceed the breakdown voltage or input-output
isolation barrier of the CPC7582. A foldback or
crowbar type protector is recommended to minimize
stresses on the device.
Consult Clare’s application note, AN-100, “Designing
Surge and Power Fault Protection Circuits for Solid
State Subscriber Line Interfaces” for equations related
to the specifications of external secondary protectors,
fused resistors and PTCs.
16
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CPC7582
3. Manufacturing Information
3.1 Mechanical Dimensions
3.1.1 16-Pin SOIC
NOTES:
1. Coplanarity = 0.1016 (0.004) max.
2. Leadframe thickness does not include solder plating (1000 microinch maximum).
10.211 ± 0.254
(0.402 ± 0.010)
PIN 16
10.312 ± 0.381
(0.406 ± 0.015)
7.493 ± 0.127
(0.295 ± 0.005)
DIMENSIONS
mm
(inches)
PIN 1
1.270 TYP
(0.050 TYP)
0.406 ± 0.076
(0.016 ± 0.003)
2.540 ± 0.152
(0.100 ± 0.006)
2.337 ± 0.051
(0.092 ± 0.002)
0.649 ± 0.102
(0.026 ± 0.004)
0.203 ± 0.102
(0.008 ± 0.004)
0.254 MIN / 0.737 MAX X 45°
(0.010 MIN / 0.029 MAX X 45°)
0.889 ± 0.178
(0.035 ± 0.007)
0.2311 MIN / 0.3175 MAX
(0.0091 MIN / 0.0125 MAX)
3.1.2 16-Pin DFN
7.00 ± 0.25
(0.276 ± 0.01)
6.00 ± 0.25
(0.236 ± 0.01)
INDEX AREA
TOP VIEW
0.90 ± 0.10
(0.035 ± 0.004)
0.02, + 0.03, - 0.02
(0.0008, + 0.0012, - 0.0008)
1
SIDE VIEW
0.30 ± 0.05
(0.012 ± 0.002)
SEATING
PLANE
0.20
(0.008)
EXPOSED
METALLIC PAD
4.25 ± 0.05
(0.167 ± 0.002)
Terminal Tip
0.80
(0.032)
16
6.00 ± 0.05
(0.236 ± 0.002)
0.55 ± 0.10
(0.022 ± 0.004)
BOTTOM VIEW
Dimensions
mm
(inch)
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17
CPC7582
3.2 Printed-Circuit Board Land Patterns
3.2.1 16-Pin SOIC
3.2.2 16-Pin DFN
1.27
(0.050)
0.35
(0.014)
1.05
(0.041)
9.40
(0.370)
5.80
(0.228)
2.00
(0.079)
0.60
(0.024)
0.80
(0.031)
DIMENSIONS
mm
(inches)
DIMENSIONS
mm
(inches)
NOTE: Because the metallic pad on the bottom of the
DFN package is connected to the substrate of the die,
Clare recommends that no printed circuit board traces
or vias be placed under this area to maintain minimum
creepage and clearance values.
3.3 Tape and Reel Packaging
3.3.1 16-Pin SOIC
Tape and Reel Packaging for 16-Pin SOIC Package
330.2 Dia
(13.00 Dia)
B0=10.70 + 0.15
(0.421 + 0.01)
Pin 1
Top Cover
Tape Thickness
0.102 Max
(0.004 Max)
W=16.00 + 0.30
(0.630 + 0.010)
Top Cover
Tape
K0=3.20 + 0.15
(0.193 + 0.01)
K1=2.70 + 0.15
(0.106 + 0.01)
Embossed
Carrier
Embossment
18
P=12.00
(0.47)
User Direction of Feed
A0=10.90 + 0.15
(0.429 + 0.010)
Dimensions
mm
(inches)
NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2
www.clare.com
R05
CPC7582
3.3.2 16-Pin DFN
B0=7.24 + 0.10
(0.285 + 0.004)
330.2 Dia
(13.00 Dia)
Pin 1
Top Cover
Tape Thickness
0.102 Max
(0.004 Max)
W=16.00 + 0.30
(0.630 + 0.012)
P=12.00 + 0.10
(0.472 + 0.004)
K0=1.61 + 0.10
(0.063 + 0.004)
Embossed
Carrier
A0=6.24 + 0.10
(0.246 + 0.004)
Dimensions
mm
(inches)
User Direction of Feed
Embossment
NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2
3.4 Soldering
3.4.1 Moisture Reflow Sensitivity
3.4.2 Reflow Profile
Clare has characterized the moisture reflow sensitivity
for this product using IPC/JEDEC standard
J-STD-020. Moisture uptake from atmospheric
humidity occurs by diffusion. During the solder reflow
process, in which the component is attached to the
PCB, the whole body of the component is exposed to
high process temperatures. The combination of
moisture uptake and high reflow soldering
temperatures may lead to moisture induced
delamination and cracking of the component. To
prevent this, this component must be handled in
accordance with IPC/JEDEC standard J-STD-033 per
the labeled moisture sensitivity level (MSL), level 1 for
the SOIC package, and level 3 for the DFN package.
For proper assembly, this component must be
processed in accordance with the current revision of
IPC/JEDEC standard J-STD-020. Failure to follow the
recommended guidelines may cause permanent
damage to the device resulting in impaired
performance and/or a reduced lifetime expectancy.
3.5 Washing
Clare does not recommend ultrasonic cleaning of this
part.
Pb
RoHS
2002/95/EC
e3
For additional information please visit www.clare.com
Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses or indemnity are expressed or implied. Except as set
forth in Clare’s Standard Terms and Conditions of Sale, Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty relating to its
products, including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized, or warranted for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a
person or severe property or environmental damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice.
Specifications: DS-CPC7582-R05
© Copyright 2009, Clare, Inc.
All rights reserved. Printed in USA.
10/14/09
R05
www.clare.com
19