PROCESS CPD91V Central Switching Diode Semiconductor Corp. Low Leakage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 15,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 94,130 PRINCIPAL DEVICE TYPES CMPD6001 Series CMOD6001 CMLD6001 CMLD6001DO CMDD6001 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com TM R0 (10- April 2006) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD91V Typical Electrical Characteristics R0 (10- April 2006)