CPH3351 Ordering number : ENA1880A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET CPH3351 General-Purpose Switching Device Applications Features • • • • ON-resistance RDS(on)1=190mΩ(typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --60 V ±20 V Allowable Power Dissipation ID IDP PD 1 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) --1.8 A --7.2 A Package Dimensions Product & Package Information unit : mm (typ) 7015A-004 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel CPH3351-TL-H 0.6 2.9 0.15 Packing Type: TL 0.05 LOT No. 0.2 WH 3 1.6 2.8 Marking 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 SANYO : CPH3 1 2 http://semicon.sanyo.com/en/network 60612 TKIM/D0810PE TKIM TC-00002526 No. A1880-1/7 CPH3351 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--60V, VGS=0V Ratings min typ Unit max --60 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--1A 2.7 RDS(on)1 ID=--1A, VGS=--10V 190 250 mΩ RDS(on)2 ID=--0.5A, VGS=--4.5V 235 330 mΩ RDS(on)3 ID=--0.5A, VGS=--4V 250 350 mΩ Input Capacitance Ciss VDS=--20V, f=1MHz 262 pF Output Capacitance Coss VDS=--20V, f=1MHz 29 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 19 pF Turn-ON Delay Time td(on) See specified Test Circuit. 5.1 ns Rise Time tr See specified Test Circuit. 5.4 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 34 ns Fall Time tf See specified Test Circuit. 19 ns 6.0 nC Static Drain-to-Source On-State Resistance --1.2 --1 μA ±10 μA --2.6 V S Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=--30V, VGS=--10V, ID=--1.8A VDS=--30V, VGS=--10V, ID=--1.8A 0.83 nC Gate-to-Drain “Miller” Charge Qgd VDS=--30V, VGS=--10V, ID=--1.8A 1.3 nC Diode Forward Voltage VSD IS=--1.8A, VGS=0V --0.82 --1.2 V Switching Time Test Circuit 0V --10V VIN VDD= --30V ID= --1A RL=30Ω VIN D PW=10μs D.C.≤1% VOUT G CPH3351 P.G 50Ω S Ordering Information Device CPH3351-TL-H Package Shipping memo CPH3 3,000pcs./reel Pb Free and Halogen Free No. A1880-2/7 CPH3351 ID -- VDS --2.0 --0.8 --0.6 --0.4 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0A 400 300 200 100 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V --2.5 400 5A -0. =, ID 5A .0V --0. = --4 = ID A 5V, 1.0 V GS --4. = -= I D , .0V V GS --10 = V GS 350 300 250 200 150 100 50 --40 --20 0 20 40 60 80 100 120 140 160 IT16095 IS -- VSD --10 7 5 5 --3.0 IT16093 Ambient Temperature, Ta -- °C VDS= --10V 7 --2.0 450 0 --60 --20 VGS=0V 3 3 2 C 5° --2 = Ta °C 75 1.0 7 25 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S --18 --1.5 RDS(on) -- Ta IT16094 | yfs | -- ID 10 --1.0 500 ID= --0.5A 500 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 600 0 IT16092 RDS(on) -- VGS 700 --0.9 °C 5 3 2 --1.0 7 5 3 Ta=7 5°C 25°C --25° C 0 --25 VGS= --2.0V Drain-to-Source Voltage, VDS -- V 2 --0.1 7 5 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A SW Time -- ID 100 5 5 7 --10 IT16096 10 7 td(on) 5 tr 3 2 --0.2 --0.4 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT16098 --0.8 --1.0 --1.2 IT16097 f=1MHz 7 5 3 Ciss 2 100 7 5 3 Coss 2 2 --0.6 Ciss, Coss, Crss -- VDS 1000 Ciss, Coss, Crss -- pF tf 2 0 Diode Forward Voltage, VSD -- V td(off) 3 1.0 --0.01 --0.01 VDD= --30V VGS= --10V 7 Switching Time, SW Time -- ns Ta= 7 --0.5 --0.2 0 --1.0 25° C --1.0 --1.5 5°C --1.2 °C Drain Current, ID -- A 0V --1.4 .0V --3 --10 . Drain Current, ID -- A --1.6 --4 .5 V --8. 0V --1.8 ID -- VGS --2.5 VDS= --10V --4. 0V --6. 0V --2.0 10 Crss 0 --10 --20 --30 --40 --50 Drain-to-Source Voltage, VDS -- V --60 IT16099 No. A1880-3/7 CPH3351 VGS -- Qg --10 --9 3 --8 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 7 5 VDS= --30V ID= --1.8A --7 --6 --5 --4 --3 --2 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC 6 IT16100 PD -- Ta 1.2 Allowable Power Dissipation, PD -- W 3 2 10 IDP= --7.2A (PW≤10μs) 1m ID= --1.8A 10 --1.0 7 5 DC 0μ s s ms 10 0m op s era Operation in this area is limited by RDS(on). --0.1 7 5 3 2 --1 ASO tio n( Ta =2 5° C) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT16101 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16102 No. A1880-4/7 CPH3351 Embossed Taping Specification CPH3351-TL-H No. A1880-5/7 CPH3351 Outline Drawing CPH3351-TL-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1880-6/7 CPH3351 Note on usage : Since the CPH3351 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1880-7/7