Sanyo CPH6301 Ultrahigh-speed switching application Datasheet

Ordering number:EN5938
P-Channel MOS Silicon FET
CPH6301
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
unit:mm
2151
[CPH6301]
5
4
0.6
6
0.2
0.15
2.9
2.8
0.6
1.6
0 to 0.1
2
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
3
0.95
0.7
0.9
0.2
1
0.4
Specifications
SANYO : CPH6
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
–20
V
±10
V
–3
A
ID
Drain Current (pulse)
IDP
PW≤10µs, duty cycle≤1%
–12
A
Allowable Power Dissipation
Mounted on a ceramic board (900mm2×0.8mm)
1.6
W
Channel Temperature
PD
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
V(BR)DSS
IDSS
ID=–1mA, VGS=0
VGS=±8V, VDS=0
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=–1.5A, VGS=–4V
RDS(on)2
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Ratings
min
typ
–20
Unit
V
VDS=–20V, VGS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–1.5A
max
–10
µA
±10
µA
–1.4
V
110
145
mΩ
220
mΩ
–0.4
3.3
4.8
S
ID=–0.5A, VGS=–2.5V
160
Input Capacitance
Ciss
VDS=–10V, f=1MHz
360
pF
Output Capacitance
Coss
180
pF
Reverse Transfer Capacitance
Crss
VDS=–10V, f=1MHz
VDS=–10V, f=1MHz
90
pF
Continued on next page.
Marking : JA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40999TS (KOTO) TA-1603 No.5938-1/4
CPH6301
Continued from preceding page.
Parameter
Symbol
Turn-ON Delay Time
min
typ
max
Unit
td(on)
See specified Test Circuit
10
ns
tr
See specified Test Circuit
42
ns
td(off)
See specified Test Circuit
56
ns
tf
See specified Test Circuit
56
ns
Qg
VDS=–10V, VGS=–10V, ID=–3A
18
nC
VDS=–10V, VGS=–10V, ID=–3A
VDS=–10V, VGS=–10V, ID=–3A
IS=–3A, VGS=0
1
nC
3
Rise Time
Turn-OFF Delay Time
Ratings
Conditions
Fall Time
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain "Miller" Charge
Qgd
Diode Forward Voltage
VSD
nC
–0.85
–1.5
V
Switching Time Test Circuit
0V
–4V
VDD=–10V
VIN
ID=–1.5A
RL=6.6Ω
VIN
PW=10µs
D.C.≤1%
D
VOUT
G
CPH6301
P.G
50Ω
S
–8.0V
V
.5
-2.0
-1.5
-1.0
VGS=–1.5V
-3
-2
-1
-0.5
0
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
0
-1.0
0
-0.5
Drain-to-Source Voltage, VDS – V
7
| yf s | - I D
3
C
25°
5°C
2
=–
Ta
°C
75
2
1.0
7
5
3
2
0.1
-0.01
2
3
5 7 -0.1
2
3
5 7 -1.0
Drain Current, ID – A
2
-1.5
-2.0
-2.5
R DS(on) - VGS
300
VDS=–10V
5
-1.0
Gate-to-Source Voltage, VGS – V
3
5 7 -10
Ta=25°C
ID=–1.5A
Static Drain-to-Source
On-State Resistance, RDS(on) – mΩ
Forward Transfer Admittance, | yfs | – S
10
C
-4
Ta=
-2.5
–25
°C
-5
–2.0V
Drain Current, ID – A
–2
–10
Drain Current, ID – A
V
-3.0
ID - VGS
VDS=–10V
75°
–6
–4 .0V
.0
–3 V
.0V
-6
25°C
ID - VDS
-3.5
250
ID=–0.5A
200
150
100
50
0
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
Gate-to-Source Voltage, VGS – V
No.5938-2/4
CPH6301
150
=–4V
,V GS
A
=–1.5
ID
100
50
0
-60
-40
-20
0
20
40
60
80
100
120
140
-1.0
7
5
3
2
-0.1
7
5
3
2
-0.01
7
5
3
2
-0.001
0
-0.1
-0.2
Ciss,Coss,Crss - VDS
-9
1000
7
5
Ciss
3
2
Coss
100
7
5
Crss
3
2
Gate-to-Source Voltage, VGS – V
Ciss,Coss,Crss – pF
-10
f=1MHz
3
2
0
-0.6
-0.7
-0.8
-0.9
-1.0
16
18
VGS - Q g
VDS=–10V
ID=–3A
-8
-7
-6
-5
-4
-3
-2
-2
-4
-6
-8
-10
-12
-14
-16
-18
0
0
-20
2
4
Drain-to-Source Voltage, VDS – V
3
2
VDD=–10V
VGS=–4V
Drain Current, ID – A
2
td(off)
tf
3
8
10
12
14
tr
2
td(on)
10
7
5
3
A S O
100µs
1m
s
10
ms
IDP=–12A
-10
7
5
3
100
7
5
6
Total Gate Charge, Qg – nC
SW Time - I D
1000
7
5
Switching Time, SW Time – ns
-0.5
-1
10
ID=–3A
3
2
DC
-1.0
7
5
10
0m
s
op
era
3
2
tio
n
Operation in this area
is limited by RDS(on).
-0.1
7
5
Ta=25°C
1 Pulse
2
-0.01 Mounted on a ceramic board (900mm ×0.8mm)
3
2
2
1.0
5
7
-0.1
2
3
5
7 -1.0
2
3
5
7 -10
Drain Current, ID – A
-0.01
2
3
5 7 -0.1
2
3
5 7 -1.0
2
3
5 7 -10
2
3
Drain-to-Source Voltage, VDS – V
P D - Ta
1.8
Allowable Power Dissipation, PD – W
-0.4
Diode Forward Voltage, VSD – V
Ambient Temperature, Ta – ˚C
10000
7
5
-0.3
C
5A,V
0.
I D=–
=–2.
GS
–25°
5V
200
I F - VSD
VGS=0
25°C
250
Forward Current, IF – A
Static Drain-to-Source
On-State Resistance, RDS (on) – mΩ
-10
7
5
3
2
Ta=
75°
C
R DS(on) - Ta
300
1.6
M
1.4
ou
1.2
nt
ed
on
ac
1.0
er
am
ic
bo
0.8
0.6
ar
d
(9
00
m
0.4
m2
×0
.8
m
m
)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
No.5938-3/4
CPH6301
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 1999. Specifications and information herein are subject to
change without notice.
PS No.5938-4/4