Ordering number:ENN6348 P-Channel Silicon MOSFET CPH6306 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2151A [CPH6306] 5 4 0.6 6 0.2 0.15 2.9 2.8 0.6 1.6 0.05 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 0.2 2 0.7 0.9 1 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Conditions Ratings Unit VDSS VGSS –60 V ±20 V ID –1.8 A Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation Mounted on a ceramic board (900mm2×0.8mm) Channel Temperature PD Tch Storage Temperature Tstg –7.2 A 1.6 150 W ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance V(BR)DSS IDSS Conditions ID=–1mA, VGS=0 Ratings min typ –60 VGS=±16V, VDS=0 RDS(on)1 ID=–1A, VGS=–10V RDS(on)2 Ciss Unit V VDS=–60V, VGS=0 IGSS VGS(off) | yfs | max –10 µA ±10 µA –2.4 V 300 400 mΩ ID=–0.8A, VGS=–4V 400 560 mΩ 270 pF 70 pF 20 pF VDS=–10V, ID=–1mA VDS=–10V, ID=–1A Output Capacitance Coss VDS=–20V, f=1MHz VDS=–20V, f=1MHz Reverse Transfer Capacitance Crss VDS=–20V, f=1MHz –1.0 1.6 Marking : JG 2.3 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2310 No.6348-1/4 CPH6306 Continued from preceding page. Parameter Symbol Turn-ON Delay Time min typ Unit max td(on) See specified Test Circuit 9 ns tr See specified Test Circuit 7 ns td(off) See specified Test Circuit 38 ns tf See specified Test Circuit 16 ns Qg VDS=–10V, VGS=–10V, ID=–1.8A 9.8 nC 1.4 nC 1.7 nC Rise Time Turn-OFF Delay Time Ratings Conditions Fall Time Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=–10V, VGS=–10V, ID=–1.8A VDS=–10V, VGS=–10V, ID=–1.8A Diode Forward Voltage VSD IS=–1.8A, VGS=0 –0.82 –1.2 V Switching Time Test Circuit VDD=--30V 0V --10V VIN PW=10µs D.C.≤1% ID=--1A RL=30Ω VIN VOUT D G P.G 50Ω CPH6306 ID -- VDS --2.0 ID -- VGS --4.0 --1.8 --3.0V --1.0 --0.8 --0.6 --0.4 Ta= -- --2.0 --1.5 --1.0 --0.5 0 --0.2 0 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS – V --1.8 --2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 800 700 --1.0A 500 ID=--0.8A 300 200 100 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS – V --18 --20 IT01225 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT01224 RDS(on) -- Ta 1000 900 0 --1.0 Gate-to-Source Voltage, VGS – V Ta=25°C 600 --0.5 IT01223 RDS(on) -- VGS 1000 Static Drain-to-Source On-State Resistance, RDS (on) – mΩ --2.5 VGS=--2.5V --0.2 400 --3.0 C .0V --10 --1.2 .5V --3 75° --5 . --4 0V .0V Drain Current, ID – A --6.0V --1.4 Drain Current, ID – A --3.5 --8.0V --1.6 0 25°C VDS=--10V 25°C S 900 800 700 V 600 500 --4 S= G V , .8A --0 I D= 400 0V =--1 VGS 0A, . --1 I D= 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta – ˚C 120 140 160 IT01226 No.6348-2/4 CPH6306 °C 75 0.1 7 5 5 7--0.1 2 3 5 7--1.0 2 3 --0.1 7 5 5 7 --10 0 tf td(on) 10 7 5 tr 3 --0.4 --0.7 --0.8 --0.9 --1.0 IT01228 f=1MHz Ciss 3 2 100 Coss 7 5 3 Crss 2 10 1.0 --0.1 2 3 5 7 2 --1.0 3 5 7 Drain Current, ID – A 0 --10 --7 3 2 Drain Current, ID – A --6 --5 --4 --3 --60 IT01230 --1 3 2 0 6 7 8 9 Total Gate Charge, Qg – nC 10 IT01231 10µs 10 0 1m µs s ID=--1.8A 10 Operation in this area is limited by RDS(on). 3 2 --2 5 --50 IDP=--7.2A --1.0 7 5 --0.1 7 5 4 --40 ASO --8 3 --30 2 --10 7 5 2 --20 Drain-to-Source Voltage, VDS – V VDS=--10V ID=--1.8A 1 --10 IT01229 VGS -- Qg --10 0 --0.6 5 2 --9 --0.5 7 Ciss, Coss, Crss – pF 3 --0.3 Ciss, Coss, Crss -- VDS 1000 td(off) 2 --0.2 Diode Forward Voltage, VSD – V VDD=--30V VGS=--10V 7 5 --0.1 IT01227 SW Time -- ID 100 Switching Time, SW Time – ns 3 2 --0.01 5 7--0.01 2 3 Drain Current, ID – A Gate-to-Source Voltage, VGS – V --1.0 7 5 3 2 3 2 0.01 --0.001 2 3 DC 10 0m s ms op era tio n Ta=25°C Single pulse Mounted on a ceramic board (900mm2×0.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS – V 3 5 7 --100 IT01232 PD -- Ta 2.0 Allowable Power Dissipation, PD – W 3 2 --25°C -- = Ta 3 2 °C 25 °C 25 VGS = 0 Ta=7 5°C 1.0 7 5 Forward Current, IF – A Forward Transfer Admittance, | yfs | – S 3 2 IF -- VSD --10 7 5 VDS=--10V 7 5 25°C yfs -- ID 10 1.6 1.5 M ou nt ed on ac er 1.0 am ic bo ar d( 90 0m m2 ×0 0.5 .8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 IT01233 No.6348-3/4 CPH6306 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6348-4/4