Central CQ202-4DS-2 4.0 amp triac 200 thru 800 volt Datasheet

CQ202-4BS-2
CQ202-4DS-2
CQ202-4MS-2
CQ202-4NS-2
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ202-4BS-2
series type is an epoxy molded silicon triac designed
for full wave AC control applications featuring gate
triggering in all four (4) quadrants.
4.0 AMP TRIAC
200 THRU 800 VOLTS
MARKING: FULL PART NUMBER
TO-202-2 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Peak Repetitive Off-State Voltage
SYMBOL
VDRM
IT(RMS)
CQ202
-4BS-2
200
CQ202
-4DS-2
400
CQ202
-4MS-2
600
CQ202
-4NS-2
800
UNITS
V
RMS On-State Current (TC=80°C)
Peak Non-Repetitive Surge Current (t=8.3ms) ITSM
Peak Non-Repetitive Surge Current (t=10ms) ITSM
4.0
A
40
A
35
A
I2t Value for Fusing (t=10ms)
I2t
6.0
A2s
Peak Gate Power (tp=10μs)
PGM
PG(AV)
3.0
W
0.2
W
Average Gate Power Dissipation
Peak Gate Current (tp=10μs)
1.2
A
-40 to +150
°C
-40 to +125
°C
Thermal Resistance
TJ
ΘJA
60
°C/W
Thermal Resistance
ΘJC
7.5
°C/W
Storage Temperature
Junction Temperature
ELECTRICAL
SYMBOL
IDRM
IDRM
IGT
IGT
IH
VGT
IGM
Tstg
CHARACTERISTICS: (TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
Rated VDRM, RGK=1.0KΩ
TYP
MAX
10
UNITS
μA
Rated VDRM, RGK=1.0KΩ, TC=125°C
VD=12V, QUAD I, II, III
200
μA
2.5
5.0
mA
VD=12V, QUAD IV
5.4
9.0
mA
mA
RGK=1.0KΩ
1.6
5.0
0.95
1.75
V
VTM
VD=12V, QUAD I, II, III
ITM=6.0A, tp=380μs
1.25
1.75
V
dv/dt
VD=⅔ VDRM, TC=125°C
11
V/μs
R2 (23-April 2012)
CQ202-4BS-2
CQ202-4DS-2
CQ202-4MS-2
CQ202-4NS-2
4.0 AMP TRIAC
200 THRU 800 VOLTS
TO-202-2 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
3) Gate
Tab is common to pin 2
MARKING:
FULL PART NUMBER
R2 (23-April 2012)
w w w. c e n t r a l s e m i . c o m
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