Central CQDD-12M CQDD-12N TM Semiconductor Corp. 12 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-12M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQDD -12M CQDD -12N UNITS 800 V Peak Repetitive Off-State Voltage VDRM RMS On-State Current (TC=90°C) IT(RMS) 12 A Peak One Cycle Surge (t=8.3ms) ITSM 80 A I2t Value for Fusing (t=8.3ms) I2t 27 A2s Peak Gate Power (tp=10µs) 40 W 1.0 W Peak Gate Current (tp=10µs) PGM PG (AV) IGM 4.0 A Peak Gate Voltage (tp=10µs) VGM 16 V Average Gate Power Dissipation 600 Critical Rate of Rise of On-State Current Repetitive (f=60Hz) di/dt 10 A/µs Storage Temperature Tstg -40 to +150 °C Junction Temperature TJ -40 to +125 °C Thermal Resistance ΘJA 60 °C/W Thermal Resistance ΘJC 2.7 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT TYP MAX UNITS Rated VDRM 10 µA Rated VDRM, TC=125°C VD=12V, RL=10Ω, QUAD I, II, III 500 µA 20 mA 9.9 VD=12V, RL=10Ω, QUAD IV 24.3 50 mA IH VGT IT=100mA VD=12V, RL=10Ω, QUAD I, II, III 14.1 25 mA 1.10 1.50 V VGT VD=12V, RL=10Ω, QUAD IV ITM=17A, tp=380µs 2.10 2.50 V 1.33 1.50 VTM dv/dt VD=2 /3 VDRM, RGK=∞, TC=125°C 10 V V/µs R1 (24-September 2004) Central TM CQDD-12M CQDD-12N Semiconductor Corp. 12 AMP TRIAC 600 THRU 800 VOLTS D2PAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) GATE 4) MT2 MARKING CODE: FULL PART NUMBER DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.163 0.189 4.14 4.80 B 0.045 0.055 1.14 1.40 C 0.000 0.010 0.00 0.25 D 0.012 0.028 0.30 0.70 E 0.386 0.409 9.80 10.40 F 0.378 0.417 9.60 10.60 G 0.335 0.358 8.50 9.10 H 0.197 0.236 5.00 6.00 J 0.093 0.108 2.35 2.75 K 0.030 0.035 0.75 0.90 D2PAK (REV: R2) R1 (24-September 2004)