ETC1 CR1100SB Thyristors (sibod breakover devices) Datasheet

SiBOD™ Series
Thyristors (SiBOD™ Breakover Devices)
SiBOD™
Series
Specify Crydom
… for these industry-leading
components and products:
• Solid State Relays
Get TVS Insurance From
The People Who Know
Crydom’s SiBOD Series Equals
“Crow Bar” Protection
There’s too much riding on over-voltage
surge protection to take chances. That’s
why more and more people are turning
to Crydom.
To protect sensitive telecommunications
circuitry, Crydom Thyristors (SiBOD™
Breakover Devices) “crow bar” potentially dangerous transients – switching them
to ground and dissipating the voltage to
zero. This approach can handle more
energy than TVS diode “clamping.”
Printed Circuit Board Mount
Panel Mount
DIN Rail Mount
• Power Cubes
• I/O Modules
• Transient Voltage
Suppression Components
TVS Diodes
Thyristor Suppression
Devices
Gas Discharge Tubes (GDT)
Zeners/Studs
Hybrid Arrester Devices
Why?
To start with, we don’t just sell TVS components – we’re the only company developing, designing and manufacturing all five
of the basic product families: Transient
Voltage Suppression (TVS) Diodes. SiBOD™
Thyristor Suppression Devices. Gas Discharge
Tubes (GDT). Hybrid Arrester Over-Voltage
Surge Protectors. Zeners/Studs. And the
only company employing all three voltage
protection technologies – gas tube, semiconductor and hybrid.
That means we're the only one who knows
them inside and out. What each type can
and can't do. Which type to use for different applications. How to provide as much
or little technical support as you need.
How to work with you to develop special
devices should you require them. And
even assist you in formulating design
requirements and testing procedures to
meet both your specifications and international standards.
FEATURES
• Glass passivated junction
• Bi-directional transient voltage
protection
• Nano second clamping response
• Surge capability up to 500 amps
• No performance degradation under
service life
BENEFITS
• One component cost for +ve
and -ve protection
• Excellent voltage protection levels
• Can be used for primary or secondary
protection
• No replacement required ie,
no maintenance cost
• Highest level of quality and reliability
• Low cost auto assembly
MECHANICAL CHARACTERISTICS
• Transfer molded, void free epoxy body
• Tin/Lead plated leads
• Maximum case temperature for soldering purposes: 230°C for 10 seconds
To Order: 1-877-502-5500 Fax: 1-858-715-7280
Thyristors (SiBOD™ Breakover Devices)
SiBOD Series
Application Notes
The Added Crydom Benefit
Crydom Thyristors (SiBOD™ Breakover
Devices) offer the highest quality and
performance. They also come with an
added benefit – service and technical
assistance to help ensure optimum protection for your telecommunications
application.
PABX PROTECTION
CR1300SB
CR1300SB
DC SUPPLY
VC
R
IH >
R
Equipment
to be
protected
VC
SiBOD Series
The Crydom SiBOD is a four-layer thyristorbased protector designed specifically for
telecommunications applications. It has
greater capacity for diverting surge currents than an avalanche TVS device.
The Crydom series protector is based on
the proven technology of the SiBOD product. Designed for transient voltage protection of telecommunications equipment, it
provides higher power handling than a
conventional avalanche diode (TVS), and
when compared to a GDT offers lower voltage clamping levels and infinite surge life.
SLIC PROTECTION
Line
CR0640SB
To SLIC
CR0640SB
Line
or
Line
(-)
(-)
(+) To SLIC
CR0640SB
(-)
Line
COMPLETE PC BOARD
OPERATION PROTECTION
Line
CR2300
SB
Integrated
SLIC
On-hook
Off-hook
Ring
relay
CR0640 (-)
SB
(-)
On-hook
Line
Primary Off-hook
protection Ring
Generator
on-hook
or
Ring
Detection
(+)
(-)
Secondary
protection
off-hook
Electrical Characteristics
The electrical characteristics of the
SiBOD devices are similar to those of a
self-gated Triac, but the SiBOD are twoterminal devices with no gate. The gate
function is achieved by an internal current
controlled mechanism.
Like the TVS diodes, the SiBOD have a
stand-off voltage (VRM) that should be equal
to or greater than the operating voltage of
the system to be protected. At this voltage
(VRM) the current consumption of the SiBOD
are negligible and will not effect the protected system.
-VBattery
Circuit
2
To Order: 1-877-502-5500 Fax: 1-858-715-7280
When a transient occurs, the voltage across
the SiBOD will increase until the breakdown
voltage (VBR) is reached. At this point the
device will operate in a similar way to a
TVS device and is in an avalanche mode.
The voltage of the transient will now be
limited and will only increase by a few
volts as the device diverts more current.
As this transient current rises, a level of
current through the device is reached
(IBO), causing the device to switch to a
fully conductive state such that the voltage across the device is now only a few
volts (VT). The voltage at which the device
switches from the avalanche mode to the
fully conductive state (VT) is known as the
breakover voltage (VBO). When the device
is in the VT state, high currents can be
diverted without damage to the SiBOD
due to the low voltage across the device,
since the limiting factor in such devices is
dissipated power (V X I).
Resetting of the device to the nonconducting state is controlled by the current flowing
through the device. When the current falls
below a certain value, known as the holding
current (IH), the device resets automatically.
As with the avalanche TVS device, if the
SiBOD device is subjected to a surge
current that is beyond its maximum rating,
the device will fail in short-circuit mode,
which ensures that the equipment is
ultimately protected.
Thyristors (SiBOD™ Breakover Devices)
SiBOD Series
Application Notes
Selecting a SiBOD Device
1. When selecting a device, it is important
that the VRM of the device be equal to or
greater than the operating voltage of the
system. For example, when protecting
the ringing circuit of a telephone handset,
SiBOD VRM > VDC + RINGING VOLTAGE
SiBOD VRM > VDC + V√ 2X RINGING VOLTAGE
2. The minimum holding current (IH) of the
device must be carefully selected if the
SiBOD is to reset after diverting a surge.
The minimum IH value of the SiBOD must
be greater than the current the system is
capable of delivering, otherwise the
device will remain conducting following
a transient condition.
IH> SYSTEM VOLTAGE
SOURCE IMPEDANCE
The SiBOD range can be used to protect against surges
as defined in the following International Standards
Standard
FCC Part 68
Surge A Metallic
Surge A Longitudinal
Surge B Metallic
Surge B Longitudinal
Bellcore GR 1089
1
2
3
4
5
ITU K.17
ITU K.20
ITU K.21
RLM 88, CNET
CNET 131-24
VDE 0433
VDE 0878
IEC 61000-4-5
FTZ R12
VOLTAGE
VOLTS
WAVEFORM
µSEC
CURRENT
AMPS
WAVEFORM
µSEC
SIBOD
SERIES
800
1500
1000
1500
10x560
10x160
9x720
9x720
100
200
25
37.5
10x560
10x160
5x320
5x320
B or C
C
A, B or C
A, B or C
600
1000
1000
2500
1000
1500
1000
1500
4000
1500
1000
2000
2000
Level 3
Level 4
2000
10x1000
10x360
10x1000
2x10
10x360
10x700
10x700
10x700
10x700
.5x700
.5x700
10x700
1.2x50
10x700
1.2x50
10x700
100
100
100
500
25
37.5
25/100
37.5
100
38
25
50
50
50
100
50
10x1000
10x360
10x1000
2x10
10x360
5x310
5x310
5x310
5x310
.2x310
.8x310
5x310
1x20
5x310
8x20
5x310
C
B or C
C
C
A, B or C
A, B or C
A, B or C
A, B or C
B or C
A, B or C
A, B or C
A, B or C
A, B or C
A, B or C
A, B or C
A, B or C
To Order: 1-877-502-5500 Fax: 1-858-715-7280
3
Thyristors (SiBOD™ Breakover Devices)
SiBOD Series
V-I Graph Illustrating Symbols and Terms
for the SiBOD Surge Protection Devices
IT
IH
IBO
IRM
VT
VRM VBR VBO
MIN.
tr
Percentage Peak Voltage
100
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
SYMBOL
PARAMETER
VRM
VBR
VBO/VS
VT
IRM
IBO
IH
Co
Ipp
Stand-off voltage
Breakdown voltage
Breakover voltage
On-state voltage
Stand-off current
Breakover current
Holding current
Off state Capacitance
Peak pulse current
t2
90
VRSM
50
t1
30
td = 50 µs
10
20
30
40 50 60
Time (µs)
70
tr
Percentage Peak Current
100
t2
90
1RSM
or
1SM
tr = 1.25 x (t 2 -t 1 ) = 8 µs
1RSM
50
10
td=
20 µs
t1
10
20
30
40
Time (µs)
50
ABSOLUTE RATINGS
SYMBOL
PARAMETER
T stg
Storage and operating junction
temperature range
Tj
TL
TC
4
VRSM
tr=1.67 x (t2-t1)=1.2µs
Maximum temperature for soldering
(For period of 10 seconds max.)
Maximum case temperature
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DO-214
VALUE
TO-220
T10
-40 to 150 -40 to 150 -40 to 150
UNIT
C˚
150
230
150
230
150
230
C˚
C˚
75
115
75
C˚
Thyristors (SiBOD™ Breakover Devices)
SiBOD Series
DO-214
DO-214
2.0
TAPE & REEL PACKAGING
3.30-3.81
Cover tape
Embossed carrier
5.21/5.59
4.06/4.57
JEDEC CASE
TYPE
TAPE
WIDTH
(mm)
QUANTITY PER REEL
330mm Reel
(øD) (T3)
DO-214AA
12
3000
2.18/2.44
.102
.203
0.76/1.27
0.076 max.
Seating Plane
Sprocket holes
2.1
2.74
2.16
2.26
Direction of tape feed
Solder pads
All dimensions in mm
Our surface-mount components are
placed in embossed cavities of anti-static/conductive carrier tape and sealed
with a cover tape. The taped devices are
supplied in reels in protective boxes. The
standard Crydom lead-tape packaging of
surface-mount components follow the
requirements of EIA 481-1, shown below:
• Cover Tape: This will not extend over
the edge of the carrier tape or extend
over any part of the sprocket holes.
• Carrier Tape: This will release from the
reel hub as the last portion of the tape
unwinds from the reel without damage to
the carrier tape and with the components
remaining in the cavities.
• Leader Tape: A minimum length of
300mm leader (and trailer) of tape will
be provided before the first (and after
the last) component on the reel, with a
minimum of forty empty component carrier pockets covered with tape.
Electrical Characteristics
Stock
Number
CR0300
CR0640
CR0720
CR0800
CR1100
CR1300
CR1500
CR1800
CR2300
CR2600
CR3100
CR3500
CR4000
Device Code
SA, SB, SC
SA, SB, SC
SA, SB, SC
SA, SB, SC
SA, SB, SC
SA, SB, SC
SA, SB, SC
SA, SB, SC
SA, SB, SC
SA, SB, SC
SA, SB, SC
SA, SB, SC
SA, SB, SC
030 A, B, or C
064 A, B, or C
072 A, B, or C
080 A, B, or C
110 A, B, or C
130 A, B, or C
150 A, B, or C
180 A, B, or C
230 A, B, or C
260 A, B, or C
310 A, B, or C
350 A, B, or C
400 A, B or C
Minimum
Holding
Current
(IH)
* Typical
Capacitance
@1MHz
2V Bias
Reverse
Stand-off
Voltage
(VR)
Maximum
Breakover
Voltage
(VBO) @ IBO
Maximum
Voltage
Turnon
(VT) @ 1A
Maximum
Reverse
Leakage
(IR) @ VR
Maximum
Breakover
Current
(IBO)
V
V
V
µA
mA
mA
pF
25
58
65
75
90
120
140
160
190
220
275
320
375
40
77
88
98
130
160
180
220
260
300
350
400
450
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
200.0
120.0
90.0
90.0
90.0
60.0
60.0
60.0
45.0
45.0
45.0
45.0
45.0
*Note: The typical capacitance values listed in this chart are for SA and SB. SC capacitance is approximately double that of SA and SB.
CR
Voltage
PP Maximum
A = 50A (10 x 560 µs)
B = 100A (10 x 560 µs)
C = 500A (2 x 10 µs)
S
Peak Pulse
SA
SB
SC
2/10µs
8/20µs
10/160µs
10/560µs
10/1000µs
150
100
50
-
250
150
100
-
500
400
200
100
To Order: 1-877-502-5500 Fax: 1-858-715-7280
5
Thyristors (SiBOD™ Breakover Devices)
SiBOD Series
TO-220
Electrical Characteristics (2 chip)
Part
Number
Reverse
Stand-off
Voltage
(VR)
Maximum
Breakover
Voltage
(VBO) @ IBO
pins 1-2 & 3-2
CR0602
CR1402
CR1602
CR2202
CR2702
CR3002
CR3602
CR4202
CR4802
CR6002
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
Reverse
Stand-off
Voltage
(VR)
Maximum
Breakover
Voltage
(VBO) @ IBO
Typical
Voltage
Turnon
(VT) @ 1A
Maximum
Reverse
Leakage
(IR) @ VR
Maximum
Breakover
Current
(IBO)
Minimum
Holding
Current
(IH)
* Typical
Cap.
@1MHz
2V Bias
mA
pF
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
200.0
120.0
90.0
90.0
60.0
60.0
60.0
45.0
45.0
45.0
pins 1-3
V
V
V
V
V
µA
mA
25.0
58.0
65.0
90.0
120.0
140.0
160.0
190.0
220.0
275.0
40.0
77.0
95.0
130.0
160.0
180.0
220.0
250.0
300.0
350.0
50.0
116.0
130.0
180.0
240.0
280.0
320.0
380.0
440.0
550.0
80.0
154.0
190.0
260.0
320.0
360.0
440.0
500.0
600.0
700.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
*Note: The typical capacitance values listed in this chart are for AA and AB. AC capacitance is approximately double that of AA and AB.
Electrical Characteristics (3 chip)
Part
Number
Reverse
Stand-off
Voltage
(VR)
Maximum
Breakover
Voltage
(VBO) @ IBO
pins 1-2 & 3-2
CR1553
CR1803
CR2103
CR2353
CR2703
CR3203
CR3403
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
AA, AB, AC
Reverse
Stand-off
Voltage
(VR)
Maximum
Breakover
Voltage
(VBO) @ IBO
Typical
Voltage
Turnon
(VT) @ 1A
Maximum
Reverse
Leakage
(IR) @ VR
Maximum
Breakover
Current
(IBO)
Minimum
Holding
Current
(IH)
pins 1-3
V
V
V
V
V
µA
mA
mA
pF
130.0
150.0
170.0
200.0
230.0
270.0
300.0
180.0
210.0
250.0
270.0
300.0
350.0
400.0
130.0
150.0
170.0
200.0
230.0
270.0
300.0
180.0
210.0
250.0
270.0
300.0
350.0
400.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
800.0
800.0
800.0
800.0
800.0
800.0
800.0
150.0
150.0
150.0
150.0
150.0
150.0
150.0
60.0
60.0
60.0
60.0
45.0
45.0
45.0
*Note: The typical capacitance values listed in this chart are for AA and AB. AC capacitance is approximately double that of AA and AB.
AB
AC
2/10µs
8/20µs
10/160µs
10/560µs
10/1000µs
150
100
50
-
250
150
100
-
500
400
200
100
11.3
8.2
0.8
0.46 0.61
2.54
5.08
6
4.78
11.1
A = 50A (10 x 560 µs)
B = 100A (10 x 560 µs)
C = 500A (2 x 10 µs)
4.52
A
7.9
PP Maximum
10.16 10.42
3.1 3.2
Voltage
Modified
TO-220
9.53
AA
9.14
Peak Pulse
CR
* Typical
Cap.
@1MHz
2V Bias
All dimensions in mm
To Order: 1-877-502-5500 Fax: 1-858-715-7280
Thyristors (SiBOD™ Breakover Devices)
SiBOD Series
T10A, T10B, T10C
Electrical Characteristics
T10A
DEVICE
TYPE
VRM
(V)
IRM
@ VRM
(µA)
VBR
MIN. @ 1 mA
(V)
VBO
MAX.
(V)
VT TYP
@ 1A
(V)
IBO TYP
(mA)
IH
MIN.
(mA)
T10
T10
T10
T10
T10
T10
70
100
120
170
200
240
1
1
1
1
1
1
80
110
140
180
215
270
120
135
170
210
265
360
2
2
2
4
4
4
50
50
50
50
50
50
B or E
B or E
B or E
B or E
B or E
B or E
A, B, C 080
A, B, C 110
A, B, C 140
A, B, C 180
A, B, C 220
A, B, C 270
MINIMUM HOLDING CURRENTS IH MIN.
T10C
Suffix
IH
B
E
120
180
FEATURES
• High current diverting capability,
150 A, 8 X 20 µs)
• Low capacitance, less than 100 pF
Peak Pulse
T10A
T10B
T10C
8/20µs
10/700 1-5kv
10/1000µs
150
37.5
50
250
125
100
250
125
100
T10B
Ø1.016±0.050
25.4 min.
+0.127
Ø5.080
-0.254
+0.127
9.400
-0.254
T10
25.4 min.
Package
A = DO15
B = DO-201
C = GDT outline
Voltage
All dimensions in mm
Holding current
B = 120 IH min.
E = 180 IH min.
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7
Thyristors (SiBOD™ Breakover Devices)
SiBOD™ Series
Specify Crydom
Ordering Information
About Crydom
… for these industry-leading
For recommended applications and more
Over the years Crydom has become the
components and products:
information contact:
supplier of choice for advanced, high-quality
Sales: 1-877-502-5500
products like those featured here. It's the
Technical support: 1-877-702-7700
result of our teams of design and production
Printed Circuit Board Mount
Corporate Headquarters: 1-858-715-7200
engineers – material, production control,
Panel Mount
Fax: 1-858-715-7280
and quality assurance experts, and more –
DIN Rail Mount
E-mail: [email protected]
working seamlessly together to create, pro-
Website: www.crydom.com
duce, and deliver superior components and
FASTFAX Product Info: 1-888-267-9191
products that satisfy the most demanding
• Solid State Relays
• Power Cubes
environmental and performance require• I/O Modules
ments. We focus on timely delivery and
competitive pricing aimed at meeting your
• Transient Voltage
Suppression Components
needs and helping you succeed in today's
fast-paced, fast-changing global markets.
TVS Diodes
Thyristor Suppression
Devices
Gas Discharge Tubes (GDT)
Zeners/Studs
Hybrid Arrester Devices
Crydom
9525 Chesapeake Drive
San Diego, CA 92123 USA
©1999 Crydom
Specifications subject to change without notice.
CRYDOM SiBOBSeries 1099-5000 Ver A
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