SiBOD™ Series Thyristors (SiBOD™ Breakover Devices) SiBOD™ Series Specify Crydom … for these industry-leading components and products: • Solid State Relays Get TVS Insurance From The People Who Know Crydom’s SiBOD Series Equals “Crow Bar” Protection There’s too much riding on over-voltage surge protection to take chances. That’s why more and more people are turning to Crydom. To protect sensitive telecommunications circuitry, Crydom Thyristors (SiBOD™ Breakover Devices) “crow bar” potentially dangerous transients – switching them to ground and dissipating the voltage to zero. This approach can handle more energy than TVS diode “clamping.” Printed Circuit Board Mount Panel Mount DIN Rail Mount • Power Cubes • I/O Modules • Transient Voltage Suppression Components TVS Diodes Thyristor Suppression Devices Gas Discharge Tubes (GDT) Zeners/Studs Hybrid Arrester Devices Why? To start with, we don’t just sell TVS components – we’re the only company developing, designing and manufacturing all five of the basic product families: Transient Voltage Suppression (TVS) Diodes. SiBOD™ Thyristor Suppression Devices. Gas Discharge Tubes (GDT). Hybrid Arrester Over-Voltage Surge Protectors. Zeners/Studs. And the only company employing all three voltage protection technologies – gas tube, semiconductor and hybrid. That means we're the only one who knows them inside and out. What each type can and can't do. Which type to use for different applications. How to provide as much or little technical support as you need. How to work with you to develop special devices should you require them. And even assist you in formulating design requirements and testing procedures to meet both your specifications and international standards. FEATURES • Glass passivated junction • Bi-directional transient voltage protection • Nano second clamping response • Surge capability up to 500 amps • No performance degradation under service life BENEFITS • One component cost for +ve and -ve protection • Excellent voltage protection levels • Can be used for primary or secondary protection • No replacement required ie, no maintenance cost • Highest level of quality and reliability • Low cost auto assembly MECHANICAL CHARACTERISTICS • Transfer molded, void free epoxy body • Tin/Lead plated leads • Maximum case temperature for soldering purposes: 230°C for 10 seconds To Order: 1-877-502-5500 Fax: 1-858-715-7280 Thyristors (SiBOD™ Breakover Devices) SiBOD Series Application Notes The Added Crydom Benefit Crydom Thyristors (SiBOD™ Breakover Devices) offer the highest quality and performance. They also come with an added benefit – service and technical assistance to help ensure optimum protection for your telecommunications application. PABX PROTECTION CR1300SB CR1300SB DC SUPPLY VC R IH > R Equipment to be protected VC SiBOD Series The Crydom SiBOD is a four-layer thyristorbased protector designed specifically for telecommunications applications. It has greater capacity for diverting surge currents than an avalanche TVS device. The Crydom series protector is based on the proven technology of the SiBOD product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode (TVS), and when compared to a GDT offers lower voltage clamping levels and infinite surge life. SLIC PROTECTION Line CR0640SB To SLIC CR0640SB Line or Line (-) (-) (+) To SLIC CR0640SB (-) Line COMPLETE PC BOARD OPERATION PROTECTION Line CR2300 SB Integrated SLIC On-hook Off-hook Ring relay CR0640 (-) SB (-) On-hook Line Primary Off-hook protection Ring Generator on-hook or Ring Detection (+) (-) Secondary protection off-hook Electrical Characteristics The electrical characteristics of the SiBOD devices are similar to those of a self-gated Triac, but the SiBOD are twoterminal devices with no gate. The gate function is achieved by an internal current controlled mechanism. Like the TVS diodes, the SiBOD have a stand-off voltage (VRM) that should be equal to or greater than the operating voltage of the system to be protected. At this voltage (VRM) the current consumption of the SiBOD are negligible and will not effect the protected system. -VBattery Circuit 2 To Order: 1-877-502-5500 Fax: 1-858-715-7280 When a transient occurs, the voltage across the SiBOD will increase until the breakdown voltage (VBR) is reached. At this point the device will operate in a similar way to a TVS device and is in an avalanche mode. The voltage of the transient will now be limited and will only increase by a few volts as the device diverts more current. As this transient current rises, a level of current through the device is reached (IBO), causing the device to switch to a fully conductive state such that the voltage across the device is now only a few volts (VT). The voltage at which the device switches from the avalanche mode to the fully conductive state (VT) is known as the breakover voltage (VBO). When the device is in the VT state, high currents can be diverted without damage to the SiBOD due to the low voltage across the device, since the limiting factor in such devices is dissipated power (V X I). Resetting of the device to the nonconducting state is controlled by the current flowing through the device. When the current falls below a certain value, known as the holding current (IH), the device resets automatically. As with the avalanche TVS device, if the SiBOD device is subjected to a surge current that is beyond its maximum rating, the device will fail in short-circuit mode, which ensures that the equipment is ultimately protected. Thyristors (SiBOD™ Breakover Devices) SiBOD Series Application Notes Selecting a SiBOD Device 1. When selecting a device, it is important that the VRM of the device be equal to or greater than the operating voltage of the system. For example, when protecting the ringing circuit of a telephone handset, SiBOD VRM > VDC + RINGING VOLTAGE SiBOD VRM > VDC + V√ 2X RINGING VOLTAGE 2. The minimum holding current (IH) of the device must be carefully selected if the SiBOD is to reset after diverting a surge. The minimum IH value of the SiBOD must be greater than the current the system is capable of delivering, otherwise the device will remain conducting following a transient condition. IH> SYSTEM VOLTAGE SOURCE IMPEDANCE The SiBOD range can be used to protect against surges as defined in the following International Standards Standard FCC Part 68 Surge A Metallic Surge A Longitudinal Surge B Metallic Surge B Longitudinal Bellcore GR 1089 1 2 3 4 5 ITU K.17 ITU K.20 ITU K.21 RLM 88, CNET CNET 131-24 VDE 0433 VDE 0878 IEC 61000-4-5 FTZ R12 VOLTAGE VOLTS WAVEFORM µSEC CURRENT AMPS WAVEFORM µSEC SIBOD SERIES 800 1500 1000 1500 10x560 10x160 9x720 9x720 100 200 25 37.5 10x560 10x160 5x320 5x320 B or C C A, B or C A, B or C 600 1000 1000 2500 1000 1500 1000 1500 4000 1500 1000 2000 2000 Level 3 Level 4 2000 10x1000 10x360 10x1000 2x10 10x360 10x700 10x700 10x700 10x700 .5x700 .5x700 10x700 1.2x50 10x700 1.2x50 10x700 100 100 100 500 25 37.5 25/100 37.5 100 38 25 50 50 50 100 50 10x1000 10x360 10x1000 2x10 10x360 5x310 5x310 5x310 5x310 .2x310 .8x310 5x310 1x20 5x310 8x20 5x310 C B or C C C A, B or C A, B or C A, B or C A, B or C B or C A, B or C A, B or C A, B or C A, B or C A, B or C A, B or C A, B or C To Order: 1-877-502-5500 Fax: 1-858-715-7280 3 Thyristors (SiBOD™ Breakover Devices) SiBOD Series V-I Graph Illustrating Symbols and Terms for the SiBOD Surge Protection Devices IT IH IBO IRM VT VRM VBR VBO MIN. tr Percentage Peak Voltage 100 ELECTRICAL CHARACTERISTICS (Tj = 25°C) SYMBOL PARAMETER VRM VBR VBO/VS VT IRM IBO IH Co Ipp Stand-off voltage Breakdown voltage Breakover voltage On-state voltage Stand-off current Breakover current Holding current Off state Capacitance Peak pulse current t2 90 VRSM 50 t1 30 td = 50 µs 10 20 30 40 50 60 Time (µs) 70 tr Percentage Peak Current 100 t2 90 1RSM or 1SM tr = 1.25 x (t 2 -t 1 ) = 8 µs 1RSM 50 10 td= 20 µs t1 10 20 30 40 Time (µs) 50 ABSOLUTE RATINGS SYMBOL PARAMETER T stg Storage and operating junction temperature range Tj TL TC 4 VRSM tr=1.67 x (t2-t1)=1.2µs Maximum temperature for soldering (For period of 10 seconds max.) Maximum case temperature To Order: 1-877-502-5500 Fax: 1-858-715-7280 DO-214 VALUE TO-220 T10 -40 to 150 -40 to 150 -40 to 150 UNIT C˚ 150 230 150 230 150 230 C˚ C˚ 75 115 75 C˚ Thyristors (SiBOD™ Breakover Devices) SiBOD Series DO-214 DO-214 2.0 TAPE & REEL PACKAGING 3.30-3.81 Cover tape Embossed carrier 5.21/5.59 4.06/4.57 JEDEC CASE TYPE TAPE WIDTH (mm) QUANTITY PER REEL 330mm Reel (øD) (T3) DO-214AA 12 3000 2.18/2.44 .102 .203 0.76/1.27 0.076 max. Seating Plane Sprocket holes 2.1 2.74 2.16 2.26 Direction of tape feed Solder pads All dimensions in mm Our surface-mount components are placed in embossed cavities of anti-static/conductive carrier tape and sealed with a cover tape. The taped devices are supplied in reels in protective boxes. The standard Crydom lead-tape packaging of surface-mount components follow the requirements of EIA 481-1, shown below: • Cover Tape: This will not extend over the edge of the carrier tape or extend over any part of the sprocket holes. • Carrier Tape: This will release from the reel hub as the last portion of the tape unwinds from the reel without damage to the carrier tape and with the components remaining in the cavities. • Leader Tape: A minimum length of 300mm leader (and trailer) of tape will be provided before the first (and after the last) component on the reel, with a minimum of forty empty component carrier pockets covered with tape. Electrical Characteristics Stock Number CR0300 CR0640 CR0720 CR0800 CR1100 CR1300 CR1500 CR1800 CR2300 CR2600 CR3100 CR3500 CR4000 Device Code SA, SB, SC SA, SB, SC SA, SB, SC SA, SB, SC SA, SB, SC SA, SB, SC SA, SB, SC SA, SB, SC SA, SB, SC SA, SB, SC SA, SB, SC SA, SB, SC SA, SB, SC 030 A, B, or C 064 A, B, or C 072 A, B, or C 080 A, B, or C 110 A, B, or C 130 A, B, or C 150 A, B, or C 180 A, B, or C 230 A, B, or C 260 A, B, or C 310 A, B, or C 350 A, B, or C 400 A, B or C Minimum Holding Current (IH) * Typical Capacitance @1MHz 2V Bias Reverse Stand-off Voltage (VR) Maximum Breakover Voltage (VBO) @ IBO Maximum Voltage Turnon (VT) @ 1A Maximum Reverse Leakage (IR) @ VR Maximum Breakover Current (IBO) V V V µA mA mA pF 25 58 65 75 90 120 140 160 190 220 275 320 375 40 77 88 98 130 160 180 220 260 300 350 400 450 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 200.0 120.0 90.0 90.0 90.0 60.0 60.0 60.0 45.0 45.0 45.0 45.0 45.0 *Note: The typical capacitance values listed in this chart are for SA and SB. SC capacitance is approximately double that of SA and SB. CR Voltage PP Maximum A = 50A (10 x 560 µs) B = 100A (10 x 560 µs) C = 500A (2 x 10 µs) S Peak Pulse SA SB SC 2/10µs 8/20µs 10/160µs 10/560µs 10/1000µs 150 100 50 - 250 150 100 - 500 400 200 100 To Order: 1-877-502-5500 Fax: 1-858-715-7280 5 Thyristors (SiBOD™ Breakover Devices) SiBOD Series TO-220 Electrical Characteristics (2 chip) Part Number Reverse Stand-off Voltage (VR) Maximum Breakover Voltage (VBO) @ IBO pins 1-2 & 3-2 CR0602 CR1402 CR1602 CR2202 CR2702 CR3002 CR3602 CR4202 CR4802 CR6002 AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC Reverse Stand-off Voltage (VR) Maximum Breakover Voltage (VBO) @ IBO Typical Voltage Turnon (VT) @ 1A Maximum Reverse Leakage (IR) @ VR Maximum Breakover Current (IBO) Minimum Holding Current (IH) * Typical Cap. @1MHz 2V Bias mA pF 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 200.0 120.0 90.0 90.0 60.0 60.0 60.0 45.0 45.0 45.0 pins 1-3 V V V V V µA mA 25.0 58.0 65.0 90.0 120.0 140.0 160.0 190.0 220.0 275.0 40.0 77.0 95.0 130.0 160.0 180.0 220.0 250.0 300.0 350.0 50.0 116.0 130.0 180.0 240.0 280.0 320.0 380.0 440.0 550.0 80.0 154.0 190.0 260.0 320.0 360.0 440.0 500.0 600.0 700.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 *Note: The typical capacitance values listed in this chart are for AA and AB. AC capacitance is approximately double that of AA and AB. Electrical Characteristics (3 chip) Part Number Reverse Stand-off Voltage (VR) Maximum Breakover Voltage (VBO) @ IBO pins 1-2 & 3-2 CR1553 CR1803 CR2103 CR2353 CR2703 CR3203 CR3403 AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC AA, AB, AC Reverse Stand-off Voltage (VR) Maximum Breakover Voltage (VBO) @ IBO Typical Voltage Turnon (VT) @ 1A Maximum Reverse Leakage (IR) @ VR Maximum Breakover Current (IBO) Minimum Holding Current (IH) pins 1-3 V V V V V µA mA mA pF 130.0 150.0 170.0 200.0 230.0 270.0 300.0 180.0 210.0 250.0 270.0 300.0 350.0 400.0 130.0 150.0 170.0 200.0 230.0 270.0 300.0 180.0 210.0 250.0 270.0 300.0 350.0 400.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 800.0 800.0 800.0 800.0 800.0 800.0 800.0 150.0 150.0 150.0 150.0 150.0 150.0 150.0 60.0 60.0 60.0 60.0 45.0 45.0 45.0 *Note: The typical capacitance values listed in this chart are for AA and AB. AC capacitance is approximately double that of AA and AB. AB AC 2/10µs 8/20µs 10/160µs 10/560µs 10/1000µs 150 100 50 - 250 150 100 - 500 400 200 100 11.3 8.2 0.8 0.46 0.61 2.54 5.08 6 4.78 11.1 A = 50A (10 x 560 µs) B = 100A (10 x 560 µs) C = 500A (2 x 10 µs) 4.52 A 7.9 PP Maximum 10.16 10.42 3.1 3.2 Voltage Modified TO-220 9.53 AA 9.14 Peak Pulse CR * Typical Cap. @1MHz 2V Bias All dimensions in mm To Order: 1-877-502-5500 Fax: 1-858-715-7280 Thyristors (SiBOD™ Breakover Devices) SiBOD Series T10A, T10B, T10C Electrical Characteristics T10A DEVICE TYPE VRM (V) IRM @ VRM (µA) VBR MIN. @ 1 mA (V) VBO MAX. (V) VT TYP @ 1A (V) IBO TYP (mA) IH MIN. (mA) T10 T10 T10 T10 T10 T10 70 100 120 170 200 240 1 1 1 1 1 1 80 110 140 180 215 270 120 135 170 210 265 360 2 2 2 4 4 4 50 50 50 50 50 50 B or E B or E B or E B or E B or E B or E A, B, C 080 A, B, C 110 A, B, C 140 A, B, C 180 A, B, C 220 A, B, C 270 MINIMUM HOLDING CURRENTS IH MIN. T10C Suffix IH B E 120 180 FEATURES • High current diverting capability, 150 A, 8 X 20 µs) • Low capacitance, less than 100 pF Peak Pulse T10A T10B T10C 8/20µs 10/700 1-5kv 10/1000µs 150 37.5 50 250 125 100 250 125 100 T10B Ø1.016±0.050 25.4 min. +0.127 Ø5.080 -0.254 +0.127 9.400 -0.254 T10 25.4 min. Package A = DO15 B = DO-201 C = GDT outline Voltage All dimensions in mm Holding current B = 120 IH min. E = 180 IH min. To Order: 1-877-502-5500 Fax: 1-858-715-7280 7 Thyristors (SiBOD™ Breakover Devices) SiBOD™ Series Specify Crydom Ordering Information About Crydom … for these industry-leading For recommended applications and more Over the years Crydom has become the components and products: information contact: supplier of choice for advanced, high-quality Sales: 1-877-502-5500 products like those featured here. It's the Technical support: 1-877-702-7700 result of our teams of design and production Printed Circuit Board Mount Corporate Headquarters: 1-858-715-7200 engineers – material, production control, Panel Mount Fax: 1-858-715-7280 and quality assurance experts, and more – DIN Rail Mount E-mail: [email protected] working seamlessly together to create, pro- Website: www.crydom.com duce, and deliver superior components and FASTFAX Product Info: 1-888-267-9191 products that satisfy the most demanding • Solid State Relays • Power Cubes environmental and performance require• I/O Modules ments. We focus on timely delivery and competitive pricing aimed at meeting your • Transient Voltage Suppression Components needs and helping you succeed in today's fast-paced, fast-changing global markets. TVS Diodes Thyristor Suppression Devices Gas Discharge Tubes (GDT) Zeners/Studs Hybrid Arrester Devices Crydom 9525 Chesapeake Drive San Diego, CA 92123 USA ©1999 Crydom Specifications subject to change without notice. CRYDOM SiBOBSeries 1099-5000 Ver A